Al2O3/InGaAs Metal-Oxide-Semiconductor Interface Properties: Impact of Gd2O3and Sc2O3Interfacial Layers by Atomic Layer Deposition

2014 ◽  
Vol 3 (11) ◽  
pp. N133-N141 ◽  
Author(s):  
M. Ameen ◽  
L. Nyns ◽  
S. Sioncke ◽  
D. Lin ◽  
Ts. Ivanov ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Metal Oxide ◽  
Atomic Layer ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Interface Properties ◽  
Semiconductor Interface ◽  
Layer Deposition

Impact of atomic layer deposition temperature on HfO2/InGaAs metal-oxide-semiconductor interface properties

2012 ◽  
Vol 112 (8) ◽  
pp. 084103 ◽  
Author(s):  
Rena Suzuki ◽  
Noriyuki Taoka ◽  
Masafumi Yokoyama ◽  
Sang-Hyeon Kim ◽  
Takuya Hoshii ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Metal Oxide ◽  
Deposition Temperature ◽  
Atomic Layer ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Interface Properties ◽  
Semiconductor Interface ◽  
Layer Deposition

Trap states in AlGaN/GaN metal-oxide-semiconductor structures with Al2O3 prepared by atomic layer deposition

2010 ◽  
Vol 107 (10) ◽  
pp. 106104 ◽  
Author(s):  
D. Gregušová ◽  
R. Stoklas ◽  
Ch. Mizue ◽  
Y. Hori ◽  
J. Novák ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Metal Oxide ◽  
Atomic Layer ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Trap States ◽  
Semiconductor Structures ◽  
Layer Deposition
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