Observation of decreasing resistivity of amorphous indium gallium zinc oxide thin films with an increasing oxygen partial pressure

2017 ◽  
Vol 121 (4) ◽  
pp. 045305 ◽  
Author(s):  
Anup K. Singh ◽  
Sonachand Adhikari ◽  
Rajeev Gupta ◽  
Deepak
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Indium Gallium Zinc Oxide ◽  
Oxide Thin Films ◽  
Indium Gallium

Dry Etching Characteristics of Amorphous Indium-Gallium-Zinc-Oxide Thin Films

2012 ◽  
Vol 14 (10) ◽  
pp. 915-918 ◽  
Author(s):  
Yanbin Zheng ◽  
Guang Li ◽  
Wenlong Wang ◽  
Xiuchang Li ◽  
Zhigang Jiang
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Dry Etching ◽  
Indium Gallium Zinc Oxide ◽  
Oxide Thin Films ◽  
Indium Gallium

Effect of oxygen partial pressure on the performance of indium gallium zinc oxide thin film transistor

2016 ◽  
Vol 31 (6) ◽  
pp. 558-562
Author(s):  
孙建明 SUN Jian-ming ◽  
周婷婷 ZHOU Ting-ting ◽  
任庆荣 REN Qing-rong ◽  
胡合合 HU He-he ◽  
陈 宁 CHEN Ning ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Thin Film Transistor ◽  
Oxide Thin Film ◽  
Indium Gallium Zinc Oxide ◽  
Zinc Oxide Thin Film ◽  
Indium Gallium ◽  
Effect Of Oxygen

Lubricity of zinc oxide thin films: Study of deposition parameters and Si as an additive

2001 ◽  
Vol 16 (12) ◽  
pp. 3423-3429 ◽  
Author(s):  
J. J. Nainaparampil ◽  
J. S. Zabinski
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Sample Surface ◽  
Pressure Control ◽  
Oxide Thin Films ◽  
Deposition Parameters ◽  
Good Potential ◽  
Si Doped

Zinc oxide preferentially crystallizes into a wurzite structure and has a unique set of properties. There have been numerous studies on doped zinc oxide thin films as an optical coating or as a semiconductor material. However, very little work has been reported on its tribological properties. Recent reports from this laboratory revealed that ZnO has good potential for controlling friction and wear. ZnO has an open structure and favorable coordination number, which permits zinc to freely move to different positions in the crystal lattice and to accommodate external atoms as substitutes. The nature of the substitution and the concentration of Zn interstitials may be used to control tribological performance. In this work, thin films of zinc oxide were deposited by pulsed laser ablation while silicon was added simultaneously by magnetron sputtering. The effects of deposition geometry and oxygen partial pressure on stoichiometry and microstructure were evaluated. It was found that the angle of deposition and oxygen partial pressure control coating texture. Depositions normal to the sample surface, along with 10 mtorr of oxygen, produced strong (002) texture. These conditions were selected for Si-doping studies. The tribological characteristics of Si-doped coatings were evaluated at both room and high temperature. Addition of Si around 7–8% gave a coefficient of friction of about 0.2 at 300 °C, decreasing to 0.13 around 500 °C.

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