scholarly journals Chemical, Electronic and Nanostructure Dynamics on Sr(Ti1-xFex)O3 Thin-Film Surfaces at High Temperatures

2019 ◽  
Vol 35 (1) ◽  
pp. 2409-2416 ◽  
Author(s):  
Yan Chen ◽  
Woo Chul Jung ◽  
Yener Kuru ◽  
Harry L. Tuller ◽  
Bilge Yildiz
Keyword(s):  
2018 ◽  
Vol 112 (21) ◽  
pp. 213502 ◽  
Author(s):  
Sebastian Schröder ◽  
Holger Fritze ◽  
Sean Bishop ◽  
Di Chen ◽  
Harry L. Tuller

2020 ◽  
Vol 15 (05) ◽  
pp. P05010-P05010
Author(s):  
A. Cannavò ◽  
J. Vacík ◽  
V. Hnatowicz ◽  
G. Ceccio ◽  
P. Horák ◽  
...  
Keyword(s):  

2009 ◽  
Vol 1214 ◽  
Author(s):  
Naoki Shiraishi ◽  
Yushi Kato ◽  
Hideki Arai ◽  
Nobuo Tsuchimine ◽  
Susumu Kobayashi ◽  
...  

AbstractNiO is a typical material for new p-type oxide semiconductors. Conductivity of NiO can be raised with Li+ doping. In case of Li-heavy doping, we can obtain LixNiO2(0.5< × <1.0). Recently the importance of LiNiO2 has been increased as an electrode material for rechargeable lithium cells.In this work, we tried to fabricate a novel NiO material with Li+-heavily doped by applying the pulsed laser-induced room temperature (R.T.) film process. Previously, we have succeeded in the epitaxial growth of various oxide thin films at R.T. such as Sn-doped In2O3 transparent electrodes [1]. Although the many studies have been made on the deposition of NiO epitaxial thin film at low temperatures [2], there are few reports on fabrication and the conductive characteristic for Li-heavily doped NiO epitaxial films. The film deposition at R.T., which is the unequilibrium vapor phase process, is expected to result in different crystal structure and characteristics from the films grown at high-temperatures.A composition-adjusted thin film of LixNi1-xO(0.10< × <0.40) was deposited on a sapphire (α-Al2O3)(0001) or MgO(100) substrates by pulsed laser deposition (PLD) technique in 10−6 Torr of oxygen at R.T. and the high temperatures of 350 and 515°C. Crystalline properties of thin films deposited at R.T. or high temperatures were examined using reflection high energy electron diffraction (RHEED) and X-ray diffraction. For the Li-heavily doped NiO films(x>0.30) grown at R.T., a clear streak RHEED pattern showing epitaxial growth was observed. But the Li-heavily doped NiO films grown at high temperatures, exhibited the ring RHEED pattern, which indicates the policrystal growth of films. Electric conductivity of various Li-doped NiO thin films deposited at R.T. or high temperatures on sapphire (0001) substrates were measured by two-probe method. The interesting results were obtained that conductivity of the film was increased remarkably with an increase of Li-doping for R.T. deposition, but was not changed so much regardless of Li-doping for high-temperature depositions.


2006 ◽  
Vol 301 ◽  
pp. 91-94
Author(s):  
Yasuhiro Isshiki ◽  
Kaoru Dokko ◽  
Jun Ichi Hamagami ◽  
Takashi Takei ◽  
Kiyoshi Kanamura

Thin films of lithium ion conductive ceramic Li4+xAlxSi1-xO4 were fabricated on Au substrate using sol-gel process. The sol of Li-Al-Si-O was spread on Au substrate using a spin coater, and it was gelated at room temperature. The gel was calcinated at 400 °C and heat-treated at high temperatures between 500 °C and 800 °C in air. The addition of poly(vinylpyrrolidone) (PVP) was effective in stabilizing the sol. Furthermore, the morphology of the obtained thin film was changed by the PVP additive. Li4+xAlxSi1-xO4 thin film prepared at 800 °C exhibited a Li+ ion conductivity of 10-8 S cm-1 at room temperature.


2021 ◽  
Author(s):  
Zhichun Liu ◽  
Junsheng Liang ◽  
Jian Li ◽  
Hao Zhou ◽  
Mingjie Yang ◽  
...  

Abstract Nitrogen-doped indium tin oxide (ITO) has been applied in the thin-film strain gauges (TFSGs) due to their high stability, excellent piezoresistivity and antioxidation at elevated temperatures. However, the mechanism on the sensing and stability of the nitrogen-doped ITO TFSGs at high temperatures was not comprehensively clarified. In this work, various ITO TFSGs were fabricated by RF magnetron sputtering with different nitrogen partial pressures (NPPs) of 5%~40%. The elemental composition and band structures of the ITO TFSGs were examined by the energy dispersive X-ray spectroscopy (EDS) and X-ray photoelectron spectroscopy (XPS), respectively. Results show that the Fermi energy level shifts closer to the valence band maximum energy (Ev) gradually with the growth of NPPs, causing a reduction in the number of electrons ionized to the conduction band. The smallest content change rates of nitrogen (3.8%) and oxygen (1.6%) after subjecting to the thermal strain test were observed in the 20%N2 ITO TFSG. In consequence, the 20%N2 ITO TFSG exhibits the lowest resistance drift rate (DR) at high temperatures due to its stable elemental composition. Moreover, we found that the band structures and elemental composition of the ITO TFSGs are the main factors affecting their piezoresistive response at different temperatures. The band structures play a major role in the gauge factors (GFs) of the ITO TFSGs at room temperature and 600 ℃. The element variation takes responsibility for the different GFs of the ITO TFSGs at 800℃, 900℃ and 1000℃. In addition, the piezoresistive stability is also dependent on the elemental composition affected by the dynamic equilibrium between the diffusion amount of oxygen and the escape number of the nitrogen in the ITO thin films at high temperatures.


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