Two-Step Molecular Beam Epitaxy Growth of Bismuth Telluride Nanoplate Thin Film with Enhanced Thermoelectric Properties

2014 ◽  
Vol 3 (8) ◽  
pp. P99-P101 ◽  
Author(s):  
Z. Wang ◽  
X. Zhang ◽  
Z. Zeng ◽  
Z. Zhang ◽  
Z. Hu
Keyword(s):  
Thin Film ◽  
Molecular Beam Epitaxy ◽  
Thermoelectric Properties ◽  
Bismuth Telluride ◽  
Molecular Beam ◽  
Molecular Beam Epitaxy Growth

Molecular beam epitaxy growth of nonmagnetic Weyl semimetal LaAlGe thin film

2020 ◽  
Vol 10 (2) ◽  
pp. 272-277
Author(s):  
Niraj Bhattarai ◽  
Andrew W. Forbes ◽  
Rajendra P. Dulal ◽  
Ian L. Pegg ◽  
John Philip
Keyword(s):  
Thin Film ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Molecular Beam Epitaxy Growth ◽  
Weyl Semimetal ◽  
Image Position

scholarly journals Molecular Beam Epitaxy Growth and Surface Structural Characteristics of PbTe(111) Thin Film

2017 ◽  
Vol 33 (2) ◽  
pp. 419-425
Author(s):  
Hai-Fei WU ◽  
◽  
Yao CHEN ◽  
Shan-Hu XU ◽  
Yong-Hong YAN ◽  
...  
Keyword(s):  
Thin Film ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Structural Characteristics ◽  
Molecular Beam Epitaxy Growth

scholarly journals Molecular beam epitaxy growth of multilayer FeSe thin film on SrTiO3 (001)

2016 ◽  
Vol 65 (12) ◽  
pp. 127401
Author(s):  
Zhang Ma-Lin ◽  
Ge Jian-Feng ◽  
Duan Ming-Chao ◽  
Yao Gang ◽  
Liu Zhi-Long ◽  
...  
Keyword(s):  
Thin Film ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Molecular Beam Epitaxy Growth

The relaxation of compressive biaxial strains in SOS via microtwins

1989 ◽  
Vol 47 ◽  
pp. 608-609
Author(s):  
M. E. Twigg ◽  
E. D. Richmond ◽  
J. G. Pellegrino
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Molecular Beam Epitaxy ◽  
Compressive Stress ◽  
Vapor Deposition ◽  
Partial Dislocation ◽  
Molecular Beam ◽  
Volume Fraction ◽  
Chemical Vapor ◽  
Silicon Thin Film

For heteroepitaxial systems, such as silicon on sapphire (SOS), microtwins occur in significant numbers and are thought to contribute to strain relief in the silicon thin film. The size of this contribution can be assessed from TEM measurements, of the differential volume fraction of microtwins, dV/dν (the derivative of the microtwin volume V with respect to the film volume ν), for SOS grown by both chemical vapor deposition (CVD) and molecular beam epitaxy (MBE).In a (001) silicon thin film subjected to compressive stress along the [100] axis , this stress can be relieved by four twinning systems: a/6[211]/( lll), a/6(21l]/(l1l), a/6[21l] /( l1l), and a/6(2ll)/(1ll).3 For the a/6[211]/(1ll) system, the glide of a single a/6[2ll] twinning partial dislocation draws the two halves of the crystal, separated by the microtwin, closer together by a/3.

Model for molecular‐beam‐epitaxy growth over nonplanar surfaces

1988 ◽  
Vol 64 (7) ◽  
pp. 3522-3527 ◽  
Author(s):  
Mitsuru Ohtsuka ◽  
Seiichi Miyazawa
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Molecular Beam Epitaxy Growth

Molecular beam epitaxy growth of GaAsBi using As2 and As4

2014 ◽  
Vol 390 ◽  
pp. 120-124 ◽  
Author(s):  
Robert D. Richards ◽  
Faebian Bastiman ◽  
Christopher J. Hunter ◽  
Danuta F. Mendes ◽  
Abdul R. Mohmad ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Molecular Beam Epitaxy Growth
Sign in / Sign up

Export Citation Format

Share Document