Composition control and ferroelectric properties of sidewalls in integrated three-dimensional SrBi2Ta2O9-based ferroelectric capacitors

2005 ◽  
Vol 98 (5) ◽  
pp. 054507 ◽  
Author(s):  
L. Goux ◽  
J. G. Lisoni ◽  
M. Schwitters ◽  
V. Paraschiv ◽  
D. Maes ◽  
...  
Keyword(s):  
Ferroelectric Properties ◽  
Three Dimensional ◽  
Composition Control ◽  
Ferroelectric Capacitors

Sidewalls contribution in integrated three-dimensional Sr0.8Bi2.2Ta2O9-based ferroelectric capacitors

2005 ◽  
Vol 87 (7) ◽  
pp. 073502 ◽  
Author(s):  
N. Menou ◽  
Ch. Turquat ◽  
V. Madigou ◽  
Ch. Muller ◽  
L. Goux ◽  
...  
Keyword(s):  
Three Dimensional ◽  
Ferroelectric Capacitors

Steel Parts with Tailored Material Gradients by 3D-Printing Using Nano-Particulate Ink

2005 ◽  
Vol 492-493 ◽  
pp. 679-684 ◽  
Author(s):  
Dirk Godlinski ◽  
Stéphane Morvan
Keyword(s):  
3D Printing ◽  
Solid Freeform Fabrication ◽  
Three Dimensional ◽  
Material Design ◽  
Nano Particles ◽  
Layer By Layer ◽  
Steel Matrix ◽  
Local Composition ◽  
Composition Control ◽  
Halftone Image

It is difficult to generate any user-defined three dimensional gradient to tailor the functional properties of a component. Problems are not only the lack of local material design tools, but also a suitable manufacturing process. The implementation of the concept of local composition control into the Solid Freeform Fabrication (SFF) process 3D-Printing is described, which leads to geometrical complex parts out of tailored materials. Suspensions of different functional inks containing a binder and carbon black nano-particles are dispensed into droplets through multiple jets – like inkjet printing a halftone image on a paper – but into a metal powder bed to generate layer by layer graded green parts. In this case the tailored preforms are then sintered, while the nano-particle additions from the functional ink act locally as alloying elements in the steel matrix to combine e.g. both, toughness and hardness in the part. This work concentrates on the realisation of the new process and shows first results taking the generation of carbon-graded steel parts as an example.

Ferroelectric Properties of HZO Ferroelectric Capacitors with Various Capping Electrodes and Annealing Conditions

2021 ◽  
Vol MA2021-02 (12) ◽  
pp. 612-612
Author(s):  
Jing-Wei Lin ◽  
Yan-Kui Liang ◽  
Yu Chen ◽  
Zhen-hao Li ◽  
Tsung-Che Chiang ◽  
...  
Keyword(s):  
Ferroelectric Properties ◽  
Annealing Conditions ◽  
Ferroelectric Capacitors

A dithering algorithm for local composition control with three-dimensional printing

2003 ◽  
Vol 35 (9) ◽  
pp. 851-867 ◽  
Author(s):  
Wonjoon Cho ◽  
Emanuel M. Sachs ◽  
Nicholas M. Patrikalakis ◽  
Donald E. Troxel
Keyword(s):  
Three Dimensional ◽  
Local Composition ◽  
Three Dimensional Printing ◽  
Composition Control ◽  
Dimensional Printing

Cell Sensing Margin of Lead-Free (Bi,La)4Ti3O12Thin Film Deposited on MTP Cell Structure in High Density FeRAM Device

2006 ◽  
Vol 510-511 ◽  
pp. 530-533
Author(s):  
J.H. Choi ◽  
H.S. Yoo ◽  
K.W. Cho ◽  
N.K. Kim ◽  
S.H. Oh ◽  
...  
Keyword(s):  
Data Storage ◽  
Bottom Electrode ◽  
Operating Temperature ◽  
Cell Structure ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Lead Free ◽  
Average Cell ◽  
Ferroelectric Capacitors ◽  
Device Operation

A 16Mb 1-transistor /1-capacitor (1T1C) FeRAM device was fabricated with lead-free Bi3.25La0.75Ti3.0O12 (BLT) capacitors. The key integration processes contain a scalable MTP (Merged Top-electrode and Plate-line) cell structure and reliable BLT ferroelectric capacitors. Ferroelectric properties of BLT films were optimized on the newly developed MTP cell structure. BLT films were coated on Pt/IrOx/Ir bottom electrode using sol-gel solutions. The composition of the optimized BLT film was about Bi3.25La0.75Ti3.0O12. The switchable polarization obtained in a 100nm-thick BLT film was about 20 µC/cm2 at the 3 V applied voltage, and the optimized BLT film showed a few fatigue losses about 10% up to 1 × 1011 cycles. The imprint properties of the BLT film were also characterized at 25°C and 90°C operating temperature after 125°C data storage. The average cell signal sensing margin between data "1" and data "0" was measured to be about 900 mV, which is a sufficiently large margin for device operation.

The Role of Precursor Chemistry in the Ferroelectric Properties of Donor Doped Pb(Zr,Ti)O3 Thin Films

1998 ◽  
Vol 541 ◽  
Author(s):  
Laura Fè ◽  
B. Malič ◽  
G. Norga ◽  
M. Kosec ◽  
D. J. Wouters ◽  
...  
Keyword(s):  
Thin Films ◽  
Lead Acetate ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Precursor Chemistry ◽  
Film Properties ◽  
Acetate Lead ◽  
Rectangular Hysteresis Loop ◽  
Ferroelectric Capacitors

AbstractModified sol-gel processes have been developed for the preparation of precursor solutions of undoped, La and Ta doped PZT (25/75). These processes use different solvents (methoxyethanol, butoxyethanol) and different lead sources (lead acetate, lead oxide). Due to variations in the structure and in the composition of the solutions, significantly different thermal decomposition behaviors were found. These inevitably affected texture and microstructure of the sol-gel derived thin films, demonstrating the important role of precursor chemistry in the improvement of film properties. In the case of tantalum doped Pt/PZT/Pt ferroelectric capacitors a rectangular hysteresis loop, featuring high Pr, was obtained for one specific precursor chemistry.

scholarly journals Organic and inorganic–organic thin film structures by molecular layer deposition: A review

2014 ◽  
Vol 5 ◽  
pp. 1104-1136 ◽  
Author(s):  
Pia Sundberg ◽  
Maarit Karppinen
Keyword(s):  
Thin Films ◽  
Hybrid Materials ◽  
Molecular Layer ◽  
Three Dimensional ◽  
Atomic Layer ◽  
Great Promise ◽  
Organic Thin Film ◽  
Molecular Layer Deposition ◽  
Composition Control ◽  
Layer Deposition

The possibility to deposit purely organic and hybrid inorganic–organic materials in a way parallel to the state-of-the-art gas-phase deposition method of inorganic thin films, i.e., atomic layer deposition (ALD), is currently experiencing a strongly growing interest. Like ALD in case of the inorganics, the emerging molecular layer deposition (MLD) technique for organic constituents can be employed to fabricate high-quality thin films and coatings with thickness and composition control on the molecular scale, even on complex three-dimensional structures. Moreover, by combining the two techniques, ALD and MLD, fundamentally new types of inorganic–organic hybrid materials can be produced. In this review article, we first describe the basic concepts regarding the MLD and ALD/MLD processes, followed by a comprehensive review of the various precursors and precursor pairs so far employed in these processes. Finally, we discuss the first proof-of-concept experiments in which the newly developed MLD and ALD/MLD processes are exploited to fabricate novel multilayer and nanostructure architectures by combining different inorganic, organic and hybrid material layers into on-demand designed mixtures, superlattices and nanolaminates, and employing new innovative nanotemplates or post-deposition treatments to, e.g., selectively decompose parts of the structure. Such layer-engineered and/or nanostructured hybrid materials with exciting combinations of functional properties hold great promise for high-end technological applications.

scholarly journals Fabrication and investigation of three-dimensional ferroelectric capacitors for the application of FeRAM

AIP Advances ◽  
2016 ◽  
Vol 6 (3) ◽  
pp. 035128 ◽  
Author(s):  
Chia-Pin Yeh ◽  
Marco Lisker ◽  
Bodo Kalkofen ◽  
Edmund P. Burte
Keyword(s):  
Three Dimensional ◽  
Ferroelectric Capacitors

Bismuth composition control of SrBi2TaNbO9 thin films by heat treating Bi2O3-inserted heterostructure

1999 ◽  
Vol 14 (7) ◽  
pp. 2986-2992 ◽  
Author(s):  
Yoon-Baek Park ◽  
Jeon-Kook Lee ◽  
Hyung-Jin Jung ◽  
Jong-Wan Park
Keyword(s):  
Thin Films ◽  
Leakage Current ◽  
Leakage Current Density ◽  
Current Density ◽  
Ferroelectric Properties ◽  
Stoichiometric Composition ◽  
Heat Treating ◽  
The Other ◽  
Composition Control ◽  
Other Hand

Ferroelectric properties of SrBi2TaNbO9 (SBTN) thin films were changed by the amount of Bi content in SBTN. We proposed that the addition of excess Bi to the SBTN thin films could be accomplished by heat treating the SBTN/Bi2O3/SBTN heterostructure fabricated by the radio frequency magnetron sputtering method. The Bi composition was controlled by changing the thickness of the inserted Bi2O3 from 50 to 400Å in the SBTN/Bi2O3/SBTN heterostructure. As the thickness of Bi2O3 films was increased from 0 to 100 Å, the grain grew faster and the ferroelectric properties improved. On the other hand, when the thickness, of Bi2O3 films was thicker than 150 Å, the ferroelectric properties deteriorated. In particular, when a 400 Å Bi2O3 layer was inserted between SBTN films, a Bi2Pt phase appeared and the Bi2O3 films remained between SBTN films, resulting in poor ferroelectric properties. A Bi2Pt phase was formed by the reaction between the platinum bottom electrode and Bi2O3 films. On the other hand, the leakage current density of SBTN thin films decreased with the increase of inserted Bi2O3 film thickness. As the thickness of inserted Bi2O3 films was increased from 0 to 50 Å, leakage current density abruptly decreased because Bi content of the SBTN thin films was increased from 8 mol% deficient to stoichiometric composition. As the thickness of inserted Bi2O3 films increased from 100 to 400 Å, leakage current density gradually decreased because the remaining Bi2O3 layer in SBTN thin films increased.

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