Single- and Dual-Layer Nanocrystalline Indium Tin Oxide Embedded ZrHfO High-k Films for Nonvolatile Memories – Material and Electrical Properties

2011 ◽  
Vol 158 (8) ◽  
pp. H756 ◽  
Author(s):  
Chen-Han Lin ◽  
Yue Kuo
Keyword(s):  
Electrical Properties ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Nonvolatile Memories ◽  
High K

scholarly journals Black Phosphorus-Molybdenum Disulfide Hetero-Junctions Formed with Ink-Jet Printing for Potential Solar Cell Applications with Indium-Tin-Oxide

Crystals ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 560
Author(s):  
Ravindra Ketan Mehta ◽  
Anupama Bhat Kaul
Keyword(s):  
Electrical Properties ◽  
Molybdenum Disulfide ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Cost Effective ◽  
Contact Materials ◽  
Ito Glass ◽  
The Future ◽  
Potential Applications ◽  
Jet Printing

In this work, we implemented liquid exfoliation to inkjet-print two-dimensional (2D) black phosphorous (BP) and molybdenum disulfide (MoS2) p–n heterojunctions on a standard indium tin oxide (ITO) glass substrate in a vertical architecture. We also compared the optical and electrical properties of the inkjet-printed BP layer with that of the MoS2 and the electrical properties of the mechanically exfoliated MoS2 with that of the inkjet-printed MoS2. We found significant differences in the optical characteristics of the inkjet-printed BP and MoS2 layers attributed to the differences in their underlying crystal structure. The newly demonstrated liquid exfoliated and inkjet-printed BP–MoS2 2D p–n junction was also compared with previous reports where mechanically exfoliated BP–MoS2 2D p–n junction were used. The electronic transport properties of mechanically exfoliated MoS2 membranes are typically better compared to inkjet-printed structures but inkjet printing offers a cost-effective and quicker way to fabricate heterostructures easily. In the future, the performance of inkjet-printed structures can be further improved by employing suitable contact materials, amongst other factors such as modifying the solvent chemistries. The architecture reported in this work has potential applications towards building solar cells with solution processed 2D materials in the future.

Real-time evolution of electrical properties and structure of indium oxide and indium tin oxide during crystallization

2009 ◽  
Vol 60 (4) ◽  
pp. 199-202 ◽  
Author(s):  
A. Rogozin ◽  
M. Vinnichenko ◽  
N. Shevchenko ◽  
U. Kreissig ◽  
A. Kolitsch ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Real Time ◽  
Time Evolution ◽  
Indium Oxide ◽  
Tin Oxide ◽  
Indium Tin Oxide

Influence of Substrate Temperature on Morphological and Electrical Properties of Indium Tin Oxide Nanocolumns Prepared by RF Magnetron Sputtering

2013 ◽  
Vol 832 ◽  
pp. 281-285
Author(s):  
S. Najwa ◽  
A. Shuhaimi ◽  
N. Ameera ◽  
K.M. Hakim ◽  
M. Sobri ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Transparent Conducting Oxide ◽  
Rf Magnetron Sputtering ◽  
Morphological Properties ◽  
Average Roughness ◽  
Influence Of Substrate

Indium tin oxide was prepared using RF magnetron sputtering at different substrate temperature. The morphological and electrical properties were investigated. Morphological properties were observed by atomic force microscopy. Electrical properties were measured using standard two-point probe measurements. The result shows that the average roughness and peak to valley value are highest at high substrate temperature. The watershed analysis shows that the total grain boundaries are highest at the substrate temperature of 200°C. The lowest resistivity value of 9.57×10-5 Ωcm is obtained from ITO nanocolumn deposited at substrate temperature of 200°C. The improvement of morphological and electrical properties as transparent conducting oxide was observed from ITO nanocolumn deposited at substrate temperature of 200°C.

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