Increasing More Bonding Energy in Nitrogen Plasma-Activated Wafer Bonding by HF-Dip

2014 ◽  
Vol 3 (8) ◽  
pp. P102-P104 ◽  
Author(s):  
F.- S. Lo ◽  
C. C. Chiang ◽  
C. Li ◽  
T.- H. Lee
Keyword(s):  
Wafer Bonding ◽  
Nitrogen Plasma ◽  
Bonding Energy

scholarly journals A comparative study of the bonding energy in adhesive wafer bonding

2013 ◽  
Vol 23 (8) ◽  
pp. 085019 ◽  
Author(s):  
F Forsberg ◽  
F Saharil ◽  
T Haraldsson ◽  
N Roxhed ◽  
G Stemme ◽  
...  
Keyword(s):  
Comparative Study ◽  
Wafer Bonding ◽  
Bonding Energy

scholarly journals A novel method to detect wafer-bonding energy using function fitting

2021 ◽  
Vol 92 (12) ◽  
pp. 123707
Author(s):  
Jianhan Fan ◽  
Kaiming Yang ◽  
Yu Zhu ◽  
Sen Lu
Keyword(s):  
Wafer Bonding ◽  
Bonding Energy ◽  
Function Fitting ◽  
Novel Method

Electrical characterisation of UHV-bonded silicon interfaces

2001 ◽  
Vol 681 ◽  
Author(s):  
A. Reznicek ◽  
S. Senz ◽  
O. Breitenstein ◽  
R. Scholz ◽  
U. Gösele
Keyword(s):  
Current Density ◽  
Wafer Bonding ◽  
Applied Voltage ◽  
High Current Density ◽  
Strong Dependence ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Bonding Energy ◽  
Constant Density ◽  
Trap States

ABSTRACTDirect wafer bonding can be used to mechanically and electrically connect semiconductors. In our experiments two 100 mm diameter (100) Si wafers (n-doping: 1014 cm−3) are first cleaned by standard chemical cleaning (RCA 1, 2). The surface is terminated by hydrogen after a HF dipping. The wafers are prebonded in air to protect the surface. After introduction into the ultra high vacuum (UHV) system the wafers are separated again. The hydrogen termination is released in a heating chamber. RHEED confirmed a surface reconstruction. The wafers are then cooled down to room temperature and bonded in UHV. The bonding energy is very close to the bulk bonding energy.Measurements of whole n-n wafers showed a linear relationship of voltage and current at a low current density of 0.05 A/cm2. The current flow is inhomogeneous, which is visible in IR- thermography images. Above 0.1 V the current density first saturates, but increases super- linearly for higher voltages. The electrical properties of a grain boundary can be modeled by a double Schottky barrier. The barrier height decreases with increasing applied voltage. C-V measurements show a strong dependence of capacitance on frequency, temperature and applied voltage.The capacitance increases with higher temperature and lower frequency. The interface state density can be estimated from the low temperature and high frequency capacitance limit as Dit = 1·1011 cm−2 eV−1 assuming a constant density of states.We can conclude that in order to avoid the undesirable effect of the potential barrier and trap states at the bonding interface a high doping near the interface is required for the application of wafer bonding to devices with a high current density across the bonded interface.

The Study of the Bonding Energy on Silicon-to-Glass Wafer Bonding

2019 ◽  
Vol 33 (4) ◽  
pp. 501-507 ◽  
Author(s):  
Ta-Ko Chuang ◽  
Alex Usenko ◽  
Jeffery Cites
Keyword(s):  
Wafer Bonding ◽  
Bonding Energy ◽  
Glass Wafer

Ammonium Hydroxide Effect on Low-Temperature Wafer Bonding Energy Enhancement

2005 ◽  
Vol 8 (3) ◽  
pp. G74 ◽  
Author(s):  
Y.-L. Chao ◽  
Q.-Y. Tong ◽  
T.-H. Lee ◽  
M. Reiche ◽  
R. Scholz ◽  
...  
Keyword(s):  
Low Temperature ◽  
Wafer Bonding ◽  
Ammonium Hydroxide ◽  
Bonding Energy
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