Enhancement of a Channel Strain via Dry Oxidation of Recessed Source/Drain Si1−xGex Structures

2019 ◽  
Vol 41 (7) ◽  
pp. 175-180 ◽  
Author(s):  
Sun-Wook Kim ◽  
Jung-Ho Yoo ◽  
Sang-mo Koo ◽  
Dae-Hong Ko ◽  
Hoo-Jeong Lee
Keyword(s):  
Dry Oxidation

Reduction in the Density of Interface States at the SiO2/4H-SiC Interface after Dry Oxidation in the Presence of Potassium

2011 ◽  
Vol 679-680 ◽  
pp. 334-337 ◽  
Author(s):  
Pétur Gordon Hermannsson ◽  
Einar Ö. Sveinbjörnsson
Keyword(s):  
Energy Distribution ◽  
Oxidation Rate ◽  
Alkali Metals ◽  
Interface States ◽  
Significant Enhancement ◽  
Interface Traps ◽  
Strong Reduction ◽  
Dry Oxidation ◽  
Density Of Interface States

We report a strong reduction in the density of near-interface traps (NITs) at the SiO2/4H-SiC interface after dry oxidation in the presence of potassium. This is accompanied by a significant enhancement of the oxidation rate. The results are in line with recent investigations of the effect of sodium on oxidation of 4H-SiC. It is evident that both alkali metals enhance the oxidation rate of SiC and strongly influence the energy distribution of interface states.

Microwave-assisted dry oxidation of 3-trialkylsilyl(germyl)prop-2-yn-1-ols to propynals and the direct conversion of acetylenic alcohols to ynimines and enynes

2005 ◽  
Vol 15 (6) ◽  
pp. 263-265 ◽  
Author(s):  
Alexander V. Mareev ◽  
Alevtina S. Medvedeva ◽  
Alexander V. Khatashkeev ◽  
Andrey V. Afonin
Keyword(s):  
Direct Conversion ◽  
Microwave Assisted ◽  
Dry Oxidation

Passivation and Depassivation of Interface Traps at the SiO2/4H-SiC Interface by Potassium Ions

2012 ◽  
Vol 717-720 ◽  
pp. 761-764 ◽  
Author(s):  
Pétur Gordon Hermannsson ◽  
Einar Ö. Sveinbjörnsson
Keyword(s):  
Thermal Stability ◽  
Conduction Band ◽  
Energy Levels ◽  
Sample Surface ◽  
Conduction Band Edge ◽  
Potassium Ions ◽  
Interface Traps ◽  
Bias Stress ◽  
Dry Oxidation ◽  
Thermal Stability Of

We investigate the passivation of interface traps by method of oxidizing Si-face 4H-SiC in the presence of potassium as well as examining the thermal stability of this passivation process. It is observed that this type of dry oxidation leads to a strong passivation of interface traps at the SiO2/4H-SiC interface with energy levels near the SiC conduction band edge. Furthermore, it is observed that if potassium ions residing at the SiO2/SiC interface are moved towards the sample surface by exposing them to ultraviolet light (UV) under an applied depletion bias stress at high temperatures the interface traps become electrically active again and are evidently depassivated. These findings are in line with recently a published model of the effect of sodium on such interface states

Fabrication of Ge On Insulator By Ion-Implantation And Dry Oxidation Techniques

2012 ◽  
Vol 18 (S2) ◽  
pp. 1634-1635
Author(s):  
T. Kim ◽  
D.J. Llewellyn ◽  
K. Belay ◽  
R. Elliman ◽  
D. Choi ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Dry Oxidation

Extended abstract of a paper presented at Microscopy and Microanalysis 2012 in Phoenix, Arizona, USA, July 29 – August 2, 2012.

Gettering Processes for Sub-Micron VLSI

1986 ◽  
Vol 76 ◽  
Author(s):  
John Andrews
Keyword(s):  
Defect Density ◽  
Back Surface ◽  
Dislocation Network ◽  
Published Data ◽  
Interstitial Oxygen ◽  
Supersaturation Ratio ◽  
Zone Formation ◽  
Wide Range ◽  
Dry Oxidation ◽  
P Diffusion

ABSTRACTGettering by the dislocation network caused by P-diffusion into the back surface of Si wafers at 950° C for 1 hr. is often used for VLSI. However, transistors with sub-micron gates are jeopardized at 950°C because of possible source-drain punch through by lateral P-diffusion. The temperature dependence of gettering by P-diffusion has been investigated at 950, 900, and 850°C. Gettering by P-diffusion was found to be marginal at 900°C and totally ineffective at 850°C.Recently published data on the solubility and diffusivity of interstitial oxygen in Czochralski-grown Si has been used to develop a simple out-diffusion model for denuded zone formation during thermal oxidation. Comparison with experimental observations on samples with high interstitial SiO2 concentration [Oi]0, exposed to dry oxidation at 1100° C for various times up to 8 hrs. and followed by 24 hr. anneals in N2 at 700°C and 1050°C, reveal that SiO2 precipitation occurs when the supersaturation ratio exceeds 4.7. The model implies an optimum denuding temperature near 100° C for a dry oxidation time of 4 hrs. The bulk defect density was also observed to decrease more than a factor of 5 as the denuding time was increased from 0 to 8 hrs.Intrinsic gettering by SiO2 precipitates in Czochralski-grown silicon has been evaluated over a wide range of initial interstitial oxygen concentrations 15 < [Oi]0 < 22 ppma with and without a HI-LO-HI pre-process annealing cycle. Among samples of approximately 100 p-n junctions per wafer, reductions of 1–3 orders of magnitude in reverse leakage at 5 volts were achieved in the worst 10% of 500 μm square devices on wafers that were exposed to the HI-LO-HI heat treatment. Intrinsic gettering is most effective when [Oi]0 22 ppma, but leakage reduction among the worst diodes is achieved at the expense of a 2 or 3-fold increase in median leakage.

Case Studies in Dry Oxidation

2019 ◽  
pp. 421-430
Author(s):  
David R.H. Jones ◽  
Michael F. Ashby
Keyword(s):  
Case Studies ◽  
Dry Oxidation

Achievement of a high channel strain via dry oxidation of recessed source/drain Si1−xGex structures

2011 ◽  
Vol 98 (13) ◽  
pp. 133121 ◽  
Author(s):  
J.-H. Yoo ◽  
S.-W. Kim ◽  
S.-M. Koo ◽  
D.-H. Ko ◽  
H.-J. Lee
Keyword(s):  
Dry Oxidation

Point Defect Injection Kinetics by N2O Oxidation of Silicon

1997 ◽  
Vol 469 ◽  
Author(s):  
C. Tsamis ◽  
D. N. Kouvatsos ◽  
D. Tsoukalas
Keyword(s):  
Point Defect ◽  
High Temperatures ◽  
Point Defects ◽  
Silicon Substrate ◽  
Oxidation Process ◽  
Stacking Faults ◽  
Defect Injection ◽  
Dry Oxidation ◽  
Kinetics Of

ABSTRACTThe influence of N2O oxidation of silicon on the kinetics of point defects at high temperatures is investigated. Oxidation Stacking Faults (OSF) are used to monitor the interstitials that are generated during the oxidation process. We show that at high temperatures (1050°-1150°C) the supersaturation of self-interstitials in the silicon substrate is enhanced when oxidation is performed in an N2O ambient compared to 100% dry oxidation. This behavior is attributed to the presence of nitrogen at the oxidizing interface. However, at lower temperatures this phenomenon is reversed and oxidation in N2O ambient leads to reduced supersaturation ratios.

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