Causes of incorrect carrier-type identification in van der Pauw–Hall measurements

2008 ◽  
Vol 93 (24) ◽  
pp. 242108 ◽  
Author(s):  
Oliver Bierwagen ◽  
Tommy Ive ◽  
Chris G. Van de Walle ◽  
James S. Speck
Keyword(s):  
Hall Measurements ◽  
Van Der Pauw

Changes in Carrier Concentration and Debye Length: Experimental Evidence from van der Pauw Hall Measurements on NOxSensing of In2O3

2014 ◽  
Vol 161 (9) ◽  
pp. B176-B182 ◽  
Author(s):  
E. Prabhu ◽  
K. I. Gnanasekar ◽  
T. R. Ravindran ◽  
V. Jayaraman ◽  
T. Gnanasekaran
Keyword(s):  
Experimental Evidence ◽  
Carrier Concentration ◽  
Debye Length ◽  
Hall Measurements ◽  
Van Der Pauw

Automated Setup for Van Der Pauw Hall Measurements

2011 ◽  
Vol 60 (1) ◽  
pp. 198-205 ◽  
Author(s):  
Hector Castro ◽  
Jose Galvis ◽  
Sonia Castro
Keyword(s):  
Hall Measurements ◽  
Van Der Pauw

High Al-Doping of SiC Using a Modified PVT (M-PVT) Growth Set-Up

2005 ◽  
Vol 483-485 ◽  
pp. 31-34 ◽  
Author(s):  
Ralf Müller ◽  
Ulrike Künecke ◽  
Roland Weingärtner ◽  
Holger Schmitt ◽  
Patrick Desperrier ◽  
...  
Keyword(s):  
High Power ◽  
Room Temperature ◽  
Power Device ◽  
Bulk Crystals ◽  
Al Doping ◽  
Hall Measurements ◽  
Device Applications ◽  
Van Der Pauw ◽  
Set Up

Several highly aluminum doped SiC bulk crystals were grown with a modified PVT (MPVT) method. To facilitate 4H-SiC formation, growth was conducted on the C-face. The samples were investigated using Hall measurements in the Van-der-Pauw geometry. Lowest room temperature values for specific resistivities were 0.09 Ωcm for 6H-SiC and 0.2 Ωcm for 4H-SiC, which are to our knowledge the lowest values yet reported in literature. Thus, resistivity values of < 0.2 Ωcm, which are required for substrates in high power device applications, could be demonstrated for 4HSiC. Remarkably, in very highly doped samples the type of conduction could not be determined by Hall measurements.

Complete Characterization of Thermoelectric Materials by a Combined van der Pauw Approach and the Effect of Radiation Losses

2011 ◽  
Vol 1314 ◽  
Author(s):  
Johannes de Boor ◽  
Volker Schmidt
Keyword(s):  
Thermal Conductivity ◽  
Measurement Errors ◽  
Conductivity Measurement ◽  
Short Review ◽  
Complete Characterization ◽  
Radiative Heat Loss ◽  
Radiation Losses ◽  
Novel Method ◽  
Simple Estimation ◽  
Van Der Pauw

AbstractWe have recently presented a novel method for a complete thermoelectric characterization [J. de Boor, V. Schmidt. Adv. Mater. 22:4303, (2010)]. This method is based on the well-known electrical van der Pauw method and allows measurement of the electrical and thermal conductivity, the Seebeck coefficient and the thermoelectric figure of merit. After a short review of this method we will discuss the systematic measurement errors of the method. It turns out that radiative heat loss can affect the thermal conductivity measurement significantly. We will give a simple estimation for the relative error due to radiation losses and discuss error minimizing strategies.

Electrical Characterization of Low Temperature GaAs Layers, and Observation of the Extremely Large Carrier Concentrations in Undoped Material

1991 ◽  
Vol 241 ◽  
Author(s):  
Bijan Tadayon ◽  
Mohammad Fatemi ◽  
Saied Tadayon ◽  
F. Moore ◽  
Harry Dietrich
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Substrate Temperature ◽  
Molecular Beam ◽  
Electrical Characterization ◽  
Physical Characteristics ◽  
Hall Measurements ◽  
Undoped Material ◽  
Low Temperature Gaas

ABSTRACTWe present here the results of a study on the effect of substrate temperature, Ts, on the electrical and physical characteristics of low temperature (LT) molecular beam epitaxy GaAs layers. Hall measurements have been performed on the asgrown samples and on samples annealed at 610 °C and 850 °C. Si implantation into these layers has also been investigated.

scholarly journals Crossover from Landau Fermi liquid to non-Fermi liquid behavior: Indications from Hall measurements on CeCoIn5

2007 ◽  
Vol 460-462 ◽  
pp. 678-679
Author(s):  
C. Capan ◽  
S. Singh ◽  
S. Nair ◽  
M. Nicklas ◽  
H. Lee ◽  
...  
Keyword(s):  
Fermi Liquid ◽  
Hall Measurements ◽  
Liquid Behavior ◽  
Fermi Liquid Behavior

Preparation and Growth of Pb2Sr2Y0.5Ca0.5Cu3O8+δ Thin Film Superconductors

1992 ◽  
Vol 285 ◽  
Author(s):  
S.H.H. Naqvi ◽  
M. Vickers ◽  
S. Tarling ◽  
P. Barnes ◽  
I.W. Boyd
Keyword(s):  
Thin Film ◽  
Pulsed Laser ◽  
Growth Conditions ◽  
Laser Deposition ◽  
Ex Situ ◽  
Dc Resistivity ◽  
Basic Set ◽  
Zero Resistance ◽  
Van Der Pauw ◽  
First Time

ABSTRACTThe lead based superconductor Pb2Sr2Y0.5Ca0.5Cu3O8+δ is a most complex material. If any oxygen is present in the PbO-CuOδ-PbO sandwich layer (i.e. if δ>0) the superconductivity deteriorates. This is also a most difficult material to grow not only because of the large number of cation stoichiometries which have to be precisely balanced but also because of the tendency for multiple phases to form. Pulsed laser deposition (PLD) has been applied to prepare thin films of the 2213-phase on MgO (100) single crystal substrates at low temperature (300°C) in low oxidizing atmospheres. A basic set of ex-situ growth conditions has been determined which produce for the first time good quality films of this material as characterized by DC resistivity using the Van der Pauw method, as well as EDX and XRD. The layers are reasonably c-axis oriented and display a superconducting onset transition temperature of 79K and zero resistance at 65K after subsequent annealing in a nitrogen ambient.

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