The Study of the Bonding Energy on Silicon-to-Glass Wafer Bonding

2019 ◽  
Vol 33 (4) ◽  
pp. 501-507 ◽  
Author(s):  
Ta-Ko Chuang ◽  
Alex Usenko ◽  
Jeffery Cites
Keyword(s):  
Wafer Bonding ◽  
Bonding Energy ◽  
Glass Wafer

Increasing More Bonding Energy in Nitrogen Plasma-Activated Wafer Bonding by HF-Dip

2014 ◽  
Vol 3 (8) ◽  
pp. P102-P104 ◽  
Author(s):  
F.- S. Lo ◽  
C. C. Chiang ◽  
C. Li ◽  
T.- H. Lee
Keyword(s):  
Wafer Bonding ◽  
Nitrogen Plasma ◽  
Bonding Energy

scholarly journals A comparative study of the bonding energy in adhesive wafer bonding

2013 ◽  
Vol 23 (8) ◽  
pp. 085019 ◽  
Author(s):  
F Forsberg ◽  
F Saharil ◽  
T Haraldsson ◽  
N Roxhed ◽  
G Stemme ◽  
...  
Keyword(s):  
Comparative Study ◽  
Wafer Bonding ◽  
Bonding Energy

Glass-Glass Wafer Bonding for Microfluidic Devices

2008 ◽  
Author(s):  
Nick Aitken ◽  
Tony Rogers
Keyword(s):  
Wafer Bonding ◽  
Device Fabrication ◽  
Bonding Process ◽  
Glass Wafer ◽  
Wafer Level ◽  
Fluidic Devices ◽  
Polymer Devices ◽  
Acoustic Wave Device ◽  
Wave Device ◽  
Absorption Measurements

The AML AWB04 wafer bonding platform has been used to develop glass – glass bonding processes for both quartz and Pyrex substrates. This allows the accurate wafer to wafer alignment and bonding of two microfluidic (or any other glass device) wafers. In the case of Quartz, the process is also useful in the field of SAW (Surface Acoustic Wave) device fabrication. Although there are simpler and cheaper ways of creating micro fluidic devices (e.g adhesive bonded glass wafers, or all polymer devices), Pyrex is often required as the material is qualified for use in pharmaceutical and medical industries. The transmission properties of glass are also often needed where optical sensing and measurement is required. Pyrex is often needed for chemical compatibility, and is commonly used for glassware. Using the AML equipment, Pyrex and Quartz devices can be sealed at the wafer level with placement accuracies approaching ±1μm. The bonding process can also seal vacuum cavities, or seal controlled atmosphere cavities (e.g. reference cavities for optical absorption measurements). It is sometimes important to maintain precise glass micromachining dimensions and therefore it is necessary to bond at a temperature substantially less than the strain point of the glass: the AML equipment and processes can achieve this. The sealing strength is sufficient to withstand high pressure fluidic applications.

Silicon–glass wafer bonding with silicon hydrophilic fusion bonding technology

1999 ◽  
Vol 72 (1) ◽  
pp. 46-48 ◽  
Author(s):  
Zhi-Xiong Xiao ◽  
Guo-Ying Wu ◽  
Zhi-Hong Li ◽  
Guo-Bing Zhang ◽  
Yi-Long Hao ◽  
...  
Keyword(s):  
Wafer Bonding ◽  
Glass Wafer ◽  
Fusion Bonding ◽  
Bonding Technology

Low temperature glass-to-glass wafer bonding

2003 ◽  
Vol 26 (3) ◽  
pp. 289-294 ◽  
Author(s):  
Jun Wei ◽  
S.M.L. Nai ◽  
C.K.S. Wong ◽  
Zheng Sun ◽  
Loke Chong Lee
Keyword(s):  
Low Temperature ◽  
Wafer Bonding ◽  
Glass Wafer

scholarly journals A novel method to detect wafer-bonding energy using function fitting

2021 ◽  
Vol 92 (12) ◽  
pp. 123707
Author(s):  
Jianhan Fan ◽  
Kaiming Yang ◽  
Yu Zhu ◽  
Sen Lu
Keyword(s):  
Wafer Bonding ◽  
Bonding Energy ◽  
Function Fitting ◽  
Novel Method

Electrical characterisation of UHV-bonded silicon interfaces

2001 ◽  
Vol 681 ◽  
Author(s):  
A. Reznicek ◽  
S. Senz ◽  
O. Breitenstein ◽  
R. Scholz ◽  
U. Gösele
Keyword(s):  
Current Density ◽  
Wafer Bonding ◽  
Applied Voltage ◽  
High Current Density ◽  
Strong Dependence ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Bonding Energy ◽  
Constant Density ◽  
Trap States

ABSTRACTDirect wafer bonding can be used to mechanically and electrically connect semiconductors. In our experiments two 100 mm diameter (100) Si wafers (n-doping: 1014 cm−3) are first cleaned by standard chemical cleaning (RCA 1, 2). The surface is terminated by hydrogen after a HF dipping. The wafers are prebonded in air to protect the surface. After introduction into the ultra high vacuum (UHV) system the wafers are separated again. The hydrogen termination is released in a heating chamber. RHEED confirmed a surface reconstruction. The wafers are then cooled down to room temperature and bonded in UHV. The bonding energy is very close to the bulk bonding energy.Measurements of whole n-n wafers showed a linear relationship of voltage and current at a low current density of 0.05 A/cm2. The current flow is inhomogeneous, which is visible in IR- thermography images. Above 0.1 V the current density first saturates, but increases super- linearly for higher voltages. The electrical properties of a grain boundary can be modeled by a double Schottky barrier. The barrier height decreases with increasing applied voltage. C-V measurements show a strong dependence of capacitance on frequency, temperature and applied voltage.The capacitance increases with higher temperature and lower frequency. The interface state density can be estimated from the low temperature and high frequency capacitance limit as Dit = 1·1011 cm−2 eV−1 assuming a constant density of states.We can conclude that in order to avoid the undesirable effect of the potential barrier and trap states at the bonding interface a high doping near the interface is required for the application of wafer bonding to devices with a high current density across the bonded interface.

Silicon/glass wafer-to-wafer bonding with Ti/Ni intermediate bonding

1998 ◽  
Vol 71 (1-2) ◽  
pp. 123-126 ◽  
Author(s):  
Zhi-Xiong Xiao ◽  
Guo-Ying Wu ◽  
Dacheng Zhang ◽  
Guobing Zhang ◽  
Zhi-Hong Li ◽  
...  
Keyword(s):  
Wafer Bonding ◽  
Glass Wafer

Ammonium Hydroxide Effect on Low-Temperature Wafer Bonding Energy Enhancement

2005 ◽  
Vol 8 (3) ◽  
pp. G74 ◽  
Author(s):  
Y.-L. Chao ◽  
Q.-Y. Tong ◽  
T.-H. Lee ◽  
M. Reiche ◽  
R. Scholz ◽  
...  
Keyword(s):  
Low Temperature ◽  
Wafer Bonding ◽  
Ammonium Hydroxide ◽  
Bonding Energy
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