scholarly journals Modeling Macro-Sized, High Aspect Ratio Through-Hole Filling by Multi-Component Additive-Assisted Copper Electrodeposition

2013 ◽  
Vol 160 (12) ◽  
pp. D3093-D3102 ◽  
Author(s):  
A. S. Childers ◽  
M. T. Johnson ◽  
J. Ramírez-Rico ◽  
K. T. Faber
Keyword(s):  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Copper Electrodeposition ◽  
Hole Filling ◽  
Through Hole

Pulse Reverse Copper Electrodeposition in High Aspect Ratio Trenches and Vias

1998 ◽  
Vol 145 (9) ◽  
pp. 3070-3074 ◽  
Author(s):  
Alan C. West ◽  
Chin‐Chang Cheng ◽  
Brett C. Baker
Keyword(s):  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Copper Electrodeposition ◽  
Pulse Reverse

High Aspect Ratio Hole Filling with CVD Tungsten for Multi-level Interconnection

1986 ◽  
Author(s):  
K. Suguro ◽  
Y. Nakasaki ◽  
S. Shima ◽  
T. Yoshii ◽  
T. Moriya ◽  
...  
Keyword(s):  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Hole Filling ◽  
Multi Level

Copper Electrodeposition of High-Aspect-Ratio Vias for Three Dimensional Packaging

2003 ◽  
Author(s):  
Kazuo Kondo ◽  
Toshihiro Yonezawa ◽  
Manabu Tomisaka ◽  
Hitoshi Yonemura ◽  
Masataka Hoshino ◽  
...  
Keyword(s):  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Three Dimensional ◽  
Copper Electrodeposition

Selective Aluminum CVD for Sub-Micron VIA Plug Filling

1992 ◽  
Vol 260 ◽  
Author(s):  
N. Zhu ◽  
S. K. Jo ◽  
M. B. Freiler ◽  
R. Scarmozzino ◽  
R. M. Osgood ◽  
...  
Keyword(s):  
Aspect Ratio ◽  
Integrated Circuits ◽  
High Aspect Ratio ◽  
Physical Vapor Deposition ◽  
Small Diameter ◽  
Chain Structure ◽  
Small Dimension ◽  
Process Window ◽  
Hole Filling ◽  
Custom Made

ABSTRACTWe present a novel technique to metallize high-aspect-ratio, small-dimension contact holes and via plugs for application to integrated circuits and packaging. The technique uses a laser-assisted process to deposit a thin film of aluminum from DMA1H, which forms a seed layer for subsequent selective CVD. The resistivity of the deposited aluminum is nearly that of the bulk metal, the contact resistivity is good (∼0.03 μΩ-cm2), and the morphology of the deposited film is comparable to that obtained with physical vapor deposition. This process has been used to fill via holes in a SiO2 substrate, and small-diameter (0.7 μm), high-aspect-ratio (3:1), aluminum plugs have been repeatedly formed without the incorporation of voids. A custom-made via chain structure was used to determine the via resistance (plug and contact), which was found to be 0.1 -0.3 Ω. Our technique opens a new process window for void-free high-aspect-ratio via and contact hole filling, and is particularly interesting in that it offers the potential to use aluminum or aluminum-copper in plug metallization.

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