Effect of De-ionized Water Rinse in AlCu Line Post Etch Asher Residue Removal Process Using Fluoride Containing Stripper

2019 ◽  
Vol 44 (1) ◽  
pp. 319-323
Author(s):  
Victor Luo ◽  
Jason Chang ◽  
Kevin Shi ◽  
James Pang ◽  
Justin Ni ◽  
...  
Keyword(s):  
Residue Removal ◽  
Removal Process ◽  
Water Rinse

A Study on the Cause and Improvement Method of Aluminum PAD Disappearance Defect in TSV Package Process

2017 ◽  
Author(s):  
Boem-Su Kim ◽  
Su Hyeon Park ◽  
Hyoung Ryeun Kim ◽  
Sung Min Hwang
Keyword(s):  
Chemical Analysis ◽  
Failure Mode ◽  
Process Simulation ◽  
Through Silicon Via ◽  
Residue Removal ◽  
Metal Residue ◽  
Removal Process ◽  
Improvement Method ◽  
Wet Chemical

Abstract Through Silicon Via (TSV) Package (PKG) technology that forms a 3D stack with chip to chip or wafer to wafer contact, uses a variety of wet chemicals unlike conventional package technology. Therefore, new kinds of defects related to the wet chemical occur. In this a new failure mode of disappeared Al pad will be presented, a problem came up to disappear Al pad, which served as the fiducial key during the metal residue removal process after forming the TSV PKG front bump, the mechanism of disappearance of Al pad was investigated. Through chemical analysis of process and equipment, we found that Cu etchant (including H3PO4) can damage for Al pad. The process simulation demonstrated that Al pad actually disappeared. Therefore, it confirmed that it needs to be removed through sufficient rinsing time after applying the wet chemical applied to the TSV PKG process. As a result we solved problem through modified equipment and increased rinsing time.

A Novel Resist and Post-Etch Residue Removal Process Using Ozonated Chemistry

1998 ◽  
Vol 65-66 ◽  
pp. 165-168 ◽  
Author(s):  
Stefan De Gendt ◽  
P. Snee ◽  
I. Cornelissen ◽  
Marcel Lux ◽  
Rita Vos ◽  
...  
Keyword(s):  
Residue Removal ◽  
Removal Process ◽  
Etch Residue
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