Healing of Surface States and Point Defects in Single-Crystalline  -Ga2O3 Epilayer

2012 ◽  
Vol 45 (7) ◽  
pp. 79-84 ◽  
Author(s):  
P. Ravadgar ◽  
R.-H. Horng ◽  
T. Y. Wang
Keyword(s):  
Point Defects ◽  
Surface States ◽  
Single Crystalline

Intrinsic and extrinsic surface states of single crystalline SrTiO3

1998 ◽  
Vol 84 (4) ◽  
pp. 2123-2126 ◽  
Author(s):  
Yuji Adachi ◽  
Shigemi Kohiki ◽  
Kazuaki Wagatsuma ◽  
Masaoki Oku
Keyword(s):  
Surface States ◽  
Single Crystalline

scholarly journals Dislocations and point defects in neutron irradiated single crystalline Mo at elevated temperatures

2011 ◽  
Vol 325 ◽  
pp. 012017
Author(s):  
O A Lambri ◽  
G J Cuello ◽  
G I Zelada-Lambri ◽  
P B Bozzano ◽  
J A García
Keyword(s):  
Point Defects ◽  
Elevated Temperatures ◽  
Single Crystalline

Estimating the range of influence of point defects on Cu (110) surface states

2011 ◽  
Vol 83 (15) ◽  
Author(s):  
G. E. Isted ◽  
P. D. Lane ◽  
R. J. Cole ◽  
M. Caffio ◽  
R. Schaub
Keyword(s):  
Point Defects ◽  
Surface States ◽  
Range Of Influence

scholarly journals The model case of an oxygen storage catalyst – non-stoichiometry, point defects and electrical conductivity of single crystalline CeO2–ZrO2–Y2O3 solid solutions

2014 ◽  
Vol 16 (46) ◽  
pp. 25583-25600 ◽  
Author(s):  
Jens-Peter Eufinger ◽  
Maximilian Daniels ◽  
Kerstin Schmale ◽  
Stefan Berendts ◽  
Gregor Ulbrich ◽  
...  
Keyword(s):  
Electrical Conductivity ◽  
Solid Solutions ◽  
Point Defects ◽  
Defect Chemistry ◽  
Oxygen Storage ◽  
Defect Model ◽  
Model Case ◽  
Single Crystalline ◽  
Storage Catalyst

Defect-chemistry of the oxygen storage compound CeO2–ZrO2–Y2O3 has been investigated with conductivity, EMF and non-stoichiometry measurements and the observed non-ideality was described by an unconventional defect-model.

scholarly journals Quantitative analysis of electrically active defects in Au/AlGaN/GaN HEMTs structure using capacitance–frequency and DLTS measurements

2021 ◽  
Author(s):  
Nargis Bano ◽  
Ijaz Hussain ◽  
Eman Al-Ghamdi ◽  
M. Saeed Ahmad
Keyword(s):  
Time Constant ◽  
Point Defects ◽  
Deep Level ◽  
Surface States ◽  
High Electron Mobility Transistor ◽  
Interface States ◽  
Electron Trap ◽  
Nitrogen Vacancy ◽  
High Electron ◽  
Trap States

Abstract Electrical trap states in the AlGaN-based high-electron-mobility transistor (HEMT) structures limit the performances of devices. In this study, we present a comprehensive study of the electrical trap states in AlGaN/GaN HEMT structures and examine their influence on the device performance. We performed capacitance–frequency and conductance–frequency measurements to determine the time constant and the density of the interface states. The density of the interface states was calculated to be 2 × 1010 cm−2 eV−1, and the time constant of the interface states was 1 μs. Deep-level transient spectroscopy showed the presence of one electron trap E1 (negative peak) and three hole-like traps P1, P2, and P3 (positive peaks). The thermal activation energies for E1, P1, P2, and P3 traps were calculated to be 1.19, 0.64, 0.95, and 1.32 eV, respectively. The electron trap E1 and the hole-like traps P1, P2 and P3 were observed to originate from the point defects or their complexes in the material. The hole-like traps reflected the changes created in the population of the surface states owing to the capture of the surface states; these traps originated from the point defects related to the nitrogen vacancy.

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