Lateral Crystallization Velocity in Explosive Crystallization of Amorphous Silicon Films Induced by Flash Lamp Annealing

2011 ◽  
Vol 14 (9) ◽  
pp. H372 ◽  
Author(s):  
Keisuke Ohdaira ◽  
Naohito Tomura ◽  
Shohei Ishii ◽  
Hideki Matsumura
2009 ◽  
Vol 106 (4) ◽  
pp. 044907 ◽  
Author(s):  
Keisuke Ohdaira ◽  
Tomoko Fujiwara ◽  
Yohei Endo ◽  
Shogo Nishizaki ◽  
Hideki Matsumura

2014 ◽  
Vol 92 (7/8) ◽  
pp. 718-722 ◽  
Author(s):  
Keisuke Ohdaira

Flash lamp annealing (FLA) of micrometre-order thick amorphous silicon (a-Si) films can induce explosive crystallization (EC), high-speed lateral crystallization driven by the release of latent heat. We develop multipulse FLA system, which emits a quasi-millisecond pulse consisting of a number of subpulses. The emission frequency of the subpulses can be systematically controlled, and the emission of subpulses leads to the periodic modulation of the temperature of a Si film and the resulting formation of macroscopic stripe patterns. The relationship between a subpulse emission frequency and the width of the macroscopic stripe patterns yields EC velocity. Two kinds of EC modes can be observed, depending on the methods of precursor a-Si deposition and (or) a-Si film thickness.


2003 ◽  
Vol 80 (3) ◽  
pp. 577-580 ◽  
Author(s):  
You-Da Lin ◽  
YewChung Sermon Wu ◽  
Chi-Wei Chao ◽  
Guo-Ren Hu

1984 ◽  
Vol 117 (2) ◽  
pp. 117-123 ◽  
Author(s):  
B. Loisel ◽  
B. Guenais ◽  
A. Poudoulec ◽  
P. Henoc

2010 ◽  
Vol 312 (19) ◽  
pp. 2834-2839 ◽  
Author(s):  
Keisuke Ohdaira ◽  
Takuya Nishikawa ◽  
Hideki Matsumura

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