Improved characteristics of amorphous indium-gallium-zinc-oxide-based resistive random access memory using hydrogen post-annealing

2016 ◽  
Vol 109 (7) ◽  
pp. 073105 ◽  
Author(s):  
Dae Yun Kang ◽  
Tae-Ho Lee ◽  
Tae Geun Kim
Keyword(s):  
Zinc Oxide ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Indium Gallium Zinc Oxide ◽  
Access Memory ◽  
Post Annealing ◽  
Indium Gallium ◽  
Improved Characteristics

Low switching-threshold-voltage zinc oxide nanowire array resistive random access memory

2016 ◽  
Vol 618 ◽  
pp. 90-94 ◽  
Author(s):  
Guan-Hung Shen ◽  
Andrew Ronaldi Tandio ◽  
Mei-Yu Lin ◽  
Gao-Feng Lin ◽  
Kai-Huang Chen ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Threshold Voltage ◽  
Nanowire Array ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
Switching Threshold ◽  
Zinc Oxide Nanowire ◽  
Switching Threshold Voltage

Amorphous ZnO based resistive random access memory

RSC Advances ◽  
2016 ◽  
Vol 6 (22) ◽  
pp. 17867-17872 ◽  
Author(s):  
Yong Huang ◽  
Zihan Shen ◽  
Ye Wu ◽  
Xiaoqiu Wang ◽  
Shufang Zhang ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Resistive Switching ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
Switching Characteristics

Amorphous zinc oxide (a-ZnO) based resistive random access memory (RRAM) Ag/a-ZnO/Pt devices were fabricated and their resistive switching characteristics investigated.

scholarly journals Highly reliable switching via phase transition using hydrogen peroxide in homogeneous and multi-layered GaZnOx-based resistive random access memory devices

2015 ◽  
Vol 51 (44) ◽  
pp. 9173-9176 ◽  
Author(s):  
Sung Pyo Park ◽  
Doo Hyun Yoon ◽  
Young Jun Tak ◽  
Heesoo Lee ◽  
Hyun Jae Kim
Keyword(s):  
Phase Transition ◽  
Hydrogen Peroxide ◽  
Zinc Oxide ◽  
Resistive Switching ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Memory Devices ◽  
Access Memory ◽  
Switching Characteristics

Here, we propose an effective method for improving the resistive switching characteristics of solution-processed gallium-doped zinc oxide (GaZnOx) resistive random access memory (RRAM) devices using hydrogen peroxide.

Improvement of Resistive Switching Characteristics in Zinc Oxide-Based Resistive Random Access Memory by Ammoniation Annealing

2020 ◽  
Vol 41 (3) ◽  
pp. 357-360 ◽  
Author(s):  
Pei-Yu Wu ◽  
Hao-Xuan Zheng ◽  
Chih-Cheng Shih ◽  
Ting-Chang Chang ◽  
Wei-Jang Chen ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Resistive Switching ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
Switching Characteristics
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