Simulation of Gate Leakage Current of AlGaN/GaN HEMTs: Effects of the Gate Edges and Self-Heating

2017 ◽  
Vol 6 (11) ◽  
pp. S3025-S3029 ◽  
Author(s):  
Ashu Wang ◽  
Lingyan Zeng ◽  
Wen Wang
Keyword(s):  
Leakage Current ◽  
Gate Leakage Current ◽  
Gate Leakage ◽  
Self Heating ◽  
Gan Hemts

Effect of SiN:H x passivation layer on the reverse gate leakage current in GaN HEMTs

2018 ◽  
Vol 27 (9) ◽  
pp. 097309 ◽  
Author(s):  
Sheng Zhang ◽  
Ke Wei ◽  
Yang Xiao ◽  
Xiao-Hua Ma ◽  
Yi-Chuan Zhang ◽  
...  
Keyword(s):  
Leakage Current ◽  
Passivation Layer ◽  
Gate Leakage Current ◽  
Gate Leakage ◽  
Gan Hemts

Reduced reverse gate leakage current for GaN HEMTs with 3 nm Al/40 nm SiN passivation layer

2019 ◽  
Vol 114 (1) ◽  
pp. 013503 ◽  
Author(s):  
Sheng Zhang ◽  
Ke Wei ◽  
Xiao-Hua Ma ◽  
Bin Hou ◽  
Guo-Guo Liu ◽  
...  
Keyword(s):  
Leakage Current ◽  
Passivation Layer ◽  
Gate Leakage Current ◽  
Gate Leakage ◽  
Gan Hemts

Self-heating and gate leakage current in a guarded MOSFET

1972 ◽  
Vol 60 (3) ◽  
pp. 342-343 ◽  
Author(s):  
V.C. Negro ◽  
L. Pannone
Keyword(s):  
Leakage Current ◽  
Gate Leakage Current ◽  
Gate Leakage ◽  
Self Heating

Surface Acceptor-Like Trap Model for Gate Leakage Current Degradation in Lattice-Matched InAlN/GaN HEMTs

2015 ◽  
Vol 36 (12) ◽  
pp. 1281-1283 ◽  
Author(s):  
Dawei Yan ◽  
Jian Ren ◽  
Guofeng Yang ◽  
Shaoqing Xiao ◽  
Xiaofeng Gu ◽  
...  
Keyword(s):  
Leakage Current ◽  
Gate Leakage Current ◽  
Gate Leakage ◽  
Gan Hemts ◽  
Lattice Matched

scholarly journals Design of Hybrid Schottky-Ohmic Gate in Normally-Off p-GaN Gate AlGaN/GaN HEMTs

2021 ◽  
Author(s):  
Wen-Shiuan Tsai ◽  
Zhen-Wei Qin ◽  
Yue-ming Hsin
Keyword(s):  
Leakage Current ◽  
Drain Current ◽  
Contact Length ◽  
Optimal Performance ◽  
Hole Injection ◽  
Gate Leakage Current ◽  
Gate Leakage ◽  
Gate Structure ◽  
Left And Right ◽  
Gan Hemts

Abstract This study proposes three hybrid Schottky-ohmic gate structures for normally-off p-GaN gate AlGaN/GaN HEMTs. One has a Schottky-gate cover on the ohmic-gate and has part of the area contact to the p-GaN surface at the left and right sides of ohmic-gate (Structure A). The two others only have the Schottky-gate contact to the p-GaN surface at the left side (Structure B) or right side (Structure C) of the ohmic-gate. Different gate metal designs change the hole injection from p-GaN to GaN channel and show various gate leakages. The optimized contact length of Schottky-gate can suppress on-state gate leakage current over two orders of magnitude compared to conventional ohmic p-GaN gate HEMT. The improved on-state maximum drain current is over 60 mA/mm compared to Schottky p-GaN gate HEMT. Optimal performance in Structure B with Schottky-gate contact length ranges from 0.8 to 1.8 μm in a 2 μm gate geometry.

scholarly journals Analysis of DC Characteristics in GaN-Based Metal-Insulator-Semiconductor High Electron Mobility Transistor with Variation of Gate Dielectric Layer Composition by Considering Self-Heating Effect

2019 ◽  
Vol 9 (17) ◽  
pp. 3610 ◽  
Author(s):  
Hwang ◽  
Jang ◽  
Kim ◽  
Lee ◽  
Lim ◽  
...  
Keyword(s):  
Leakage Current ◽  
Dielectric Layer ◽  
Gate Dielectric ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
Gate Leakage Current ◽  
Gate Leakage ◽  
Metal Insulator ◽  
Self Heating ◽  
Dc Characteristics

This study investigates metal-insulator-semiconductor high electron mobility transistor DC characteristics with different gate dielectric layer compositions and thicknesses, and lattice temperature effects on gate leakage current by using a two-dimensional simulation. We first compared electrical properties, including threshold voltage, transconductance, and gate leakage current with the self-heating effect, by applying a single Si3N4 dielectric layer. We then employed different Al2O3 dielectric layer thicknesses on top of the Si3N4, and also investigated lattice temperature across a two-dimensional electron gas channel layer with various dielectric layer compositions to verify the thermal effect on gate leakage current. Gate leakage current was significantly reduced as the dielectric layer was added, and further decreased for a 15-nm thick Al2O3 on a 5-nm Si3N4 structure. Although the gate leakage current increased as Al2O3 thickness increased to 35 nm, the breakdown voltage was improved.

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