Low-Frequency-Noise Characteristic of Quasi-Enhancement-Mode HEMT Using a Selectively Hydrogen-Pretreatment

Author(s):  
I.H. Kang ◽  
S.C. Kim ◽  
W. Bahng ◽  
N.K. Kim
2011 ◽  
Vol 20 (01) ◽  
pp. 105-113
Author(s):  
S. RUMYANTSEV ◽  
W. STILLMAN ◽  
M. SHUR ◽  
T. HEEG ◽  
D.G. SCHLOM ◽  
...  

Insulated gate n-channel enhancement mode InGaAs field effect transistors with the GdScO 3 high-k dielectric have been fabricated and studied. The low frequency noise was high indicating a high interface density of traps. Trap density and its dependence on the gate voltage have been extracted from the noise and conductance measurements.


2005 ◽  
Vol 41 (17) ◽  
pp. 981
Author(s):  
I.H. Kang ◽  
S.C. Kim ◽  
W. Bahng ◽  
N.K. Kim ◽  
J.-I. Song

Vestnik MEI ◽  
2018 ◽  
Vol 5 (5) ◽  
pp. 120-127
Author(s):  
Mikhail D. Vorobyev ◽  
◽  
Dmitriy N. Yudaev ◽  
Andrey Yu. Zorin ◽  
◽  
...  

1999 ◽  
Author(s):  
Charles K. Birdsall ◽  
J. P. Varboncoeur ◽  
P. J. Christensen

2021 ◽  
Vol 182 ◽  
pp. 108203
Author(s):  
Lígia T. Silva ◽  
Alda Magalhães ◽  
José Ferreira Silva ◽  
Fernando Fonseca

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