Amorphous Indium Titanium Zinc Oxide Thin Film Transistor and Impact of Gate Dielectrics on Its Photo-Electrical Properties

2018 ◽  
Vol 7 (7) ◽  
pp. Q3049-Q3053 ◽  
Author(s):  
Ming-Hung Hsu ◽  
Sheng-Po Chang ◽  
Shoou-Jinn Chang ◽  
Wei-Ting Wu ◽  
Jyun-Yi Li
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Electrical Properties ◽  
Gate Dielectrics ◽  
Thin Film Transistor ◽  
Oxide Thin Film ◽  
Zinc Oxide Thin Film ◽  
Titanium Zinc

Influence of the channel layer thickness on electrical properties of indium zinc oxide thin-film transistor

2010 ◽  
Vol 87 (10) ◽  
pp. 2019-2023 ◽  
Author(s):  
Ai Hua Chen ◽  
Hong Tao Cao ◽  
Hai Zhong Zhang ◽  
Ling Yan Liang ◽  
Zhi Min Liu ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Electrical Properties ◽  
Layer Thickness ◽  
Thin Film Transistor ◽  
Oxide Thin Film ◽  
Zinc Oxide Thin Film ◽  
Channel Layer ◽  
Indium Zinc Oxide

scholarly journals Effect of top gate potential on bias-stress for dual gate amorphous indium-gallium-zinc-oxide thin film transistor

AIP Advances ◽  
2016 ◽  
Vol 6 (7) ◽  
pp. 075217 ◽  
Author(s):  
Minkyu Chun ◽  
Jae Gwang Um ◽  
Min Sang Park ◽  
Md Delwar Hossain Chowdhury ◽  
Jin Jang
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistor ◽  
Oxide Thin Film ◽  
Indium Gallium Zinc Oxide ◽  
Zinc Oxide Thin Film ◽  
Bias Stress ◽  
Dual Gate ◽  
Gate Potential ◽  
Indium Gallium
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