The Effect of Hydrogen Doping on the Electrochemical Etching of Ion-Irradiated n-Type Silicon

2018 ◽  
Vol 7 (8) ◽  
pp. N110-N113 ◽  
Author(s):  
H. D. Liang ◽  
M. B. H. Breese ◽  
S. Duttagupta ◽  
A. G. Aberle ◽  
A. A. Bettiol ◽  
...  
Keyword(s):  
Electrochemical Etching ◽  
Type Silicon ◽  
Hydrogen Doping

Utilization of Low Wavelength Laser Linking with Electrochemical Etching to Produce Nano-Scale Porous Layer on p-Type Silicon Wafer with High Luminous Flux

2021 ◽  
Vol 10 (1) ◽  
pp. 016003
Author(s):  
Philip Nathaniel Immanuel ◽  
Chao-Ching Chiang ◽  
Tien-Hsi Lee ◽  
Sikkanthar Diwan Midyeen ◽  
Song-Jeng Huang
Keyword(s):  
Silicon Wafer ◽  
Porous Layer ◽  
Electrochemical Etching ◽  
Luminous Flux ◽  
Nano Scale ◽  
Type Silicon ◽  
P Type

Electrochemical Etching for n-type Silicon using a Novel Etchant

2001 ◽  
pp. 632-635 ◽  
Author(s):  
Shinichi Izuo ◽  
Hiroshi Ohji ◽  
Patrick. J. French ◽  
Kazuhiko Tsutsumi
Keyword(s):  
Electrochemical Etching ◽  
Type Silicon

Visible Electroluminescence from Al-Porous Silicon Reverse Bias Diodes Formed on the Base of Degenerate N-Type Silicon

1994 ◽  
Vol 358 ◽  
Author(s):  
S. Lazarouk ◽  
V. Bondarenko ◽  
P. Pershukevich ◽  
S. La Monica ◽  
G. Maiello ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Reverse Bias ◽  
Light Emission ◽  
Electrochemical Etching ◽  
Forward Bias ◽  
Applied Bias ◽  
Light Emitting ◽  
Type Silicon ◽  
Silicon Devices ◽  
Preparation Conditions

ABSTRACTWe demonstrate current induced visible light emission from Schottky junctions between aluminium electrodes and porous silicon formed by electrochemical etching of degenerate n+ -type silicon. HF concentration and anodizing current were chosen to yield preparation conditions in the transition region between electropolishing and porous silicon formation regimes. The light emitting diodes were formed by magnetron sputtering of aluminum on the porous silicon surface. Visible electroluminescence (EL) was recorded when dc or ac voltages larger than 4 V were applied between the aluminium electrodes. The visible EL appears in the dark, at the edge of the electrodes at a reverse bias of 5-6 V. The intensity of emitted light increases with applied voltage; at applied bias higher than 7 V the light emitted was observable by the naked eye at normal daylight. Compared to forward bias solid state contact porous silicon devices, the structure has an increased stability (after 100 hours of continuous operation under a 7 V reverse bias, no appreciable modification was observed in emission intensity). The main features of this electroluminescence are very similar to the ones observed under avalanche breakdown of silicon p-n junctions.

Study of macroporous silicon electrochemical etching in 3D structured N type silicon substrates

2010 ◽  
Vol 8 (6) ◽  
pp. 1787-1791 ◽  
Author(s):  
Sebastien Kouassi ◽  
Gael Gautier ◽  
Sebastien Desplobain ◽  
Laurent Ventura
Keyword(s):  
Electrochemical Etching ◽  
Silicon Substrates ◽  
Macroporous Silicon ◽  
Type Silicon

Disordered wall arrays by photo-assisted electrochemical etching in n-type silicon

2016 ◽  
Vol 37 (10) ◽  
pp. 106001 ◽  
Author(s):  
Yaohu Lei ◽  
Zhigang Zhao ◽  
Jinchuan Guo ◽  
Ji Li ◽  
Hanben Niu
Keyword(s):  
Electrochemical Etching ◽  
Type Silicon

Fabrication of wall array by electrochemical etching of n-type silicon

2007 ◽  
Author(s):  
Zhigang Zhao ◽  
Caili Bai ◽  
Jinchuan Guo ◽  
Hanben Niu
Keyword(s):  
Electrochemical Etching ◽  
Type Silicon

Electrochemical Etching of n-Type Silicon in Fluoride Solutions

2000 ◽  
Vol 147 (8) ◽  
pp. 2999 ◽  
Author(s):  
Peter M. Hoffmann ◽  
Inge E. Vermeir ◽  
Peter C. Searson
Keyword(s):  
Electrochemical Etching ◽  
Type Silicon

A novel electrochemical etching technique for n-type silicon

2002 ◽  
Vol 97-98 ◽  
pp. 720-724 ◽  
Author(s):  
Shinichi Izuo ◽  
Hiroshi Ohji ◽  
Patrick J. French ◽  
Kazuhiko Tsutsumi
Keyword(s):  
Electrochemical Etching ◽  
Etching Technique ◽  
Type Silicon
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