Enhancement-Mode AlGaN/GaN HEMTs Fabricated by Standard Fluorine Ion Implantation with a Si3N4 Energy-Absorbing Layer
2011 ◽
Vol 14
(6)
◽
pp. H229
◽
Keyword(s):
Keyword(s):
2013 ◽
Vol 52
(8S)
◽
pp. 08JN02
◽
2008 ◽
Vol 5
(6)
◽
pp. 1929-1931
◽
2006 ◽
Vol 53
(6)
◽
pp. 1474-1477
◽
2006 ◽
Vol 27
(4)
◽
pp. 205-207
◽
Keyword(s):
2003 ◽
Vol 47
(11)
◽
pp. 2081-2084
◽
2019 ◽
Vol 55
(2)
◽
pp. 1807-1816
◽