Reduced poly-Si TFT threshold voltage instability by high-temperature hydrogenation of a-Si-like spin centers

1995 ◽  
Author(s):  
Y. Kamigaki ◽  
T. Hashimoto ◽  
M. Aoki ◽  
K. Yokogawa ◽  
M. Moniwa ◽  
...  
Keyword(s):  
High Temperature ◽  
Threshold Voltage ◽  
Voltage Instability

(Invited) Effect of Threshold-Voltage Instability on SiC Power MOSFET High-Temperature Reliability

2019 ◽  
Vol 41 (8) ◽  
pp. 203-214 ◽  
Author(s):  
Aivars Lelis ◽  
Ronald Green ◽  
Daniel Habersat
Keyword(s):  
High Temperature ◽  
Threshold Voltage ◽  
Power Mosfet ◽  
Voltage Instability

Reduced Poly-Si TFT Threshold Voltage Instability by High-Temperature Hydrogenation of a-Si-Like Spin Centers

1995 ◽  
Author(s):  
Yoshiaki Kamigaki ◽  
Takashi Hashimoto ◽  
Masaaki Aoki ◽  
Ken'etsu Yokogawa ◽  
Masahiro Moniwa ◽  
...  
Keyword(s):  
High Temperature ◽  
Threshold Voltage ◽  
Voltage Instability

Characteristics and aging of SiC MOSFETs operated at very high temperatures

2014 ◽  
Vol 1693 ◽  
Author(s):  
Dean P. Hamilton ◽  
Michael R. Jennings ◽  
Craig A. Fisher ◽  
Yogesh K. Sharma ◽  
Stephen J. York ◽  
...  
Keyword(s):  
High Temperature ◽  
High Temperatures ◽  
Threshold Voltage ◽  
Thermal Aging ◽  
Ohmic Contacts ◽  
Stress Tests ◽  
Temperature Capability ◽  
Temperature Constant ◽  
Voltage Management ◽  
Very High

ABSTRACTSilicon carbide power devices are purported to be capable of operating at very high temperatures. Current commercially available SiC MOSFETs from a number of manufacturers have been evaluated to understand and quantify the aging processes and temperature dependencies that occur when operated up to 350°C. High temperature constant positive bias stress tests demonstrated a two times increase in threshold voltage from the original value for some device types, which was maintained indefinitely but could be corrected with a long negative gate bias. The threshold voltages were found to decrease close to zero and the on-state resistances increased quite linearly to approximately five or six times their room temperature values. Long term thermal aging of the dies appears to demonstrate possible degradation of the ohmic contacts. This appears as a rectifying response in the I-V curves at low drain-source bias. The high temperature capability of the latest generations of these devices has been proven independently; provided that threshold voltage management is implemented, the devices are capable of being operated and are free from the effects of thermal aging for at least 70 hours cumulative at 300°C.

1700V, 5.5mOhm-cm2 4H-SiC DMOSFET with Stable 225°C Operation

2014 ◽  
Vol 778-780 ◽  
pp. 903-906 ◽  
Author(s):  
Kevin Matocha ◽  
Kiran Chatty ◽  
Sujit Banerjee ◽  
Larry B. Rowland
Keyword(s):  
High Temperature ◽  
Temperature Stress ◽  
High Temperatures ◽  
Threshold Voltage ◽  
Room Temperature ◽  
Gate Bias ◽  
Threshold Voltage Shift ◽  
Device Reliability ◽  
Bias Temperature Stress ◽  
High Temperature Operation

We report a 1700V, 5.5mΩ-cm24H-SiC DMOSFET capable of 225°C operation. The specific on-resistance of the DMOSFET designed for 1200V applications is 8.8mΩ-cm2at 225°C, an increase of only 60% compared to the room temperature value. The low specific on-resistance at high temperatures enables a smaller die size for high temperature operation. Under a negative gate bias temperature stress (BTS) at VGS=-15 V at 225°C for 20 minutes, the devices show a threshold voltage shift of ΔVTH=-0.25 V demonstrating one of the key device reliability requirements for high temperature operation.

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