Indium-Tin-Oxide Embedded in Zirconium-Doped Hafnium Oxide High-k Dielectric Films for Hole-Based Nonvolatile Memories

2019 ◽  
Vol 3 (3) ◽  
pp. 193-201
Author(s):  
Yue Kuo ◽  
Adam Birge ◽  
Chen-Han Lin
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Hafnium Oxide ◽  
Dielectric Films ◽  
Nonvolatile Memories ◽  
High K ◽  
High K Dielectric

Application of ALD High-k Dielectric Films as Charge Storage Layer and Blocking Oxide in Nonvolatile Memories

2019 ◽  
Vol 25 (6) ◽  
pp. 473-479
Author(s):  
Xiaoxiao Zhu ◽  
Diefeng Gu ◽  
Qiliang Li ◽  
Helmut Baumgart ◽  
Dimitris Ioannou ◽  
...  
Keyword(s):  
Dielectric Films ◽  
Charge Storage ◽  
Nonvolatile Memories ◽  
High K ◽  
High K Dielectric

Quantum Dot Gate (QDG) Quantum Dot Channel (QDC) Multistate Logic Non-Volatile Memory (NVM) with High-K Dielectric HfO2 Barriers

2020 ◽  
Vol 29 (01n04) ◽  
pp. 2040001
Author(s):  
N. R. Butterfield ◽  
R. Mays ◽  
B. Khan ◽  
R. Gudlavalleti ◽  
F. C. Jain
Keyword(s):  
Quantum Dot ◽  
Hafnium Oxide ◽  
Experimental Testing ◽  
Memory Cell ◽  
Floating Gate ◽  
Carrier Injection ◽  
High K ◽  
Non Volatile Memory ◽  
Volatile Memory ◽  
High K Dielectric

This paper presents the theory, fabrication and experimental testing results for a multiple state Non-Volatile Memory (NVM), comprised of hafnium oxide high-k dielectric tunnel and gate barriers as well as a Silicon Quantum Dot Superlattice (QDSL) implemented for the floating gate and inversion channel (QDG) and (QDC) respectively. With the conclusion of Moore’s Law for conventional transistor fabrication, regarding the minimum gate size, current efforts in memory cell research and development are focused on bridging the gap between the conventions of the past sixty years and the future of computing. One method of continuing the increasing chip density is to create multistate devices capable of storing and processing additional logic states beyond 1 and 0. Replacing the silicon nitride floating gate of a conventional Flash NVM with QDSL gives rise to minibands that result in greater control over charge levels stored in the QDG and additional intermediate states. Utilizing Hot Carrier Injection (HCI) programming, for the realized device, various magnitudes of gate voltage pulses demonstrated the ability to accurately control the charge levels stored in the QDG. This corresponds to multiple threshold voltage shifts allowing detection of multiple states during read operations.

scholarly journals ELECTRODELESS MEASUREMENT TECHNIQUE OF COMPLEX DIELECTRIC PERMITTIVITY OF HIGH-K DIELECTRIC FILMS IN THE MILLIMETER WAVELENGTH RANGE

2016 ◽  
Vol 52 ◽  
pp. 161-167 ◽  
Author(s):  
Igor V. Kotelnikov ◽  
Andrey G. Altynnikov ◽  
Anatoly Konstantinovich Mikhailov ◽  
Valentina V. Medvedeva ◽  
Andrey Kozyrev
Keyword(s):  
Dielectric Permittivity ◽  
Wavelength Range ◽  
Measurement Technique ◽  
Complex Dielectric Permittivity ◽  
Dielectric Films ◽  
Millimeter Wavelength ◽  
High K ◽  
High K Dielectric

Modelling the Deposition of High-k Dielectric Films by First Principles

2004 ◽  
Vol 13 (1-3) ◽  
pp. 117-120 ◽  
Author(s):  
Simon D. Elliott ◽  
Henry P. Pinto
Keyword(s):  
First Principles ◽  
Dielectric Films ◽  
High K ◽  
High K Dielectric

New Perovskite Nanomaterials and Their Integrations into High-k Dielectrics

2011 ◽  
Vol 2011 (CICMT) ◽  
pp. 000072-000077
Author(s):  
Minoru Osada ◽  
Takayoshi Sasaki
Keyword(s):  
Dielectric Properties ◽  
Room Temperature ◽  
Bottom Electrode ◽  
Dielectric Constants ◽  
Dielectric Films ◽  
Layered Perovskite ◽  
Layer By Layer ◽  
High K ◽  
High K Dielectric ◽  
High Dielectric

We report on a bottom-up manufacturing for high-k dielectric films using a novel nanomaterial, namely, a perovskite nanosheet (LaNb2O7) derived from a layered perovskite by exfoliation. Solution-based layer-by-layer assembly of perovskite nanosheets is effective for room-temperature fabrication of high-k nanocapacitors, which are directly assembled on a SrRuO3 bottom electrode with an atomically sharp interface. These nanocapacitors exhibit high dielectric constants (k > 50) for thickness down to 5 nm while eliminating problems resulting from the size effect. We also investigate dielectric properties of perovskite nanosheets with different compositions (LaNb2O7, La0.95Eu0.05Nb2O7, and Eu0.56Ta2O7) in order to study the influence of A- and B-site modifications on dielectric properties.

Liquid Capacitor Based on Hafnium Oxide

2019 ◽  
Vol 801 ◽  
pp. 211-216
Author(s):  
Muhammad Umair Khan ◽  
Gul Hassan ◽  
Muhammad Asim Raza ◽  
Jin Ho Bae
Keyword(s):  
Surface Tension ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Hafnium Oxide ◽  
Aqueous Electrolyte ◽  
Current Collector ◽  
Electrochemical Analysis ◽  
Deionized Water ◽  
Pdms Mold ◽  
X Ray

In this work, we synthesize Hafnium (IV) oxide (HfO2) ink from hafnium chloride (HfCl4) powder assisted with deionized water. The poly acrylic acid (PAA) is used as surfactant to decrease the surface tension. Conversion of HfCl4 into HfO2 was detected by Raman spectroscopy and energy dispersive X-ray spectroscopy (EDS) characterization techniques. This proposed ink can be easily synthesized at a low temperature. Using the synthesis ink, a liquid capacitor is proposed, which is tested for electrochemical analysis. Indium tin oxide (ITO) coated PET is used as bottom and top current collector electrode, polydimethylsiloxane (PDMS) mold is used as separator, and HfO2 ink is used as aqueous electrolyte. Liquid capacitor is also tested on different bending diameters using bending machine from flat down to 10 mm bending curvature, which shows a stable capacitor function.

Sign in / Sign up

Export Citation Format

Share Document