Long minority carrier lifetimes in 6H SiC grown by chemical vapor deposition

1995 ◽  
Vol 66 (2) ◽  
pp. 189-191 ◽  
Author(s):  
O. Kordina ◽  
J. P. Bergman ◽  
A. Henry ◽  
E. Janzén
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Minority Carrier ◽  
Chemical Vapor ◽  
Carrier Lifetimes ◽  
Minority Carrier Lifetimes

The Role of Nitrogen-Induced Localization and Defects in InGaAsN (? 2% N): Comparison of InGaAsN Grown by Molecular Beam Epitaxy and Metal-Organic Chemical Vapor Deposition

2001 ◽  
Vol 692 ◽  
Author(s):  
Steven R Kurtz ◽  
A. A. Allermana ◽  
J. F. Klem ◽  
R. M. Sieg ◽  
C. H. Seager ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Molecular Beam Epitaxy ◽  
Vapor Deposition ◽  
Molecular Beam ◽  
Minority Carrier ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Carrier Diffusion ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

AbstractNitrogen vibrational mode spectra, Hall mobilities, and minority carrier diffusion lengths are examined for InGaAsN (≈ 1.1 eV bandgap) grown by molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition (MOCVD). Independent of growth technique, annealing promotes the formation of In-N bonding, and lateral carrier transport is limited by large scale (Ęmean free path ) material inhomogeneities. Comparing solar cell quantum efficiencies for devices grown by MBE and MOCVD, we find significant electron diffusion in the MBE material (reversed from the hole diffusion occurring in MOCVD material), and minority carrier diffusion in InGaAsN cannot be explained by a “universal”, nitrogen-related defect.

Minority Carrier Lifetime Measurement in Germanium on Silicon Heterostructures for Optoelectronic Applications

2005 ◽  
Vol 891 ◽  
Author(s):  
Josephine J. Sheng ◽  
Malcolm S. Carroll
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Inductively Coupled Plasma ◽  
Near Infrared ◽  
Minority Carrier ◽  
Surface Recombination ◽  
Chemical Vapor ◽  
Surface Recombination Velocity ◽  
Cmos Process ◽  
Inductively Coupled

ABSTRACTDemand for low cost and high density near infrared (NIR) detection has motivated the development and use of germanium on silicon (Ge/Si) heterostructures to extend the optoelectronic application of Si technology. Ge/Si structures are currently being considered for NIR p/n detectors that can be integrated with Si CMOS [1]. Various research demonstrations of integrated Ge/Si diodes with CMOS have been made including using sputtered poly-Ge to form Ge/Si photodiodes after the CMOS transistors were complete. Poly-crystalline germanium (poly-Ge) may be formed by various methods including the use of plasma enhanced chemical vapor deposition. In this work, the formation of poly-Ge/Si heterostructures by inductively coupled plasma enhanced chemical vapor deposition (ICP-CVD) is examined as an alternative method to integrate poly-Ge into a CMOS process flow. In this work, 25 nm poly-Ge on Si heterostructures are formed by either recrystallization of ICP-CVD hydrogenated amorphous germanium (α-Ge:H) or direct deposition of ICP-CVD poly-Ge. A rapid measure of the suitability for detectors of the different poly-Ge films is the minority carrier recombination lifetime, which can affect dark current, quantum efficiency and overall detector detectivity. Recombination lifetimes were measured, therefore, in α-Ge:H that was recrystallized using rapid thermal annealing between 400 – 1050 °C in nitrogen ambient. Lifetimes were measured using a non-contact inductively coupled photo-conductance setup and an effective surface recombination velocity is subsequently extracted for each Ge/Si heterostructure that describes the integrated recombination in the Ge layer and at the Ge/Si interface, which separates the Ge contribution from recombination in the bulk silicon and at the silicon surface. The effective recombination velocities for the 25 nm Ge layers are found to be ∼103−104 cm/s.

Sign in / Sign up

Export Citation Format

Share Document