Self-heating and gate leakage current in a guarded MOSFET

1972 ◽  
Vol 60 (3) ◽  
pp. 342-343 ◽  
Author(s):  
V.C. Negro ◽  
L. Pannone
Keyword(s):  
Leakage Current ◽  
Gate Leakage Current ◽  
Gate Leakage ◽  
Self Heating

scholarly journals Analysis of DC Characteristics in GaN-Based Metal-Insulator-Semiconductor High Electron Mobility Transistor with Variation of Gate Dielectric Layer Composition by Considering Self-Heating Effect

2019 ◽  
Vol 9 (17) ◽  
pp. 3610 ◽  
Author(s):  
Hwang ◽  
Jang ◽  
Kim ◽  
Lee ◽  
Lim ◽  
...  
Keyword(s):  
Leakage Current ◽  
Dielectric Layer ◽  
Gate Dielectric ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
Gate Leakage Current ◽  
Gate Leakage ◽  
Metal Insulator ◽  
Self Heating ◽  
Dc Characteristics

This study investigates metal-insulator-semiconductor high electron mobility transistor DC characteristics with different gate dielectric layer compositions and thicknesses, and lattice temperature effects on gate leakage current by using a two-dimensional simulation. We first compared electrical properties, including threshold voltage, transconductance, and gate leakage current with the self-heating effect, by applying a single Si3N4 dielectric layer. We then employed different Al2O3 dielectric layer thicknesses on top of the Si3N4, and also investigated lattice temperature across a two-dimensional electron gas channel layer with various dielectric layer compositions to verify the thermal effect on gate leakage current. Gate leakage current was significantly reduced as the dielectric layer was added, and further decreased for a 15-nm thick Al2O3 on a 5-nm Si3N4 structure. Although the gate leakage current increased as Al2O3 thickness increased to 35 nm, the breakdown voltage was improved.

scholarly journals Oxygen vacancy drift controlled three-terminal ReRAM with a reduction in operating gate bias and gate leakage current

2018 ◽  
Vol 328 ◽  
pp. 30-34 ◽  
Author(s):  
Qi Wang ◽  
Yaomi Itoh ◽  
Tohru Tsuruoka ◽  
Masakazu Aono ◽  
Deyan He ◽  
...  
Keyword(s):  
Oxygen Vacancy ◽  
Leakage Current ◽  
Gate Bias ◽  
Gate Leakage Current ◽  
Gate Leakage
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