Photoplasticity in mercury cadmium telluride, Hg1-x Cdx Te with x = 0.3, has been studied as a function of light frequency and deformation temperature. We show that there is an easily measurable time delay accompanying irradiation of the crystal and the change in stress. This time delay is temperature dependent, suggesting a diffusion of charge carriers, introduced by the light, to the interior of the crystal. A simple analysis is given of the observed temperature dependence that is consistent with the experiments.
We report on investigation of p-type doped, SiC wafers grown by the Modified- Physical
Vapor Transport (M-PVT) method. SIMS measurements give Al concentrations in the range 1018 to
1020 cm-3, with weak Ti concentration but large N compensation. To measure the wafers’ resistivity,
carrier concentration and mobility, temperature-dependant Hall effect measurements have been
made in the range 100-850 K using the Van der Pauw method. The temperature dependence of the
mobility suggests higher Al concentration, and higher compensation, than estimated from SIMS.
Additional LTPL measurements show no evidence of additional impurities in the range of
investigation, but suggest that the additional compensation may come from an increased
concentration of non-radiative centers.
We have studied the effect of guanidinium incorporation in a single-crystalline MAPbI3 perovskite on ion migration using temperature-dependent electrochemical impedance spectroscopy.
Elucidation of the role of guanidinium incorporation in single-crystalline MAPbI3 perovskite on ion migration and activation energy