Investigation on Evolution of Oxygen Precipitates in Bonded SOI Substrate

2019 ◽  
Vol 8 (3) ◽  
pp. P186-P189
Author(s):  
Xin Su ◽  
Nan Gao ◽  
Meng Chen ◽  
Hongtao Xu ◽  
Xing Wei ◽  
...  
Keyword(s):  
Oxygen Precipitates ◽  
Evolution Of Oxygen

Evolution of Oxygen Associated Defects in Cz Silicon during Thermal Annealing Treatments: Comparison between Experiment and Simulation

2011 ◽  
Vol 178-179 ◽  
pp. 188-191
Author(s):  
Julien Nicolai ◽  
Nelly Burle ◽  
Bernard Pichaud
Keyword(s):  
Experimental Data ◽  
Nucleation And Growth ◽  
Growth Stages ◽  
Interstitial Oxygen ◽  
High Temperature Annealing ◽  
Annealing Effects ◽  
Annealing Cycle ◽  
Oxygen Precipitates ◽  
Induced Defects ◽  
Evolution Of Oxygen

High temperature annealing effects on Oxygen-induced defects formation has been studied by IR-LST, FTIR and TEM techniques. The results show that most defects are amorphous oxygen precipitates and/or dislocations. Ham’s theory has been modified in order to take into account the variations of interstitial oxygen concentration during the formation of precipitates. Comparison between experimental data and simulation shows that the specificity of annealing cycle is to combine both nucleation and growth stages. The morphology and stoechiometry of SiOx precipitates are also studied.

Microstructural evolution of oxygen incorporated CdTe thin films deposited by close-spaced sublimation

2021 ◽  
pp. 130552
Author(s):  
M.N. Harif ◽  
K.S. Rahman ◽  
C. Doroody ◽  
H.N. Rosly ◽  
M. Isah ◽  
...  
Keyword(s):  
Thin Films ◽  
Microstructural Evolution ◽  
Cdte Thin Films ◽  
Evolution Of Oxygen

Oxygen Precipitation in Conventional and Nitrogen Co-Doped Heavily Arsenic-Doped Czochralski Silicon Crystals: Oswald Ripening

2009 ◽  
Vol 156-158 ◽  
pp. 275-278
Author(s):  
Xiang Yang Ma ◽  
Yan Feng ◽  
Yu Heng Zeng ◽  
De Ren Yang
Keyword(s):  
High Temperature ◽  
Low Temperature ◽  
Czochralski Silicon ◽  
Silicon Crystals ◽  
Oxygen Precipitation ◽  
High Temperature Anneal ◽  
Oxygen Precipitates ◽  
Co Doped ◽  
Oswald Ripening

Oxygen precipitation (OP) behaviors in conventional and nitrogen co-doped heavily arsenic-doped Czocharalski silicon crystals subjected to low-high two-step anneals of 650 oC/8 h + 1000 oC/4-256 h have been comparatively investigated. Due to the nitrogen enhanced nucleation of OP during the low temperature anneal, much higher density of oxygen precipitates generated in the nitrogen co-doped specimens. With the extension of high temperature anneal, Oswald ripening of OP in the nitrogen co-doped specimens preceded that in the conventional ones. Moreover, due to the Oswald ripening effect, the oxygen precipitates in the conventional specimens became larger with a wider range of sizes. While, the sizes of oxygen precipitates in the nitrogen co-doped specimens distributed in a much narrower range with respect to the conventional ones.

The anodic evolution of oxygen and chlorine on foreign metal-doped SnO2 film electrodes

1981 ◽  
Vol 26 (4) ◽  
pp. 579-584 ◽  
Author(s):  
Chiaki Iwakura ◽  
Meguru Inai ◽  
Tsuyoshi Uemura ◽  
Hideo Tamura
Keyword(s):  
Sno2 Film ◽  
Metal Doped ◽  
Evolution Of Oxygen

Oxygen precipitates and the formation of thermal donors in silicon

1998 ◽  
Vol 32 (6) ◽  
pp. 640-641
Author(s):  
N. V. Vabishchevich ◽  
D. I. Brinkevich ◽  
V. S. Prosolovich
Keyword(s):  
Oxygen Precipitates
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