The Effects of Double-Epilayer Structure on Threshold Voltage of Ultralow Voltage Trench Power MOSFET Devices

2007 ◽  
Vol 54 (4) ◽  
pp. 833-839 ◽  
Author(s):  
Qi Wang ◽  
Minhua Li ◽  
Joelle Sharp ◽  
Ashok Challa
Keyword(s):  
Threshold Voltage ◽  
Power Mosfet

(Invited) Effect of Threshold-Voltage Instability on SiC Power MOSFET High-Temperature Reliability

2019 ◽  
Vol 41 (8) ◽  
pp. 203-214 ◽  
Author(s):  
Aivars Lelis ◽  
Ronald Green ◽  
Daniel Habersat
Keyword(s):  
High Temperature ◽  
Threshold Voltage ◽  
Power Mosfet ◽  
Voltage Instability

Power MOSFET Devices and ESD Reliability Evaluations

2012 ◽  
Vol 268-270 ◽  
pp. 1361-1364
Author(s):  
Shen Li Chen ◽  
Wen Ming Lee
Keyword(s):  
Threshold Voltage ◽  
Electron Mobility ◽  
Electrostatic Discharge ◽  
Gate Oxide ◽  
Experimental Results ◽  
Power Mosfet ◽  
Power Mosfets ◽  
Protection Strategy ◽  
Esd Protection ◽  
Protection Circuit

The electrostatic discharge (ESD) reliabilities in different power MOSFETs will be investigated in this paper. From the experimental results, ESD zap pulses at the gate terminal will cause electrons or holes trap in the gate oxide and loss the Si-SiO2 interface integrity, especially for the 100V nDEMOS, 200V nDEMOS, and IRF640, in which they do not have any ESD protection strategy. Electrons or holes trapped in the gate SiO2 layer will be caused the transconductance (Gm) or threshold voltage (Vth) of a MOSFET increasing or reduction, and which is resulted from electron mobility degradation. The RFW2N06RLE and RLD03N06CLE power VDMOS ICs, which with different kinds of ESD protection circuit, are less influenced by ESD pulses experimentally.

Electrical Characterization of Commercial Power MOSFET Under Electron Radiation

2017 ◽  
Vol 8 (2) ◽  
pp. 462
Author(s):  
Wan Nurhasana binti Wan Ayub ◽  
Nurul Fadzlin Hasbullah ◽  
Abdul Wafi Rashid
Keyword(s):  
Dose Level ◽  
Electron Irradiation ◽  
Threshold Voltage ◽  
Electrical Characterization ◽  
Electron Radiation ◽  
Power Mosfet ◽  
Before And After ◽  
Radiation Induced ◽  
Oxide Traps

<p>This paper presents the threshold voltage shifts for both p-channel and n-channel commercial power MOSFET before and after electron irradiation. The experiment was done under the 3MeV energy of electron with dose level varies from 50KGy until 250KGy. The results were plotted and analyzed in terms of the shifted voltage characteristics. It is observed that after irradiation, both p-channel and n-channel MOSFET experiences negative threshold voltage shifts. For n-channel devices, this is due to the radiation-induced positive charges dominated in the oxide traps while for p-channel devices it is believed due to radiation-induced ionization damage.</p>

Phosphorous-outgassing-induced threshold voltage in p-channel power MOSFET devices

1998 ◽  
Author(s):  
Fuyu Lin ◽  
Richard De Souza ◽  
Richard Dynes ◽  
Shifeng Lu ◽  
Pat Schay ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Channel Power ◽  
Power Mosfet
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