scholarly journals Highly Non-linear and Reliable Amorphous Silicon Based Back-to-Back Schottky Diode as Selector Device for Large Scale RRAM Arrays

2017 ◽  
Vol 6 (9) ◽  
pp. N143-N147 ◽  
Author(s):  
Cheng-Chih Hsieh ◽  
Yao-Feng Chang ◽  
Ying-Chen Chen ◽  
Davood Shahrjerdi ◽  
Sanjay K. Banerjee
Keyword(s):  
Amorphous Silicon ◽  
Schottky Diode ◽  
Large Scale ◽  
Non Linear ◽  
Silicon Based

Technological Development for Commercialization of Amorphous Silicon Based Multijunction Modules

1996 ◽  
Vol 420 ◽  
Author(s):  
Liyou Yang ◽  
M. Bennett ◽  
L. Chen ◽  
K. Jansen ◽  
J. Kessler ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Conversion Efficiency ◽  
Large Scale ◽  
Technological Development ◽  
Large Area ◽  
High Quality ◽  
Photovoltaic Modules ◽  
Silicon Based

AbstractSome of the significant steps in technological development for large-scale commercialization of amorphous silicon (a-Si:H) based multijunction photovoltaic modules are presented. These developments are establishing a high quality baseline process for manufacturing large-area ( ˜ 8 ft2) a-Si:H/a-SiGe:H tandem junction modules with improved stabilized conversion efficiency, throughput, yield, and reduced materials usage.

Technological Development for Commercialization of Amorphous Silicon Based Multijunction Modules

1996 ◽  
Vol 426 ◽  
Author(s):  
Liyou Yang ◽  
M. Bennett ◽  
L. Chen ◽  
K. Jansen ◽  
J. Kessler ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Conversion Efficiency ◽  
Large Scale ◽  
Technological Development ◽  
Large Area ◽  
High Quality ◽  
Photovoltaic Modules ◽  
Silicon Based

AbstractSome of the significant steps in technological development for large-scale commercialization of amorphous silicon (a-Si:H) based multijunction photovoltaic modules are presented. These developments are establishing a high quality baseline process for manufacturing large-area ( ∼ 8 ft2) a-Si:H/a-SiGe:H tandem junction modules with improved stabilized conversion efficiency, throughput, yield, and reduced materials usage.

Use of Transparent Conductive Oxide Materials with Low Indices of Refraction in Amorphous Silicon-Based Solar Cell Technology

2005 ◽  
Vol 862 ◽  
Author(s):  
Scott J. Jones ◽  
Joachim Doehler ◽  
Tongyu Liu ◽  
David Tsu ◽  
Jeff Steele ◽  
...  
Keyword(s):  
Solar Cell ◽  
Amorphous Silicon ◽  
Transparent Conductive Oxide ◽  
Open Circuit ◽  
Long Term Stability ◽  
Back Reflectors ◽  
Stability Issues ◽  
Silicon Based ◽  
Solar Cell Technology

AbstractNew types of transparent conductive oxides with low indices of refraction have been developed for use in optical stacks for the amorphous silicon (a-Si) solar cell and other thin film applications. The alloys are ZnO based with Si and MgF added to reduce the index of the materials through the creation of SiO2 or MgF2, with n=1.3-1.4, or the addition of voids in the materials. Alloys with 12-14% Si or Mg have indices of refraction at λ=800nm between 1.6 and 1.7. These materials are presently being used in optical stacks to enhance light scattering by Al/multi-layer/ZnO back reflectors in a-Si based solar cells to increase light absorption in the semiconductor layers and increase open circuit currents and boost device efficiencies. In contrast to Ag/ZnO back reflectors which have long term stability issues due to electromigration of Ag, these Al based back reflectors should be stable and usable in manufactured PV products. In this manuscript, structural properties for the materials will be reported as well as the performance of solar cell devices made using these new types of materials.

Low Power Pixel-Level ADC Readout Circuit for an Amorphous Silicon-Based Microbolometer

2009 ◽  
Vol E92-C (5) ◽  
pp. 708-712
Author(s):  
Dong-Heon HA ◽  
Chi Ho HWANG ◽  
Yong Soo LEE ◽  
Hee Chul LEE
Keyword(s):  
Low Power ◽  
Amorphous Silicon ◽  
Readout Circuit ◽  
Silicon Based

High switching uniformity and 50 fJ/bit energy consumption achieved in amorphous silicon-based memristive device with an AgInSbTe buffer layer

2021 ◽  
Vol 118 (26) ◽  
pp. 263507
Author(s):  
Yanyun Ren ◽  
Xiaojing Fu ◽  
Zhi Yang ◽  
Ruoyao Sun ◽  
Ya Lin ◽  
...  
Keyword(s):  
Energy Consumption ◽  
Amorphous Silicon ◽  
Buffer Layer ◽  
Memristive Device ◽  
Silicon Based

scholarly journals A Review on Terahertz Technologies Accelerated by Silicon Photonics

Nanomaterials ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 1646
Author(s):  
Jingya Xie ◽  
Wangcheng Ye ◽  
Linjie Zhou ◽  
Xuguang Guo ◽  
Xiaofei Zang ◽  
...  
Keyword(s):  
Integrated Circuit ◽  
Silicon Photonics ◽  
Large Scale ◽  
Cost Effective ◽  
Single Chip ◽  
Photonic Integrated Circuit ◽  
Hybrid Silicon ◽  
The Cost ◽  
Silicon Based ◽  
Thz Applications

In the last couple of decades, terahertz (THz) technologies, which lie in the frequency gap between the infrared and microwaves, have been greatly enhanced and investigated due to possible opportunities in a plethora of THz applications, such as imaging, security, and wireless communications. Photonics has led the way to the generation, modulation, and detection of THz waves such as the photomixing technique. In tandem with these investigations, researchers have been exploring ways to use silicon photonics technologies for THz applications to leverage the cost-effective large-scale fabrication and integration opportunities that it would enable. Although silicon photonics has enabled the implementation of a large number of optical components for practical use, for THz integrated systems, we still face several challenges associated with high-quality hybrid silicon lasers, conversion efficiency, device integration, and fabrication. This paper provides an overview of recent progress in THz technologies based on silicon photonics or hybrid silicon photonics, including THz generation, detection, phase modulation, intensity modulation, and passive components. As silicon-based electronic and photonic circuits are further approaching THz frequencies, one single chip with electronics, photonics, and THz functions seems inevitable, resulting in the ultimate dream of a THz electronic–photonic integrated circuit.

Advances in amorphous silicon-based photonic technology

2002 ◽  
Vol 299-302 ◽  
pp. 1267-1271
Author(s):  
C.M Fortmann ◽  
A.H Mahan ◽  
N Hata
Keyword(s):  
Amorphous Silicon ◽  
Silicon Based
Sign in / Sign up

Export Citation Format

Share Document