Optical Absorption and Quantum Confinement in Porous Silicon Nanostructures Studied by Chemical Dissolution in HF Solutions and Photoconduction

2016 ◽  
Vol 6 (1) ◽  
pp. R1-R6 ◽  
Author(s):  
B. Gelloz ◽  
K. Ichimura ◽  
H. Fuwa ◽  
E. Kondoh ◽  
L. Jin
Keyword(s):  
Porous Silicon ◽  
Optical Absorption ◽  
Quantum Confinement ◽  
Silicon Nanostructures ◽  
Chemical Dissolution

Quantum confinement effects in the soft X-ray fluorescence spectra of porous silicon nanostructures

1996 ◽  
Vol 97 (7) ◽  
pp. 549-552 ◽  
Author(s):  
S Eisebitt ◽  
J Lüning ◽  
J.-E Rubensson ◽  
T van Buuren ◽  
S.N Patitsas ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Quantum Confinement ◽  
Fluorescence Spectra ◽  
Silicon Nanostructures ◽  
Confinement Effects ◽  
X Ray ◽  
Quantum Confinement Effects

scholarly journals Temperature dependent photoluminescence from porous silicon nanostructures: Quantum confinement and oxide related transitions

2011 ◽  
Vol 110 (9) ◽  
pp. 094309 ◽  
Author(s):  
Mallar Ray ◽  
Nil Ratan Bandyopadhyay ◽  
Ujjwal Ghanta ◽  
Robert F. Klie ◽  
Ashit Kumar Pramanick ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Quantum Confinement ◽  
Silicon Nanostructures ◽  
Temperature Dependent ◽  
Temperature Dependent Photoluminescence

Morphological changes in porous silicon nanostructures: non-conventional photoluminescence shifts and correlation with optical absorption

2000 ◽  
Vol 90 (3-4) ◽  
pp. 101-109 ◽  
Author(s):  
B Bessaı̈s ◽  
O Ben Younes ◽  
H Ezzaouia ◽  
N Mliki ◽  
M.F Boujmil ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Optical Absorption ◽  
Morphological Changes ◽  
Silicon Nanostructures

Noise mediated regularity of porous silicon nanostructures

2009 ◽  
Vol 94 (13) ◽  
pp. 133103 ◽  
Author(s):  
J. Escorcia-Garcia ◽  
V. Agarwal ◽  
P. Parmananda
Keyword(s):  
Porous Silicon ◽  
Silicon Nanostructures

Microwave Effects on Chemical Functionalization of Hydrogen-Terminated Porous Silicon Nanostructures

2008 ◽  
Vol 112 (42) ◽  
pp. 16622-16628 ◽  
Author(s):  
Alain Petit ◽  
Michel Delmotte ◽  
André Loupy ◽  
Jean-Noël Chazalviel ◽  
François Ozanam ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Silicon Nanostructures ◽  
Chemical Functionalization ◽  
Microwave Effects

Quantum Confinement Effects on the Dielectric Constant of Porous Silicon

1992 ◽  
Vol 283 ◽  
Author(s):  
R. Tsu ◽  
L. Ioriatti ◽  
J. F. Harvey ◽  
H. Shen ◽  
R. A. Lux
Keyword(s):  
Dielectric Constant ◽  
Porous Silicon ◽  
Size Effects ◽  
Quantum Confinement ◽  
Electrochemical Etching ◽  
Index Of Refraction ◽  
Quantum Size Effects ◽  
Quantum Size ◽  
Quantum Confinement Effects ◽  
Shallow Impurities

ABSTRACTThe reduction of the dielectric constant due to quantum confinement is studied both experimentally and theoretically. Angle resolved ellipsometry measurements with Ar- and He-Ne-lasers give values for the index of refraction far below what can be accounted for from porosity alone. A modified Penn model to include quantum size effects has been used to calculate the reduction in the static dielectric constant (ε) with extreme confinement. Since the binding energy of shallow impurities depends inversely on ε2, the drastic decrease in the carrier concentration as a result of the decrease in ε leads to a self-limiting process for the electrochemical etching of porous silicon.

scholarly journals Depth-Resolved Microspectroscopy of Porous Silicon Multilayers

1999 ◽  
Vol 588 ◽  
Author(s):  
S. Manotas ◽  
F. Agulló-Rueda ◽  
J. D. Moreno ◽  
R. J. Martín-Palma ◽  
R. Guerrero-Lemus ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Quantum Confinement ◽  
Silicon Nanocrystals ◽  
Phonon Frequency ◽  
Lattice Mismatch ◽  
High Porosity ◽  
Phonon Confinement ◽  
Heating Effects ◽  
Average Size ◽  
Good Agreement

AbstractWe have measured micro-photoluminescence (PL) and micro-Raman spectra on the cross section of porous silicon multilayers to sample different layer depths. We find noticeable differences in the spectra of layers with different porosity, as expected from the quantum confinement of electrons and phonons in silicon nanocrystals with different average sizes. The PL emission band gets stronger, blue shifts, and narrows at the high porosity layers. The average size can be estimated from the shift. The Raman phonon band at 520 cm−1 weakens and broadens asymmetrically towards the low energy side. The line shape can be related quantitatively with the average size by the phonon confinement model. To get a good agreement with the model we add a band at around 480 cm−1, which has been attributed to amorphous silicon. We also have to leave as free parameters the bulk silicon phonon frequency and its line width, which depend on temperature and stress. We reduced laser power to eliminate heating effects. Then we use the change of frequency with depth to monitor the stress. At the interface with the substrate we find a compressive stress in excess of 10 kbar, which agrees with the reported lattice mismatch. Finally, average sizes are larger than those estimated from PL.

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