Device Characteristics of In Situ CCVD Grown Bilayer Graphene FETs at Elevated Temperatures
1989 ◽
Vol 47
◽
pp. 652-653
1990 ◽
Vol 48
(4)
◽
pp. 530-531
Keyword(s):
1991 ◽
Vol 159
(1)
◽
pp. 473-487
◽
Keyword(s):
1988 ◽
Vol 33
(3)
◽
pp. 871-874
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