Enhancement of Bonding Strength for Low Temperature Si3N4/Si3N4 Direct Wafer Bonding by Nitrogen-Plasma Activation and Hydrofluoric Pre-dip

2014 ◽  
Vol 64 (5) ◽  
pp. 111-117
Author(s):  
F. - S. Lo ◽  
C. - C. Chiang ◽  
C. Li ◽  
T. - H. Lee
Keyword(s):  
Low Temperature ◽  
Wafer Bonding ◽  
Bonding Strength ◽  
Nitrogen Plasma ◽  
Plasma Activation ◽  
Direct Wafer Bonding

Plasma activation assisted low-temperature direct wafer bonding

2012 ◽  
Author(s):  
Hongyao Chua ◽  
Xianshu Luo ◽  
Wai Hong See Toh ◽  
Junfeng Song ◽  
Tsung-Yang Liow ◽  
...  
Keyword(s):  
Low Temperature ◽  
Wafer Bonding ◽  
Plasma Activation ◽  
Direct Wafer Bonding

(Invited) Plasma Activation as a Pretreatment Tool for Low-Temperature Direct Wafer Bonding in Microsystems Technology

2013 ◽  
Vol 50 (7) ◽  
pp. 265-276 ◽  
Author(s):  
M. Eichler ◽  
P. Hennecke ◽  
K. Nagel ◽  
M. Gabriel ◽  
C.-P. Klages
Keyword(s):  
Low Temperature ◽  
Wafer Bonding ◽  
Plasma Activation ◽  
Direct Wafer Bonding ◽  
Microsystems Technology

scholarly journals Low temperature direct wafer bonding of GaAs to Si via plasma activation

2013 ◽  
Vol 102 (5) ◽  
pp. 054107 ◽  
Author(s):  
C. Y. Yeo ◽  
D. W. Xu ◽  
S. F. Yoon ◽  
E. A. Fitzgerald
Keyword(s):  
Low Temperature ◽  
Wafer Bonding ◽  
Plasma Activation ◽  
Direct Wafer Bonding

High Precision Low Temperature Direct Wafer Bonding Technology for Wafer-Level 3D ICs Manufacturing

2016 ◽  
Vol 75 (9) ◽  
pp. 345-353 ◽  
Author(s):  
F. Kurz ◽  
T. Plach ◽  
J. Suss ◽  
T. Wagenleitner ◽  
D. Zinner ◽  
...  
Keyword(s):  
Low Temperature ◽  
High Precision ◽  
Wafer Bonding ◽  
Wafer Level ◽  
3D Ics ◽  
Direct Wafer Bonding ◽  
Bonding Technology

Low temperature GaAs/Si direct wafer bonding

2000 ◽  
Vol 36 (7) ◽  
pp. 677 ◽  
Author(s):  
M. Alexe ◽  
V. Dragoi ◽  
M. Reiche ◽  
U. Gösele
Keyword(s):  
Low Temperature ◽  
Wafer Bonding ◽  
Direct Wafer Bonding ◽  
Low Temperature Gaas
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