Bipolar Resistive Switching Memory Characteristics Using Al/Cu/GeOx/W Memristor

2012 ◽  
Vol 45 (6) ◽  
pp. 257-261 ◽  
Author(s):  
S. Maikap ◽  
S. Z. Rahaman
Keyword(s):  
Resistive Switching ◽  
Bipolar Resistive Switching ◽  
Resistive Switching Memory ◽  
Memory Characteristics ◽  
Switching Memory

Improved Bipolar Resistive Switching Memory Using W/TaOx/W Structure

2010 ◽  
Vol 159 ◽  
pp. 333-337 ◽  
Author(s):  
Amit Prakash ◽  
Siddheswar Maikap ◽  
H.Y. Lee ◽  
G. Chen ◽  
F. Chen ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Conduction Mechanism ◽  
Memory Device ◽  
Data Retention ◽  
Bipolar Resistive Switching ◽  
Resistive Switching Memory ◽  
Good Memory ◽  
Current Conduction ◽  
Memory Characteristics ◽  
Switching Memory

Resistive switching memory characteristics of high- TaOx film in a W/TaOx/W structure have been investigated and compared with Al/TaOx/W structure. Amorphous TaOx film with a thickness of 6.8 nm was confirmed by HRTEM image and EDX analysis. The switching in Al/TaOx/W structure is found to be unstable with large variations in set and reset voltages. The memory device in W/TaOx/W structure shows good memory characteristics with a low power of ~500µAx1.6V. The current conduction mechanism is fitted to Ohmic and SCLC in LRS and HRS, respectively. The memory device has shown good endurance characteristics of >5x103 cycles and good data retention with a stable HRS/LRS.

Self-rectifying bipolar resistive switching memory based on an iron oxide and graphene oxide hybrid

Nanoscale ◽  
2017 ◽  
Vol 9 (40) ◽  
pp. 15314-15322 ◽  
Author(s):  
Se-I Oh ◽  
Janardhanan R. Rani ◽  
Sung-Min Hong ◽  
Jae-Hyung Jang
Keyword(s):  
Graphene Oxide ◽  
Iron Oxide ◽  
Resistive Switching ◽  
Bipolar Resistive Switching ◽  
Solution Processed ◽  
Resistive Switching Memory ◽  
Switching Memory

A solution-processed FeOx–GO hybrid based RRAM device with excellent self-rectifying characteristics (ILRS/IR > 104) is presented.

Effects of ZrO2 doping on HfO2 resistive switching memory characteristics

2014 ◽  
Vol 105 (7) ◽  
pp. 072102 ◽  
Author(s):  
Seung Wook Ryu ◽  
Seongjae Cho ◽  
Joonsuk Park ◽  
Jungsuk Kwac ◽  
Hyeong Joon Kim ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Resistive Switching Memory ◽  
Memory Characteristics ◽  
Switching Memory

scholarly journals Enhanced resistive switching memory characteristics and mechanism using a Ti nanolayer at the W/TaOx interface

2014 ◽  
Vol 9 (1) ◽  
pp. 125 ◽  
Author(s):  
Amit Prakash ◽  
Siddheswar Maikap ◽  
Hsien-Chin Chiu ◽  
Ta-Chang Tien ◽  
Chao-Sung Lai
Keyword(s):  
Resistive Switching ◽  
Resistive Switching Memory ◽  
Ti Nanolayer ◽  
Memory Characteristics ◽  
Switching Memory

Influence of the voltage window on resistive switching memory characteristics based on g-C3N4 device

2018 ◽  
Vol 44 (15) ◽  
pp. 18108-18112 ◽  
Author(s):  
Xiaojun Wang ◽  
Bai Sun ◽  
Xiaoxia Li ◽  
Bolin Guo ◽  
Yushuang Zeng ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Resistive Switching Memory ◽  
Memory Characteristics ◽  
Switching Memory

scholarly journals Retraction: Enhanced resistive switching memory characteristics and mechanism using a Ti nanolayer at the W/TaOx interface

2013 ◽  
Vol 8 (1) ◽  
pp. 419 ◽  
Author(s):  
Amit Prakash ◽  
Siddheswar Maikap ◽  
Hsien-Chin Chiu ◽  
Ta-Chang Tien ◽  
Chao-Sung Lai
Keyword(s):  
Resistive Switching ◽  
Resistive Switching Memory ◽  
Ti Nanolayer ◽  
Memory Characteristics ◽  
Switching Memory
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