Ferroelectric Properties of HZO Ferroelectric Capacitors with Various Capping Electrodes and Annealing Conditions

2021 ◽  
Vol 104 (3) ◽  
pp. 31-34
Author(s):  
Jing-Wei Lin ◽  
Yan-Kui Liang ◽  
Yu Chen ◽  
Zhen-hao Li ◽  
Tsung-Che Chiang ◽  
...  
Keyword(s):  
Ferroelectric Properties ◽  
Annealing Conditions ◽  
Ferroelectric Capacitors

Ferroelectric Properties of HZO Ferroelectric Capacitors with Various Capping Electrodes and Annealing Conditions

2021 ◽  
Vol MA2021-02 (12) ◽  
pp. 612-612
Author(s):  
Jing-Wei Lin ◽  
Yan-Kui Liang ◽  
Yu Chen ◽  
Zhen-hao Li ◽  
Tsung-Che Chiang ◽  
...  
Keyword(s):  
Ferroelectric Properties ◽  
Annealing Conditions ◽  
Ferroelectric Capacitors

Ferroelectric Properties of Mn-Doped Bi3.6La0.4Ti3O12Thin Films Prepared under Different Annealing Conditions

2004 ◽  
Vol 43 (9B) ◽  
pp. 6590-6593 ◽  
Author(s):  
Jong-Pil Kim ◽  
Jae-Yeol Hwang ◽  
Chae-Ryong Cho ◽  
Min-Ki Ryu ◽  
Min-Su Jang ◽  
...  
Keyword(s):  
Ferroelectric Properties ◽  
Annealing Conditions ◽  
Mn Doped

Cell Sensing Margin of Lead-Free (Bi,La)4Ti3O12Thin Film Deposited on MTP Cell Structure in High Density FeRAM Device

2006 ◽  
Vol 510-511 ◽  
pp. 530-533
Author(s):  
J.H. Choi ◽  
H.S. Yoo ◽  
K.W. Cho ◽  
N.K. Kim ◽  
S.H. Oh ◽  
...  
Keyword(s):  
Data Storage ◽  
Bottom Electrode ◽  
Operating Temperature ◽  
Cell Structure ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Lead Free ◽  
Average Cell ◽  
Ferroelectric Capacitors ◽  
Device Operation

A 16Mb 1-transistor /1-capacitor (1T1C) FeRAM device was fabricated with lead-free Bi3.25La0.75Ti3.0O12 (BLT) capacitors. The key integration processes contain a scalable MTP (Merged Top-electrode and Plate-line) cell structure and reliable BLT ferroelectric capacitors. Ferroelectric properties of BLT films were optimized on the newly developed MTP cell structure. BLT films were coated on Pt/IrOx/Ir bottom electrode using sol-gel solutions. The composition of the optimized BLT film was about Bi3.25La0.75Ti3.0O12. The switchable polarization obtained in a 100nm-thick BLT film was about 20 µC/cm2 at the 3 V applied voltage, and the optimized BLT film showed a few fatigue losses about 10% up to 1 × 1011 cycles. The imprint properties of the BLT film were also characterized at 25°C and 90°C operating temperature after 125°C data storage. The average cell signal sensing margin between data "1" and data "0" was measured to be about 900 mV, which is a sufficiently large margin for device operation.

The Role of Precursor Chemistry in the Ferroelectric Properties of Donor Doped Pb(Zr,Ti)O3 Thin Films

1998 ◽  
Vol 541 ◽  
Author(s):  
Laura Fè ◽  
B. Malič ◽  
G. Norga ◽  
M. Kosec ◽  
D. J. Wouters ◽  
...  
Keyword(s):  
Thin Films ◽  
Lead Acetate ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Precursor Chemistry ◽  
Film Properties ◽  
Acetate Lead ◽  
Rectangular Hysteresis Loop ◽  
Ferroelectric Capacitors

AbstractModified sol-gel processes have been developed for the preparation of precursor solutions of undoped, La and Ta doped PZT (25/75). These processes use different solvents (methoxyethanol, butoxyethanol) and different lead sources (lead acetate, lead oxide). Due to variations in the structure and in the composition of the solutions, significantly different thermal decomposition behaviors were found. These inevitably affected texture and microstructure of the sol-gel derived thin films, demonstrating the important role of precursor chemistry in the improvement of film properties. In the case of tantalum doped Pt/PZT/Pt ferroelectric capacitors a rectangular hysteresis loop, featuring high Pr, was obtained for one specific precursor chemistry.

Ferroelectric properties of Mn-Doped Bi3.15Nd0.85Ti3O12 thin films prepared under different annealing conditions

2008 ◽  
Vol 62 (17-18) ◽  
pp. 2891-2893 ◽  
Author(s):  
X.L. Zhong ◽  
B. Li ◽  
J.B. Wang ◽  
M. Liao ◽  
H. Liao ◽  
...  
Keyword(s):  
Thin Films ◽  
Ferroelectric Properties ◽  
Annealing Conditions ◽  
Mn Doped

Sputtered Pb(Zr, Ti)O3 Thin Films for Ferroelectric Capacitors

1999 ◽  
Vol 596 ◽  
Author(s):  
T. Sakoda ◽  
K. Aoki ◽  
Y. Fukuda
Keyword(s):  
Thin Films ◽  
Ferroelectric Properties ◽  
Buffer Layers ◽  
Grain Structure ◽  
Rich Phase ◽  
Pzt Thin Films ◽  
Ferroelectric Capacitors ◽  
Polarization Retention ◽  
Good Retention ◽  
Lower Voltage

AbstractSputtered Pb(Zr, Ti)O3 thin films with superior ferroelectric properties were successfully obtained by controlling the grain structure and the film compositions. We found that amorphous PbTiO3 buffer layers are effective in forming PZT thin films with fine dense grains. The sputtered PZT thin films with Ti-rich phase showed excellent ferroelectric properties. The polarization retention properties of PZT capacitors with Ti-rich phase are remarkable, and the value of the retained polarization density after 10 years is expected to be larger than 40 μC/cm2. Further, 150-nm-thick PZT capacitors with Zr/Ti=30/70 showed 2P, at 1.5 V of more than 30 μC/cm2, and good retention property. These results indicate the potential of the lower voltage operation of sputtered PZT capacitors by optimizing the film composition and thickness.

scholarly journals Structure and Electrical Properties of Na0.5Bi0.5TiO3 Epitaxial Films with (110) Orientation

Crystals ◽  
2019 ◽  
Vol 9 (11) ◽  
pp. 558 ◽  
Author(s):  
Jianmin Song ◽  
Jie Gao ◽  
Suwei Zhang ◽  
Laihui Luo ◽  
Xiuhong Dai ◽  
...  
Keyword(s):  
Leakage Current ◽  
Ultraviolet Light ◽  
Leakage Current Density ◽  
Electric Fields ◽  
Current Density ◽  
Ferroelectric Properties ◽  
Srtio3 Substrate ◽  
Conduction Behavior ◽  
Effective Polarization ◽  
Ferroelectric Capacitors

Pt/Na0.5Bi0.5TiO3/La0.5Sr0.5CoO3 (Pt/NBT/LSCO) ferroelectric capacitors were fabricated on (110) SrTiO3 substrate. Both NBT and LSCO films were epitaxially grown on the (110) SrTiO3 substrate. It was found that the leakage current density of the Pt/NBT/LSCO capacitor is favorable to ohmic conduction behavior when the applied electric fields are lower than 60 kV/cm, and bulk-limited space charge-limited conduction takes place when the applied electric fields are higher than 60 kV/cm. The Pt/NBT/LSCO capacitor possesses good fatigue resistance and retention, as well as ferroelectric properties with Pr = 35 μC/cm2. The ferroelectric properties of the Pt/NBT/LSCO capacitor can be modulated by ultraviolet light. The effective polarization, ΔP, was reduced and the maximum polarization Pmax was increased for the Pt/NBT/LSCO capacitor when under ultraviolet light, which can be attributed to the increased leakage current density and non-reversible polarization P^ caused by the photo-generated carriers.

Composition control and ferroelectric properties of sidewalls in integrated three-dimensional SrBi2Ta2O9-based ferroelectric capacitors

2005 ◽  
Vol 98 (5) ◽  
pp. 054507 ◽  
Author(s):  
L. Goux ◽  
J. G. Lisoni ◽  
M. Schwitters ◽  
V. Paraschiv ◽  
D. Maes ◽  
...  
Keyword(s):  
Ferroelectric Properties ◽  
Three Dimensional ◽  
Composition Control ◽  
Ferroelectric Capacitors
Sign in / Sign up

Export Citation Format

Share Document