Improved Low-Frequency Noise and Microwave Performance of Enhancement-Mode InGaP/InGaAs PHEMT with a Liquid-Phase Oxidized GaAs without a Gate Recess

2012 ◽  
Vol 2 (2) ◽  
pp. Q9-Q11 ◽  
Author(s):  
K.-W. Lee ◽  
W.-S. Chen
Keyword(s):  
Liquid Phase ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Enhancement Mode ◽  
Gate Recess

Low-Frequency Noise Characterization in AlGaN/GaN HEMTs with Varying Gate Recess Depths

2004 ◽  
Vol 831 ◽  
Author(s):  
Shrawan. K. Jha ◽  
Bun. H. Leung ◽  
Charles C. Surya ◽  
Heins Schweizer ◽  
Manfred. H. Pilkhuhn
Keyword(s):  
Low Frequency ◽  
Dry Etching ◽  
Frequency Noise ◽  
Noise Power ◽  
Hot Electron ◽  
Low Frequency Noise ◽  
Noise Power Spectral Density ◽  
Noise Measurements ◽  
Gan Hemts ◽  
Gate Recess

ABSTRACTLow-frequency noise measurements were performed on a number of AlGaN/GaN HEMTs with different gate recess depths, which were formed by dry etching. Detailed characterizations of the low-frequency noise properties were performed on the devices as a function of as a function of hot-electron stressing conducted at VD = 10 V and VG = -1.5 V. The room temperature voltage noise power spectral density, SV(ƒ), of the devices were found to show 1/ƒ dependence. A comparison of SV(ƒ) measured from different devices clearly indicate increase in the noise levels for the devices with large recess depths, reflecting the degradation caused by ion-impact induced damage during recess formation. Furthermore, the results of low-frequency noise measurements showed fast degradations for the devices with larger gate recess depths. Our experimental data clearly show that the dry etching process has induced damages in gates.

LOW FREQUENCY NOISE AND INTERFACE DENSITY OF TRAPS IN InGaAs MOSFETs WITH GdScO3 HIGH-K DIELECTRIC

2011 ◽  
Vol 20 (01) ◽  
pp. 105-113
Author(s):  
S. RUMYANTSEV ◽  
W. STILLMAN ◽  
M. SHUR ◽  
T. HEEG ◽  
D.G. SCHLOM ◽  
...  
Keyword(s):  
Gate Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Low Frequency ◽  
Trap Density ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Enhancement Mode ◽  
High K ◽  
High K Dielectric

Insulated gate n-channel enhancement mode InGaAs field effect transistors with the GdScO 3 high-k dielectric have been fabricated and studied. The low frequency noise was high indicating a high interface density of traps. Trap density and its dependence on the gate voltage have been extracted from the noise and conductance measurements.

Liquid-phase exfoliated graphene self-assembled films: Low-frequency noise and thermal-electric characterization

2016 ◽  
Vol 380 ◽  
pp. 268-273 ◽  
Author(s):  
G. Tubon Usca ◽  
J. Hernandez-Ambato ◽  
C. Pace ◽  
L.S. Caputi ◽  
A. Tavolaro
Keyword(s):  
Liquid Phase ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Exfoliated Graphene ◽  
Self Assembled

Estimating the Quality of Thermionic Cathodes for Microwave Vacuum Tubes Using the Low-Frequency Noise Parameters

Vestnik MEI ◽  
2018 ◽  
Vol 5 (5) ◽  
pp. 120-127
Author(s):  
Mikhail D. Vorobyev ◽  
◽  
Dmitriy N. Yudaev ◽  
Andrey Yu. Zorin ◽  
◽  
...  
Keyword(s):  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Noise Parameters ◽  
Thermionic Cathodes ◽  
Vacuum Tubes

Simulation of Low Frequency Noise in a CCTWT

1999 ◽  
Author(s):  
Charles K. Birdsall ◽  
J. P. Varboncoeur ◽  
P. J. Christensen
Keyword(s):  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise
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