Changes in Carrier Concentration and Debye Length: Experimental Evidence from van der Pauw Hall Measurements on NOxSensing of In2O3

2014 ◽  
Vol 161 (9) ◽  
pp. B176-B182 ◽  
Author(s):  
E. Prabhu ◽  
K. I. Gnanasekar ◽  
T. R. Ravindran ◽  
V. Jayaraman ◽  
T. Gnanasekaran
Keyword(s):  
Experimental Evidence ◽  
Carrier Concentration ◽  
Debye Length ◽  
Hall Measurements ◽  
Van Der Pauw

Carrier-Concentration-Dependent Magnetic Properties of the Diluted Magnetic Semiconductor SnMnte

1989 ◽  
Vol 151 ◽  
Author(s):  
H. J. M. Swagten ◽  
S. J. E. A. Eltink ◽  
W. J. M. De Jonge
Keyword(s):  
Magnetic Properties ◽  
Low Temperature ◽  
Experimental Evidence ◽  
Carrier Concentration ◽  
Diluted Magnetic Semiconductor ◽  
Critical Concentration ◽  
Magnetic Semiconductor ◽  
Magnetic Phases ◽  
Diluted Magnetic ◽  
Ferromagnetic Interactions

ABSTRACTIn this paper experimental evidence is presented for the carrier concentration dependence of the magnetic properties of Sn0.97Mn0.03Te, yielding a critical concentration above which ferromagnetic interactions are dominant. The observed behavior can be fairly well explained within a modified RKKY-model. Preliminary experiments on the low temperature magnetic phases indicate re-entrant spinglass behavior, which is qualitatively described with the spinglass model of Sherrington and Kirkpatrick.

Causes of incorrect carrier-type identification in van der Pauw–Hall measurements

2008 ◽  
Vol 93 (24) ◽  
pp. 242108 ◽  
Author(s):  
Oliver Bierwagen ◽  
Tommy Ive ◽  
Chris G. Van de Walle ◽  
James S. Speck
Keyword(s):  
Hall Measurements ◽  
Van Der Pauw

Automated Setup for Van Der Pauw Hall Measurements

2011 ◽  
Vol 60 (1) ◽  
pp. 198-205 ◽  
Author(s):  
Hector Castro ◽  
Jose Galvis ◽  
Sonia Castro
Keyword(s):  
Hall Measurements ◽  
Van Der Pauw

Investigation of Electrical Properties in Si Ion Implanted GaN Layer as A Function of Dose and Energy

2006 ◽  
Vol 955 ◽  
Author(s):  
Masataka Satoh ◽  
T Saitoh ◽  
K Nomoto ◽  
T Nakamura
Keyword(s):  
Electrical Properties ◽  
Carrier Concentration ◽  
Sheet Resistance ◽  
Gas Flow ◽  
Hall Effect Measurement ◽  
Ion Energy ◽  
Dose Ranging ◽  
Van Der Pauw ◽  
Induced Defects ◽  
Ion Implanted

ABSTRACTThe sheet resistance and sheet carrier concentration for Si ion implanted GaN have been investigated as a function of Si ion dosages and ion's energy using van der Pauw method and Hall effect measurement. Si ion implanted GaN is annealed at 1200 °C for 10 sec in N2 gas flow with 50 nm-thick SiNx cap layer to avoid dissociation of GaN. For Si ion energy of 30 keV, the sheet resistance is decreased from 103 to 56 ohm/sq. for the dose ranging from 1 × 1014 to 2 × 1015/cm2. For the Si dose larger than 2 × 1015/cm2, the sheet carrier concentration is saturated around 1 ×s 1015/cm2. Si ion implanted GaN with energy of 50, 80, and 120 keV at a dose of 2 × 1015/cm2 also reveal the sheet carrier concentration of about 1 × 1015/cm2 with the decrease of electron mobility. It is suggested that the implanted Si donors are strongly compensated by the residual implantation-induced defects.

Temperature Dependence of Inversion Layer Carrier Concentration and Hall Mobility in 4H-SiC MOSFETs

2012 ◽  
Vol 717-720 ◽  
pp. 713-716 ◽  
Author(s):  
Sarit Dhar ◽  
Ayayi Claude Ahyi ◽  
John R. Williams ◽  
Sei Hyung Ryu ◽  
Anant K. Agarwal
Keyword(s):  
Temperature Dependence ◽  
Carrier Concentration ◽  
Hall Mobility ◽  
Inversion Layer ◽  
Hall Measurements ◽  
Temperature Range ◽  
Strong Inversion ◽  
Stark Contrast ◽  
Channel Region

Hall measurements on NO annealed 4H-SiC MOS gated Hall bars are reported in the temperature range 77 K- 423 K. The results indicate higher carrier concentration and lower trapping at increased temperatures, with a clear strong inversion regime at all temperatures. In stark contrast to Si, the Hall mobility increases with temperature for 77 K-373K, above which the mobility decreases slightly. The maximum experimental mobility was found to be ~50 cm2V-1s-1which is only about 10% of the 4H-SiC bulk mobility indicating that while NO annealing drastically improves trapping, it does not improve the mobility significantly. Supporting modeling results strongly suggest the presence of a disordered SiC channel region.

scholarly journals Impact of invasive metal probes on Hall measurements in semiconductor nanostructures

Nanoscale ◽  
2020 ◽  
Vol 12 (39) ◽  
pp. 20317-20325
Author(s):  
Jan G. Gluschke ◽  
Jakob Seidl ◽  
H. Hoe Tan ◽  
Chennupati Jagadish ◽  
Philippe Caroff ◽  
...  
Keyword(s):  
Experimental Data ◽  
Carrier Concentration ◽  
Semiconductor Nanostructures ◽  
Hall Measurements ◽  
Hall Probes

Experimental data and modelling show that invasive Hall probes lead to substantial misestimates of carrier concentration and mobility in 2D-nanostructure devices.

Weak localization in monolayer and bilayer graphene

2007 ◽  
Vol 366 (1863) ◽  
pp. 245-250 ◽  
Author(s):  
D.W Horsell ◽  
F.V Tikhonenko ◽  
R.V Gorbachev ◽  
A.K Savchenko
Keyword(s):  
Elastic Scattering ◽  
Magnetic Fields ◽  
Experimental Evidence ◽  
Carrier Concentration ◽  
Weak Localization ◽  
Bilayer Graphene ◽  
Graphene Layers ◽  
Scattering Mechanisms ◽  
Two Systems

We demonstrate quantitative experimental evidence for a weak localization correction to the conductivity in monolayer and bilayer graphene systems. We show how inter- and intra-valley elastic scattering control the correction in small magnetic fields in a way which is unique to graphene. A clear difference in the forms of the correction is observed in the two systems, which shows the importance of the interplay between the elastic scattering mechanisms and how they can be distinguished. Our observation of the correction at zero-net carrier concentration in both systems is clear evidence of the inhomogeneity engendered into the graphene layers by disorder.

Ir Radiation Transient Annealing of Silicon Implanted Si Gallium Arsenide

1983 ◽  
Vol 23 ◽  
Author(s):  
A. Ezis ◽  
Y. K. Yeo ◽  
Y. S. Park
Keyword(s):  
Electrical Properties ◽  
Carrier Concentration ◽  
Low Dose ◽  
Drift Mobility ◽  
Electrical Activation ◽  
Concentration Profiles ◽  
Ir Radiation ◽  
Activation Efficiency ◽  
Device Applications ◽  
Van Der Pauw

ABSTRACTThe electrical properties of IR radiation transient annealed Si implanted semi-insulating GaAs are presented for 100 keV ion doses from 3 × 1012 to 3 × 1014 cm−2. For wafers implanted with 3 × 1012 cm−2 doses, suitable for FET channel layers, carrier concentration and drift mobility profiles were determined from C-V and transconductance measurements on fat FET structures. Optimum electrical activation and carrier concentration profiles were obtained for peak pulse temperatures of 930–950°C. Van der Pauw measurements were made on substrates implanted with Si doses ≥ 1 × 1013 cm−2 to determine sheet carrier concentration and Hall mobility. The peak pulse temperature required to give optimum activation efficiency is found to increase with dose. The results presented here demonstrate that undoped substrates are preferable to Cr-doped substrates for low dose device applications.

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