Studies on oxygen chemical surface exchange and electrical conduction in thin film nanostructured titania at high temperatures and varying oxygen pressure

2011 ◽  
Vol 134 (1) ◽  
pp. 014704 ◽  
Author(s):  
Changhyun Ko ◽  
Annamalai Karthikeyan ◽  
Shriram Ramanathan
Keyword(s):  
Thin Film ◽  
High Temperatures ◽  
Oxygen Pressure ◽  
Electrical Conduction ◽  
Surface Exchange ◽  
Chemical Surface ◽  
Nanostructured Titania

Electrical Conduction in Thin Film Carbons.

1987 ◽  
Author(s):  
K. Sugihara ◽  
M. S. Dresselhaus
Keyword(s):  
Thin Film ◽  
Electrical Conduction

Effects of Bi:V ratio and oxygen pressure on BiVO4(010) epitaxial thin film preparation

2021 ◽  
pp. 413174
Author(s):  
Yuxin Shi ◽  
Pengwei Zhai ◽  
Lixiang Meng ◽  
Zongyin Huang ◽  
Guoqiang Li
Keyword(s):  
Thin Film ◽  
Oxygen Pressure ◽  
Epitaxial Thin Film ◽  
Thin Film Preparation ◽  
Film Preparation

Doping Effect in Nickel Oxide

2009 ◽  
Vol 289-292 ◽  
pp. 775-782 ◽  
Author(s):  
Zbigniew Jurasz ◽  
Krzysztof Adamaszek ◽  
Romuald Janik ◽  
Zbigniew Grzesik ◽  
Stanisław Mrowec
Keyword(s):  
Activation Energy ◽  
Nickel Oxide ◽  
High Temperatures ◽  
Oxygen Pressure ◽  
Pressure Dependence ◽  
Oxidation Rate ◽  
Doping Effect ◽  
Self Diffusion ◽  
Electron Holes ◽  
Influence Of Impurities

Detailed investigations of nonstoichiometry as well as chemical and self-diffusion in nickel oxide have shown that doubly ionised cation vacancies and electron holes are the predominant defects in this material. The present work is an attempt to demonstrate that aliovalent impurities (Cr, Al, Na and Li) may considerably influence the concentration of these defects and, consequently, the oxidation rate of nickel at high temperatures. It has been shown that small amounts of tri-valent impurities (Cr, Al) bring about an increase of the oxidation rate, while mono-valent ones (Li, Na) decrease the rate of oxidation. These phenomena may satisfactorily be explained in terms of a doping effect. All experiments have been carried out as a function of temperature (1373-1673 K) and oxygen pressure (1-105 Pa) and consequently, it was possible to determine the influence of impurities not only on the oxidation rate but also on the activation energy of reaction and its pressure dependence. The results of these investigations could again be elucidated in terms of doping effect.

scholarly journals Chemical, Electronic and Nanostructure Dynamics on Sr(Ti1-xFex)O3 Thin-Film Surfaces at High Temperatures

2019 ◽  
Vol 35 (1) ◽  
pp. 2409-2416 ◽  
Author(s):  
Yan Chen ◽  
Woo Chul Jung ◽  
Yener Kuru ◽  
Harry L. Tuller ◽  
Bilge Yildiz
Keyword(s):  
Thin Film ◽  
High Temperatures
Sign in / Sign up

Export Citation Format

Share Document