scholarly journals P-11: Electrical Properties and Stability of Dual-Gate Coplanar Homojunction Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistor

2011 ◽  
Vol 42 (1) ◽  
pp. 1136-1139 ◽  
Author(s):  
Gwanghyeon Baek ◽  
Alex Kuo ◽  
Jerzy Kanicki ◽  
Katsumi Abe ◽  
Hideya Kumomi
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Electrical Properties ◽  
Thin Film Transistor ◽  
Oxide Thin Film ◽  
Indium Gallium Zinc Oxide ◽  
Zinc Oxide Thin Film ◽  
Dual Gate ◽  
Indium Gallium

scholarly journals Effect of top gate potential on bias-stress for dual gate amorphous indium-gallium-zinc-oxide thin film transistor

AIP Advances ◽  
2016 ◽  
Vol 6 (7) ◽  
pp. 075217 ◽  
Author(s):  
Minkyu Chun ◽  
Jae Gwang Um ◽  
Min Sang Park ◽  
Md Delwar Hossain Chowdhury ◽  
Jin Jang
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistor ◽  
Oxide Thin Film ◽  
Indium Gallium Zinc Oxide ◽  
Zinc Oxide Thin Film ◽  
Bias Stress ◽  
Dual Gate ◽  
Gate Potential ◽  
Indium Gallium

Dual gate indium-gallium-zinc-oxide thin film transistor with an unisolated floating metal gate for threshold voltage modulation and mobility enhancement

2011 ◽  
Vol 98 (15) ◽  
pp. 153506 ◽  
Author(s):  
Hsiao-Wen Zan ◽  
Wei-Tsung Chen ◽  
Chung-Cheng Yeh ◽  
Hsiu-Wen Hsueh ◽  
Chuang-Chuang Tsai ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Threshold Voltage ◽  
Thin Film Transistor ◽  
Oxide Thin Film ◽  
Indium Gallium Zinc Oxide ◽  
Zinc Oxide Thin Film ◽  
Metal Gate ◽  
Dual Gate ◽  
Indium Gallium

Indium–gallium–zinc–oxide thin-film transistor with a planar split dual-gate structure

2017 ◽  
Vol 31 (35) ◽  
pp. 1750332
Author(s):  
Yu-Rong Liu ◽  
Jie Liu ◽  
Jia-Qi Song ◽  
Pui-To Lai ◽  
Ruo-He Yao
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistor ◽  
Oxide Thin Film ◽  
Indium Gallium Zinc Oxide ◽  
Practical Applications ◽  
Gate Structure ◽  
Dual Gate ◽  
Indium Gallium ◽  
Output Characteristics

An amorphous indium–gallium–zinc–oxide (a-IGZO) thin-film transistor (TFT) with a planar split dual gate (PSDG) structure has been proposed, fabricated and characterized. Experimental results indicate that the two independent gates can provide dynamical control of device characteristics such as threshold voltage, sub-threshold swing, off-state current and saturation current. The transconductance extracted from the output characteristics of the device increases from [Formula: see text] to [Formula: see text] for a change of control gate voltage from −2 V to 2 V, and thus the device could be used in a variable-gain amplifier. A significant advantage of the PSDG structure is its flexibility in controlling the device performance according to the need of practical applications.

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