Electric Field Driven Degradation of AlGaN/GaN High Electron Mobility Transistors during Off-State Stress

C. Y. Chang; Erica Douglas; Jinhyung Kim; Lu Liu; Chien-Fong Lo; Byung-Hwan Chu; D. J. Cheney; Brent P. Gila; F. Ren; G. D. Via; David A. Cullen; Lin Zhou; David J. Smith; Soohwan Jang; S. J. Pearton

doi:10.1149/1.3629957

Electric Field Driven Degradation of AlGaN/GaN High Electron Mobility Transistors during Off-State Stress

ECS Transactions ◽

10.1149/1.3629957 ◽

2019 ◽

Vol 41 (6) ◽

pp. 89-100

Author(s):

C. Y. Chang ◽

Erica Douglas ◽

Jinhyung Kim ◽

Lu Liu ◽

Chien-Fong Lo ◽

...

Keyword(s):

Electric Field ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

State Stress

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Effect of OFF-state stress induced electric field on trapping in AlGaN/GaN high electron mobility transistors on Si (111)

Applied Physics Letters ◽

10.1063/1.4913841 ◽

2015 ◽

Vol 106 (8) ◽

pp. 083508 ◽

Cited By ~ 13

Author(s):

M. J. Anand ◽

G. I. Ng ◽

S. Arulkumaran ◽

C. M. Manoj Kumar ◽

K. Ranjan ◽

...

Keyword(s):

Electric Field ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

State Stress

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Investigating the effect of off-state stress on trap densities in AlGaN/GaN high electron mobility transistors

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.3660396 ◽

2011 ◽

Vol 29 (6) ◽

pp. 060603 ◽

Cited By ~ 12

Author(s):

L. Liu ◽

F. Ren ◽

S. J. Pearton ◽

R. C. Fitch ◽

D. E. Walker ◽

...

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

State Stress

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Direct observation of trapped charges under field-plate in p-GaN gate AlGaN/GaN high electron mobility transistors by electric field-induced optical second-harmonic generation

Applied Physics Letters ◽

10.1063/1.4977084 ◽

2017 ◽

Vol 110 (9) ◽

pp. 092101 ◽

Cited By ~ 3

Author(s):

Takashi Katsuno ◽

Takaaki Manaka ◽

Narumasa Soejima ◽

Mitsumasa Iwamoto

Keyword(s):

Electric Field ◽

Second Harmonic Generation ◽

Harmonic Generation ◽

Electron Mobility ◽

Second Harmonic ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Field Plate ◽

Electron Mobility Transistors

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Electric field dependence of optical phonon frequencies in wurtzite GaN observed in GaN high electron mobility transistors

Journal of Applied Physics ◽

10.1063/1.4964689 ◽

2016 ◽

Vol 120 (15) ◽

pp. 155104 ◽

Cited By ~ 6

Author(s):

Kevin R. Bagnall ◽

Cyrus E. Dreyer ◽

David Vanderbilt ◽

Evelyn N. Wang

Keyword(s):

Electric Field ◽

Field Dependence ◽

Optical Phonon ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Electric Field Dependence

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Erratum: “The role of electric field-induced strain in the degradation mechanism of AlGaN/GaN high-electron-mobility transistors” [Appl. Phys. Lett. 94, 053501 (2009)]

Applied Physics Letters ◽

10.1063/1.3182628 ◽

2009 ◽

Vol 95 (2) ◽

pp. 029902

Author(s):

C. Rivera ◽

E. Muñoz

Keyword(s):

Electric Field ◽

Electron Mobility ◽

Degradation Mechanism ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Electric Field Induced Strain

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Electric field driven plasmon dispersion in AlGaN/GaN high electron mobility transistors

Chinese Physics B ◽

10.1088/1674-1056/22/11/117306 ◽

2013 ◽

Vol 22 (11) ◽

pp. 117306 ◽

Cited By ~ 5

Author(s):

Ren-Bing Tan ◽

Hua Qin ◽

Xiao-Yu Zhang ◽

Wen Xu

Keyword(s):

Electric Field ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Plasmon Dispersion

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Improved Off-State Stress Critical Voltage on AlGaN/GaN High Electron Mobility Transistors Utilizing Pt/Ti/Au Gate Structure

ECS Meeting Abstracts ◽

10.1149/ma2011-02/31/2082 ◽

2011 ◽

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

Critical Voltage ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Gate Structure ◽

State Stress

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Electric field distribution in AlGaN/GaN high electron mobility transistors investigated by electroluminescence

Applied Physics Letters ◽

10.1063/1.3464959 ◽

2010 ◽

Vol 97 (3) ◽

pp. 033502 ◽

Cited By ~ 10

Author(s):

R. J. T. Simms ◽

F. Gao ◽

Y. Pei ◽

T. Palacios ◽

U. K. Mishra ◽

...

Keyword(s):

Electric Field ◽

Field Distribution ◽

Electron Mobility ◽

Electric Field Distribution ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Improved Off-State Stress Critical Voltage on AlGaN/GaN High Electron Mobility Transistors Utilizing Pt/Ti/Au Based Gate Metallization

ECS Transactions ◽

10.1149/1.3629954 ◽

2019 ◽

Vol 41 (6) ◽

pp. 63-70 ◽

Cited By ~ 1

Author(s):

Chien-Fong Lo ◽

Lu Liu ◽

Tsung-Sheng Kang ◽

Ryan Davies ◽

Brent P. Gila ◽

...

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

Critical Voltage ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

State Stress

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Liquid crystal electrography: Electric field mapping and detection of peak electric field strength in AlGaN/GaN high electron mobility transistors

Microelectronics Reliability ◽

10.1016/j.microrel.2014.01.006 ◽

2014 ◽

Vol 54 (5) ◽

pp. 921-925 ◽

Cited By ~ 1

Author(s):

Janina Möreke ◽

Chris Hodges ◽

Laura L.E. Mears ◽

Michael J. Uren ◽

Robert M. Richardson ◽

...

Keyword(s):

Liquid Crystal ◽

Field Strength ◽

Electric Field ◽

Electric Field Strength ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Peak Electric Field

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