Copper Wire Bonding in High Volume Manufacturing

2019 ◽  
Vol 34 (1) ◽  
pp. 857-864 ◽  
Author(s):  
Bernd K. Appelt ◽  
Andy Tseng ◽  
Yi-Shao Lai ◽  
Chun-Hsiung Chen
Keyword(s):  
Copper Wire ◽  
High Volume ◽  
Wire Bonding ◽  
Copper Wire Bonding

Copper Wire Bonding: R&D to High Volume Manufacturing

2012 ◽  
Vol 2012 (1) ◽  
pp. 000638-000649 ◽  
Author(s):  
Bob Chylak ◽  
Horst Clauberg ◽  
John Foley ◽  
Ivy Qin
Keyword(s):  
Copper Wire ◽  
Leading Edge ◽  
Relative Sensitivity ◽  
High Volume ◽  
Gold Wire ◽  
Wire Bonding ◽  
Bonding Process ◽  
Wire Diameter ◽  
Bond Quality ◽  
Copper Wire Bonding

During the past two years copper wire bonding has entered high volume manufacturing at a number of leading edge OSATs and IDMs. Usage of copper wire has achieved 20% market share and is expected to exceed 50% within three years. Products spanning the range from low pin count devices with relatively large wire diameter to FPGA's with nearly one thousand wires at 20 μm or even 18 μm wire are now using copper wire. This paper will discuss the requirements for developing a robust copper wire bonding process and then moving it to high volume manufacturing. Process optimization begins with the selection of the appropriate wire diameter, ball diameter, bonding tool and bonding process type. These are functions not only of the bond pad opening, but also of the pad aluminum thickness and relative sensitivity of the pad to damage. Proper optimization depends on the availability of new and modified bond quality metrologies, such as extensive reliance on cross-sectioning and intermetallic coverage measurements. The bonding window of a copper wire bonding process is defined in substantially new terms compared to optimization in gold wire bonding. Once an optimized process has been developed in the lab on a single bonder, it needs to be verified. Copper wire bond processes are much less forgiving with respect to the acceptable variability on the manufacturing floor. To ensure that the process is stable, a low volume pre-manufacturing test is highly recommended. This not only makes sure that the process is stable across multiple bonders, but also ensures the adequacies of manufacturing controls, incoming materials quality and sufficient equipment calibration and maintenance procedures.

Fine pitch copper wire bonding in high volume production

2011 ◽  
Vol 51 (1) ◽  
pp. 13-20 ◽  
Author(s):  
Bernd K. Appelt ◽  
Andy Tseng ◽  
Chun-Hsiung Chen ◽  
Yi-Shao Lai
Keyword(s):  
Copper Wire ◽  
High Volume ◽  
Wire Bonding ◽  
Fine Pitch ◽  
Copper Wire Bonding ◽  
High Volume Production ◽  
Volume Production

Failure Analysis on Power Trench MOSFET Devices with Copper Wire Bonds

2011 ◽  
Author(s):  
Huixian Wu ◽  
Arthur Chiang ◽  
David Le ◽  
Win Pratchayakun
Keyword(s):  
Failure Analysis ◽  
Copper Wire ◽  
New Technology ◽  
Analytical Techniques ◽  
Wire Bonding ◽  
Bonding Process ◽  
Wire Bonds ◽  
Copper Wire Bonding ◽  
Wet Chemical ◽  
Microelectronic Components

Abstract With gold prices steadily going up in recent years, copper wire has gained popularity as a means to reduce cost of manufacturing microelectronic components. Performance tradeoff aside, there is an urgent need to thoroughly study the new technology to allay any fear of reliability compromise. Evaluation and optimization of copper wire bonding process is critical. In this paper, novel failure analysis and analytical techniques are applied to the evaluation of copper wire bonding process. Several FA/analytical techniques and FA procedures will be discussed in detail, including novel laser/chemical/plasma decapsulation, FIB, wet chemical etching, reactive ion etching (RIE), cross-section, CSAM, SEM, EDS, and a combination of these techniques. Two case studies will be given to demonstrate the use of these techniques in copper wire bonded devices.

scholarly journals Development of high reliability semiconductor devices by copper wire bonding.

1988 ◽  
Vol 27 (4) ◽  
pp. 299-301
Author(s):  
J. Hirota ◽  
Y. Shibutani ◽  
T. Sugimura ◽  
K. Machida ◽  
T. Okuda
Keyword(s):  
High Reliability ◽  
Copper Wire ◽  
Semiconductor Devices ◽  
Wire Bonding ◽  
Copper Wire Bonding

Direct Palladium-Gold on copper as a Surface Finish for next generation Packages.

2013 ◽  
Vol 2013 (DPC) ◽  
pp. 001145-001184
Author(s):  
Mustafa Ozkok ◽  
Sven Lamprecht ◽  
Gustavo Ramos ◽  
Arnd Kilian
Keyword(s):  
Surface Finish ◽  
Copper Wire ◽  
Environmental Issues ◽  
Wire Bonding ◽  
Gold Layer ◽  
Test Results ◽  
Fine Line ◽  
Surface Finishes ◽  
Copper Wire Bonding ◽  
Bond Tests

A new surface finish is entering the market. The need for this finish comes from needs for new assembly technologies like copper wire bonding or chip assembly by thermo compression bond. Furthermore Nickel an element, which is the base of many surface finishes like ENIG or ENEPIG, is more and more regarded as an unpleasant element as of several disadvantages, such as for high frequency applications, for environmental issues or for fine line applications were a 5 μm Ni Layer is just simply too thick. All these concerns supporting the introduction of a new surface finish, a direct EP and direct EPAG finish. In particular, its suitability for copper wire bonding and its fine line capability makes it very attractive from a cost standpoint of view. In addition, the mentioned technological handicaps of nickel based finishes could be solved by applying a revolutionary surface finish – A Direct Palladium with an optional gold layer. The direct deposition of palladium on copper with an optional gold layer does have further technological, environmental and economical advantages. The suggested paper will describe and discuss the advantages and chances using this new surface finish, as well as demonstrate soldering on various wire bond tests on the Direct EP and EPAG finishes as well as soldering test results.

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