Effect of the Electrode Material on the Electrical-Switching Characteristics of Nonvolatile Memory Devices Based on Poly($o$-anthranilic acid) Thin Films

2008 ◽  
Vol 29 (7) ◽  
pp. 694-697 ◽  
Author(s):  
Dongjin Lee ◽  
Sungsik Baek ◽  
Moonhor Ree ◽  
Ohyun Kim
Keyword(s):  
Thin Films ◽  
Electrode Material ◽  
Anthranilic Acid ◽  
Nonvolatile Memory ◽  
Memory Devices ◽  
Electrical Switching ◽  
Nonvolatile Memory Devices ◽  
Switching Characteristics

Effect of Top Electrode Material on Resistive Switching Characteristics in MnO2 Nonvolatile Memory Devices

2019 ◽  
Vol 41 (3) ◽  
pp. 475-482 ◽  
Author(s):  
Yu-Ting Tsai ◽  
Ting-Chang Chang ◽  
Chao-Cheng Lin ◽  
Lan-Shin Chiang ◽  
Shih-Cheng Chen ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Electrode Material ◽  
Nonvolatile Memory ◽  
Memory Devices ◽  
Nonvolatile Memory Devices ◽  
Switching Characteristics

Effect of Electrode Material on Resistive Switching Characteristics in TaON Nonvolatile Memory Devices

2013 ◽  
Vol 53 (29) ◽  
pp. 1-7
Author(s):  
M.-C. Chen ◽  
T.-C. Chang ◽  
Y.-C. Chiu ◽  
S.-C. Chen ◽  
S.-Y. Huang ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Electrode Material ◽  
Nonvolatile Memory ◽  
Memory Devices ◽  
Nonvolatile Memory Devices ◽  
Switching Characteristics
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