scholarly journals Electric field dependence of optical phonon frequencies in wurtzite GaN observed in GaN high electron mobility transistors

2016 ◽  
Vol 120 (15) ◽  
pp. 155104 ◽  
Author(s):  
Kevin R. Bagnall ◽  
Cyrus E. Dreyer ◽  
David Vanderbilt ◽  
Evelyn N. Wang
Keyword(s):  
Electric Field ◽  
Field Dependence ◽  
Optical Phonon ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Electric Field Dependence

scholarly journals Effect of Electric Field On Electron Mobility in Sub-100 nm InAlN/GaN High Electron Mobility Transistors

2021 ◽  
Author(s):  
Peng Cui ◽  
Yuping Zeng
Keyword(s):  
Electric Field ◽  
Electron Mobility ◽  
Scattering Theory ◽  
Field Effect Transistors ◽  
High Electron Mobility Transistors ◽  
Electron Velocity ◽  
High Electron ◽  
Current Output ◽  
High Electron Mobility ◽  
Electron Mobility Transistors

Abstract Electron mobility is important for electron velocity, transport current, output power, and frequency characteristics. In conventional mobility extraction methods, electron mobility is usually extracted directly from the measured gate capacitance (CG) and current-voltage characteristics. When device gate length (LG) scales to sub-100 nm, the determination of CG becomes more difficult not only for the measure equipment but also the enhanced effect from parasitic capacitance. Here in this paper, the CG extracted from high-frequency small-signal equipment circuit is used for the InAlN/GaN high electron mobility transistors (HEMTs). Electron mobility of the device with LG of 60-nm under VDS of 0.1 V and 10 V is extracted using two-dimensional scattering theory, respectively. The obtained results show that under a high electric field, the electron temperature (Te) and addition polarization charges (∆σ) increase, resulting in the enhanced polar optical phonon (POP) as well as polarization Coulomb field (PCF) scatterings and degradation of the electron mobility. This study makes it possible to improve the electron mobility by reducing Te and ∆σ for the InAlN/GaN HEMTs application.AlGaN/GaN heterostructure field-effect transistors with different gate lengths were fabricated. Based on the chosen of the Hamiltonian of the system and the additional polarization charges, two methods to calculate PCF scattering by the scattering theory were presented. By comparing the measured and calculated source-drain resistances, the influence of the different gate lengths on the PCF scattering potential was confirmed.

scholarly journals Electric Field Reduction in C-Doped AlGaN/GaN on Si High Electron Mobility Transistors

2015 ◽  
Vol 36 (8) ◽  
pp. 826-828 ◽  
Author(s):  
Michael J. Uren ◽  
Markus Caesar ◽  
Serge Karboyan ◽  
Peter Moens ◽  
Piet Vanmeerbeek ◽  
...  
Keyword(s):  
Electric Field ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Gan On Si

scholarly journals Effect of the High-Temperature Off-State Stresses on the Degradation of AlGaN/GaN HEMTs

Electronics ◽  
2019 ◽  
Vol 8 (11) ◽  
pp. 1339
Author(s):  
Jinfu Lin ◽  
Hongxia Liu ◽  
Shulong Wang ◽  
Chang Liu ◽  
Mengyu Li ◽  
...  
Keyword(s):  
High Temperature ◽  
Electric Field ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
Simultaneous Action ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Significant Difference ◽  
The Impact

GaN-based high electron mobility transistors offer high carrier density combined with high electron mobility and often require operation at high frequencies, voltages, and temperatures. The device may be under high temperature and high voltage at the same time in actual operation. In this work, the impact of separate off-state stresses, separate high-temperature stresses, and off-state stresses at high temperatures on AlGaN/GaN high electron mobility transistors (HEMTs) grown on Si substrates was investigated. The output current and gate leakage of the device degenerated to different degrees under either isolated off-state or high-temperature stress. The threshold voltage of the device only exhibited obvious negative drift under the action of high-temperature and off-state stresses. The parameter at high temperature (or room temperature) before stress application was the reference. We found that there was no significant difference in the degradation rate of drain current and transconductance peak when the same off-state stress was applied to the device at different temperatures. It was concluded that, under the high-temperature off-state electric field pressure, there were two degradation mechanisms: one was the inverse piezoelectric polarization mechanism only related to the electric field, and the other was the degradation mechanism of the simultaneous action of temperature and electric field.

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