Study of macroporous silicon electrochemical etching in 3D structured N type silicon substrates

2010 ◽  
Vol 8 (6) ◽  
pp. 1787-1791 ◽  
Author(s):  
Sebastien Kouassi ◽  
Gael Gautier ◽  
Sebastien Desplobain ◽  
Laurent Ventura
2002 ◽  
Vol 722 ◽  
Author(s):  
Paolo Bettotti ◽  
Zeno Gaburro ◽  
Luca Dal Negro ◽  
Lorenzo Pavesi

AbstractWe discuss fabrication of macroporous structures, both random and periodical, on p-type silicon samples by electrochemical etching using aqueous and organic electrolytes. We have obtained different lattice structures starting from an unique lithographic mask. Organic compounds used in this work were Dimethylformamide (DMF) and Dimethylsulfoxide (DMSO).


2012 ◽  
Vol 488-489 ◽  
pp. 1343-1347
Author(s):  
Wei Ying Ou ◽  
Lei Zhao ◽  
Zhao Chen Li ◽  
Hong Wei Diao ◽  
Wen Jing Wang

Low cost electrochemical etching method was utilized to prepare macroporous silicon on p-type silicon substrate in dilute HF solution. By optimizing the substrate resistivity, the etching current density, and the etching time, excellent macroporous silicon was obtained on 15 Ω•cm p-type silicon substrate with the pore diameter of about 2 μm, the pore depth of about 30 μm, and the surface pore density up to ~107/cm2. Such macroporous silicon gave out an excellent antireflective performance with the reflectance lower than 4% in a wide spectral range of 400-1000 nm. The low reflectance combined with the deep pore morphology provides an attractive potential to fabricate radial p-n junction solar cells on such macroporous silicon.


2021 ◽  
Vol 10 (1) ◽  
pp. 016003
Author(s):  
Philip Nathaniel Immanuel ◽  
Chao-Ching Chiang ◽  
Tien-Hsi Lee ◽  
Sikkanthar Diwan Midyeen ◽  
Song-Jeng Huang

2005 ◽  
Vol 51 (4) ◽  
pp. 665-676 ◽  
Author(s):  
M. Chemla ◽  
J.F. Dufrêche ◽  
I. Darolles ◽  
F. Rouelle ◽  
D. Devilliers ◽  
...  

2001 ◽  
pp. 632-635 ◽  
Author(s):  
Shinichi Izuo ◽  
Hiroshi Ohji ◽  
Patrick. J. French ◽  
Kazuhiko Tsutsumi

2018 ◽  
Vol 7 (8) ◽  
pp. N110-N113 ◽  
Author(s):  
H. D. Liang ◽  
M. B. H. Breese ◽  
S. Duttagupta ◽  
A. G. Aberle ◽  
A. A. Bettiol ◽  
...  

Author(s):  
Jianhua Zhao ◽  
Aihua Wang ◽  
P.P. Altermatt ◽  
M.A. Green ◽  
J.P. Rakotoniaina ◽  
...  

Coatings ◽  
2017 ◽  
Vol 7 (2) ◽  
pp. 33 ◽  
Author(s):  
Kenedy Freitas ◽  
José Toledo ◽  
Leandro Figueiredo ◽  
Paulo Morais ◽  
Jorlandio Felix ◽  
...  

2010 ◽  
Vol 31 (11) ◽  
pp. 116002 ◽  
Author(s):  
Guozheng Wang ◽  
Shencheng Fu ◽  
Li Chen ◽  
Ji Wang ◽  
Xulei Qin ◽  
...  

Author(s):  
Alexander S. Lenshin ◽  
Anatoly N. Lukin ◽  
Yaroslav A. Peshkov ◽  
Sergey V. Kannykin ◽  
Boris L. Agapov ◽  
...  

The aim of this work was the formation of multilayer structures of macroporous silicon and the study of their structural, morphological, and optical properties in comparison with the properties of multilayer structures of mesoporous silicon. The paper presents the results of the development of techniques for the formation of multilayer structures of porous silicon por-Si by stepwise change in the current with two-stage modes of electrochemical etching.The data on the morphology, composition, and porosity of macroporous and mesoporous silicon samples were obtained using scanning electron microscopy, IR spectroscopy, and X-ray reflectivity. It was shown that with the two-stage growth of porous silicon layers, the depth of the boundary between the layers of the structure was determined by the primary mode of electrochemical etching, while the total layer thickness increased with an increase in the current density of electrochemical etching.A comparative analysis of the relative intensity and fine structure of vibrational modes of IR spectra indicated a significantly more developed specific pore surface and greater sorption capacity of mesoporous silicon as compared to macroporous silicon.     REFERENCES 1. Pacholski C. Photonic crystal sensors based on porous silicon. Sensors. 2013;13(4): 4694–4713. https://doi.org/10.3390/s130404694 2. Harraz F. A. Porous silicon chemical sensors and biosensors: A review. Sensors and Actuators B: Chemical. 2014;202: 897–912. https://doi.org/10.1016/j.snb.2014.06.0483. Qian M., Bao X. Q., Wang L. W., Lu X., Shao J., Chen X. S. Structural tailoring of multilayer porous silicon for photonic crystal application. Journal of Crystal Growth. 2006;292(2): 347–350. https://doi.org/10.1016/j.jcrysgro.2006.04.0334. Len’shin A. S., Kashkarov V. M., Turishchev S. Yu., Smirnov M. S., Domashevskaya E. P. Effect of natural aging on photoluminescence of porous silicon. Technical Physics Letters. 2011;37(9): 789–792. https://doi.org/10.1134/S10637850110901245. Kheifets L. I., Neimark A. B. Multiphase processes in porous media. Moscow: Khimiya Publ.; 1982. 320 p. (In Russ.)6. Canham L. Handbook of porous silicon. Switzerland: Springer International Publishing; 2014. 733 p.7. Zimin S. P. Porous silicon – material with new properties. Soros Educational Journal. 2004;8(1): 101–107. Available at: http://window.edu.ru/resource/217/21217/files/0401_101.pdf (In Russ., abstract in Eng.) 8. Seredin P. V., Lenshin A. S., Goloshchapov D. L., Lukin A. N., Arsentyev I. N., Bondarev A. D., Tarasov I. S. Investigations of nanodimensional Al2O3films deposited by ion-plasma sputtering onto porous silicon. Semiconductors. 2015;49(7): 915–920. https://doi.org/10.1134/S10637826150702109. Seredin P. V., Lenshin A. S., Mizerov A. M., Leiste H., Rinke M. Structural, optical and morphological properties of hybrid heterostructures on the basis of GaN grown on compliant substrate por-Si(111). Applied Surface Science. 2019;476: 1049–1060. https://doi.org/10.1016/j.apsusc.2019.01.23910. Seredin P. V., Leiste H., Lenshin A. S., Mizerov A. M. Effect of the transition porous silicon layer on the properties of hybrid GaN/SiC/por-Si/Si(111) heterostructures. Applied Surface Science. 2020;508(145267): 1–14. https://doi.org/10.1016/j.apsusc.2020.14526711. Lenshin A. S., Barkov K. A., Skopintseva N. G., Agapov B. L., Domashevskaya E. P. Influence of electrochemical etching modes under one stage and two Stage formation of porous silicon on the degree of oxidation of its surface layer under natural conditions. Kondensirovannye sredy i mezhfaznye granitsy = Condensed Matter and Interphases. 2019;21(4): 534–543. https://doi.org/10.17308/kcmf.2019.21/2364 (In Russ., abstract in Eng.) 12. Buttard D., Dolino G., Bellet D., Baumbach T., Rieutord F. X-ray reflectivity investigation of thin p-type porous silicon layers. Solid State Communications. 1998;109(1): 1–5. https://doi.org/10.1016/S0038-1098(98)00531-613. Lenshin A. S., Seredin P. V., Agapov B. L., Minakov D. A., Kashkarov V. M. Preparation and degradation of the optical properties of nano-, meso‑,and macroporous silicon. Materials Science in Semiconductor Processing. 2015;30: 25–30. https://doi.org/10.1016/j.mssp.2014.09.04014. Ksenofontova O. I., Vasin A. V., Egorov V. V., Bobyl’ A. V., Soldatenkov F. Yu., Terukov E. I., Ulin V. P., Ulin N. V., Kiselev O. I. Porous silicon and its applications in biology and medicine. Technical Physics. 2014;59(1): 66–77. https://doi.org/10.1134/S1063784214010083


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