Influence of Oxygen Partial Pressure on Resistance Random Access Memory Characteristics of Indium Gallium Zinc Oxide

2011 ◽  
Vol 14 (12) ◽  
pp. H475 ◽  
Author(s):  
Min-Chen Chen ◽  
Ting-Chang Chang ◽  
Sheng-Yao Huang ◽  
Guan-Chang Chang ◽  
Shih-Cheng Chen ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Random Access ◽  
Random Access Memory ◽  
Indium Gallium Zinc Oxide ◽  
Access Memory ◽  
Resistance Random Access Memory ◽  
Indium Gallium ◽  
Memory Characteristics

Effect of oxygen partial pressure on the performance of indium gallium zinc oxide thin film transistor

2016 ◽  
Vol 31 (6) ◽  
pp. 558-562
Author(s):  
孙建明 SUN Jian-ming ◽  
周婷婷 ZHOU Ting-ting ◽  
任庆荣 REN Qing-rong ◽  
胡合合 HU He-he ◽  
陈 宁 CHEN Ning ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Thin Film Transistor ◽  
Oxide Thin Film ◽  
Indium Gallium Zinc Oxide ◽  
Zinc Oxide Thin Film ◽  
Indium Gallium ◽  
Effect Of Oxygen

Effects of Thickness on Resistance Switching Properties of ZnMn2O4 Films Deposited by Magnetron Sputtering

2014 ◽  
Vol 941-944 ◽  
pp. 1275-1278
Author(s):  
Hua Wang ◽  
Zhi Da Li ◽  
Ji Wen Xu ◽  
Yu Pei Zhang ◽  
Ling Yang ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Random Access ◽  
Random Access Memory ◽  
Resistance Switching ◽  
Switching Behavior ◽  
Si Substrate ◽  
Access Memory ◽  
Resistive Switching Behavior ◽  
Bipolar Resistive Switching ◽  
Resistance Random Access Memory

ZnMn2O4films for resistance random access memory (RRAM) were fabricated on p-Si substrate by magnetron sputtering. The effects of thickness onI-Vcharacteristics, resistance switching behavior and endurance characteristics of ZnMn2O4films were investigated. The ZnMn2O4films with a structure of Ag/ZnMn2O4/p-Si exhibit bipolar resistive switching behavior. With the increase of thickness of ZnMn2O4films from 0.83μm to 2.3μm, both theVONand the number of stable repetition switching cycle increase, but theRHRS/RLRSratio decrease, which indicated that the ZnMn2O4films with a thickness of 0.83μm has the biggestRHRS/RLRSratio and the lowestVONandVOFF, but the worst endurance characteristics.

Resistance random access memory switching mechanism

2007 ◽  
Vol 101 (2) ◽  
pp. 024517 ◽  
Author(s):  
Sheng T. Hsu ◽  
Tingkai Li ◽  
Nobuyoshi Awaya
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Switching Mechanism ◽  
Memory Switching ◽  
Resistance Random Access Memory

Performance and characteristics of double layer porous silicon oxide resistance random access memory

2013 ◽  
Vol 102 (25) ◽  
pp. 253509 ◽  
Author(s):  
Tsung-Ming Tsai ◽  
Kuan-Chang Chang ◽  
Rui Zhang ◽  
Ting-Chang Chang ◽  
J. C. Lou ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Double Layer ◽  
Silicon Oxide ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Resistance Random Access Memory
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