Effect of Interface Polarization Charge on GaN/SiC Separate Absorption and Multiplication Avalanche Photodiodes

Paul H. Shen; Anand V. Sampath; Quigui Zhou; Joe Campbell; Michael Wraback

doi:10.1149/1.3629956

Effect of Interface Polarization Charge on GaN/SiC Separate Absorption and Multiplication Avalanche Photodiodes

ECS Transactions ◽

10.1149/1.3629956 ◽

2019 ◽

Vol 41 (6) ◽

pp. 81-87

Author(s):

Paul H. Shen ◽

Anand V. Sampath ◽

Quigui Zhou ◽

Joe Campbell ◽

Michael Wraback

Keyword(s):

Avalanche Photodiodes ◽

Interface Polarization ◽

Polarization Charge

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Effect of Interface Polarization Charge on GaN/SiC Separate Absorption and Multiplication Avalanche Photodiodes

ECS Meeting Abstracts ◽

10.1149/ma2011-02/31/2085 ◽

2011 ◽

Keyword(s):

Avalanche Photodiodes ◽

Interface Polarization ◽

Polarization Charge

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Effect of interface polarization charge on the performance of nitride semiconductor light emitting diodes

10.1117/12.773871 ◽

2008 ◽

Cited By ~ 3

Author(s):

Hongen Shen ◽

Meredith L. Reed ◽

Eric D. Readinger ◽

Michael Wraback

Keyword(s):

Light Emitting Diodes ◽

Light Emitting ◽

Interface Polarization ◽

Polarization Charge ◽

Nitride Semiconductor

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Dependence of dark current and photoresponse characteristics on polarization charge density for GaN-based avalanche photodiodes

Journal of Physics D Applied Physics ◽

10.1088/0022-3727/44/40/405102 ◽

2011 ◽

Vol 44 (40) ◽

pp. 405102 ◽

Cited By ~ 28

Author(s):

Xiaodong Wang ◽

Weida Hu ◽

Xiaoshuang Chen ◽

Jintong Xu ◽

Ling Wang ◽

...

Keyword(s):

Charge Density ◽

Dark Current ◽

Avalanche Photodiodes ◽

Polarization Charge

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Amorphous Si/SiC phototransistors and avalanche photodiodes

IEE Proceedings J Optoelectronics ◽

10.1049/ip-j.1991.0040 ◽

1991 ◽

Vol 138 (3) ◽

pp. 226 ◽

Cited By ~ 1

Author(s):

C.Y. Chang ◽

J.W. Hong ◽

Y.K. Fang

Keyword(s):

Avalanche Photodiodes ◽

Amorphous Si

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Harmonized system of quality assessment for electronic components. Semiconductor devices. Optoelectronic devices. Blank detail specification for avalanche photodiodes (APDs) with/without pigtail, for fibre optic systems or subsystems

10.3403/01126847 ◽

1997 ◽

Keyword(s):

Quality Assessment ◽

Semiconductor Devices ◽

Avalanche Photodiodes ◽

Optoelectronic Devices ◽

Fibre Optic ◽

Electronic Components ◽

Optic Systems

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Multiple Quantum Barrier Nano-avalanche Photodiodes - Part III: Time and Frequency Responses

Nanoscience &Nanotechnology-Asia ◽

10.2174/2210681208666180813122642 ◽

2019 ◽

Vol 9 (2) ◽

pp. 192-197

Author(s):

Somrita Ghosh ◽

Aritra Acharyya

Keyword(s):

Optical Pulse ◽

Pulse Current ◽

Avalanche Photodiodes ◽

Simulation Method ◽

Rectangular Pulse ◽

Operating Conditions ◽

Multiple Quantum ◽

Material System ◽

Frequency Responses ◽

The Fourier Transform

Background: The time and frequency responses of Multiple Quantum Barrier (MQB) nano-scale Avalanche Photodiodes (APDs) based on Si~3C-SiC material system have been investigated in this final part. Methods: A very narrow rectangular pulse of pulse-width of 0.4 ps has been used as the input optical pulse having 850 nm wavelength incidents on the p+-side of the MQB APD structures and corresponding current responses have been calculated by using a simulation method developed by the authors. Results: Finally the frequency responses of the devices are obtained via the Fourier transform of the corresponding pulse current responses in time domain. Conclusion: Simulation results show that MQB nano-APDs possess significantly faster time response and wider frequency response as compared to the flat Si nano-APDs under similar operating conditions.

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