Electrical properties of polycrystalline silicon films formed from amorphous silicon films by flash lamp annealing

2011 ◽  
Vol 11 (3) ◽  
pp. 604-607 ◽  
Author(s):  
Takuya Nishikawa ◽  
Keisuke Ohdaira ◽  
Hideki Matsumura
Author(s):  
Curtis Anderson ◽  
Lin Cui ◽  
Uwe Kortshagen

This paper describes the rapid formation of polycrystalline silicon films through seeding with silicon nanocrystals. The incorporation of seed crystals into amorphous silicon films helps to eliminate the crystallization incubation time observed in non-seeded amorphous silicon films. Furthermore, the formation of several tens of nanometer in diameter voids is observed when cubic silicon nanocrystals with around 30 nm in size are embedded in the amorphous films. These voids move through the amorphous film with high velocity, pulling behind them a crystallized “tail.” This mechanism leads to rapid formation of polycrystalline films.


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