Improving Resistance Switching Characteristics with SiGeOx/SiGeON Double Layer for Nonvolatile Memory Applications

2011 ◽  
Vol 14 (10) ◽  
pp. H419 ◽  
Author(s):  
Yong-En Syu ◽  
Ting-Chang Chang ◽  
Chih-Tsung Tsai ◽  
Geng-Wei Chang ◽  
Tsung-Ming Tsai ◽  
...  
Keyword(s):  
Double Layer ◽  
Nonvolatile Memory ◽  
Resistance Switching ◽  
Switching Characteristics ◽  
Memory Applications

Resistance Switching Characteristics of Metal Oxides for Nonvolatile Memory Applications

2019 ◽  
Vol 6 (3) ◽  
pp. 119-135
Author(s):  
Rui Dong ◽  
Dongsoo Lee ◽  
Wenfeng Xiang ◽  
Dong-Jun Seong ◽  
Seokjoon Oh ◽  
...  
Keyword(s):  
Metal Oxides ◽  
Nonvolatile Memory ◽  
Resistance Switching ◽  
Switching Characteristics ◽  
Memory Applications

The resistive switching characteristics in TaON films for nonvolatile memory applications

2013 ◽  
Vol 528 ◽  
pp. 224-228 ◽  
Author(s):  
Min-Chen Chen ◽  
Ting-Chang Chang ◽  
Yi-Chieh Chiu ◽  
Shih-Cheng Chen ◽  
Sheng-Yao Huang ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Nonvolatile Memory ◽  
Switching Characteristics ◽  
Memory Applications
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