(Invited) Effect of Threshold-Voltage Instability on SiC Power MOSFET High-Temperature Reliability

2019 ◽  
Vol 41 (8) ◽  
pp. 203-214 ◽  
Author(s):  
Aivars Lelis ◽  
Ronald Green ◽  
Daniel Habersat
Keyword(s):  
High Temperature ◽  
Threshold Voltage ◽  
Power Mosfet ◽  
Voltage Instability

Reduced Poly-Si TFT Threshold Voltage Instability by High-Temperature Hydrogenation of a-Si-Like Spin Centers

1995 ◽  
Author(s):  
Yoshiaki Kamigaki ◽  
Takashi Hashimoto ◽  
Masaaki Aoki ◽  
Ken'etsu Yokogawa ◽  
Masahiro Moniwa ◽  
...  
Keyword(s):  
High Temperature ◽  
Threshold Voltage ◽  
Voltage Instability

Characteristics and aging of SiC MOSFETs operated at very high temperatures

2014 ◽  
Vol 1693 ◽  
Author(s):  
Dean P. Hamilton ◽  
Michael R. Jennings ◽  
Craig A. Fisher ◽  
Yogesh K. Sharma ◽  
Stephen J. York ◽  
...  
Keyword(s):  
High Temperature ◽  
High Temperatures ◽  
Threshold Voltage ◽  
Thermal Aging ◽  
Ohmic Contacts ◽  
Stress Tests ◽  
Temperature Capability ◽  
Temperature Constant ◽  
Voltage Management ◽  
Very High

ABSTRACTSilicon carbide power devices are purported to be capable of operating at very high temperatures. Current commercially available SiC MOSFETs from a number of manufacturers have been evaluated to understand and quantify the aging processes and temperature dependencies that occur when operated up to 350°C. High temperature constant positive bias stress tests demonstrated a two times increase in threshold voltage from the original value for some device types, which was maintained indefinitely but could be corrected with a long negative gate bias. The threshold voltages were found to decrease close to zero and the on-state resistances increased quite linearly to approximately five or six times their room temperature values. Long term thermal aging of the dies appears to demonstrate possible degradation of the ohmic contacts. This appears as a rectifying response in the I-V curves at low drain-source bias. The high temperature capability of the latest generations of these devices has been proven independently; provided that threshold voltage management is implemented, the devices are capable of being operated and are free from the effects of thermal aging for at least 70 hours cumulative at 300°C.

The Effects of Double-Epilayer Structure on Threshold Voltage of Ultralow Voltage Trench Power MOSFET Devices

2007 ◽  
Vol 54 (4) ◽  
pp. 833-839 ◽  
Author(s):  
Qi Wang ◽  
Minhua Li ◽  
Joelle Sharp ◽  
Ashok Challa
Keyword(s):  
Threshold Voltage ◽  
Power Mosfet
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