Enhancement-mode AlGaN/GaN HEMTs with thin InGaN cap layer

2008 ◽  
Vol 5 (6) ◽  
pp. 1929-1931 ◽  
Author(s):  
M. Ito ◽  
S. Kishimoto ◽  
F. Nakamura ◽  
T. Mizutani
Keyword(s):  
Enhancement Mode ◽  
Cap Layer ◽  
Gan Hemts

Enhancement‐mode AlGaN/GaN HEMTs with optimised electric field using a partial GaN cap layer

2017 ◽  
Vol 12 (10) ◽  
pp. 763-766 ◽  
Author(s):  
Haijun Guo ◽  
Baoxing Duan ◽  
Shenlong Xie ◽  
Song Yuan ◽  
Yintang Yang
Keyword(s):  
Electric Field ◽  
Enhancement Mode ◽  
Cap Layer ◽  
Gan Hemts

Enhancement-mode AlGaN/GaN HEMTs on silicon substrate

2006 ◽  
Vol 53 (6) ◽  
pp. 1474-1477 ◽  
Author(s):  
Shuo Jia ◽  
Yong Cai ◽  
Deliang Wang ◽  
Baoshun Zhang ◽  
K.M. Lau ◽  
...  
Keyword(s):  
Silicon Substrate ◽  
Enhancement Mode ◽  
Gan Hemts

Quasi-enhancement mode AlGaN/GaN HEMTs on sapphire substrate

2003 ◽  
Vol 47 (11) ◽  
pp. 2081-2084 ◽  
Author(s):  
Jaesun Lee ◽  
Dongmin Liu ◽  
Zhaojun Lin ◽  
Wu Lu ◽  
Jeffrey S. Flynn ◽  
...  
Keyword(s):  
Sapphire Substrate ◽  
Enhancement Mode ◽  
Gan Hemts

Robustness of 650-V Enhancement-Mode GaN HEMTs Under Various Short-Circuit Conditions

2019 ◽  
Vol 55 (2) ◽  
pp. 1807-1816 ◽  
Author(s):  
He Li ◽  
Xiao Li ◽  
Xiaodan Wang ◽  
Xintong Lyu ◽  
Haiwei Cai ◽  
...  
Keyword(s):  
Short Circuit ◽  
Enhancement Mode ◽  
Gan Hemts

scholarly journals An analytical model for the current voltage characteristics of GaN-capped AlGaN/GaN and AlInN/GaN HEMTs including thermal and self-heating effects

2020 ◽  
Vol 10 (2) ◽  
pp. 1791
Author(s):  
A. Bellakhdar ◽  
A. Telia ◽  
J. L. Coutaz
Keyword(s):  
Analytical Model ◽  
Drain Current ◽  
High Electron Mobility Transistors ◽  
Published Data ◽  
High Electron ◽  
Self Heating ◽  
Heating Effects ◽  
Cap Layer ◽  
Gan Hemts ◽  
Sheet Density

We present an analytical model for the I-V characteristics of AlGaN/GaN and AlInN/GaN high electron mobility transistors (HEMT). Our study focuses on the influence of a GaN capping layer, and of thermal and self-heating effects. Spontaneous and piezoelectric polarizations at Al (Ga,In)N/GaN and GaN/Al(Ga,In)N interfaces have been incorporated in the analysis. Our model permits to fit several published data. Our results indicate that the GaN cap layer reduces the sheet density of the two-dimensional electron gas (2DEG), leading to a decrease of the drain current, and that n+-doped GaN cap layer provides a higher sheet density than undoped one. In n+GaN/AlInN/GaN HEMTs, the sheet carrier concentration is higher than in n+GaN/AlGaN/GaN HEMTs, due to the higher spontaneous polarization charge and conduction band discontinuity at the substrate/barrier layer interface.

scholarly journals The role of SiN/GaN cap interface charge and GaN cap layer to achieve enhancement mode GaN MIS-HEMT operation

2020 ◽  
Vol 115 ◽  
pp. 113965
Author(s):  
K. Ahmeda ◽  
B. Ubochi ◽  
M.H. Alqaysi ◽  
A. Al-Khalidi ◽  
E. Wasige ◽  
...  
Keyword(s):  
Enhancement Mode ◽  
Interface Charge ◽  
Cap Layer

scholarly journals Temperature‐dependent dynamic R DS,ON under different operating conditions in enhancement‐mode GaN HEMTs

2020 ◽  
Vol 13 (3) ◽  
pp. 456-462
Author(s):  
Yuan Li ◽  
Yuanfu Zhao ◽  
Alex Q. Huang ◽  
Liqi Zhang ◽  
Qingyun Huang ◽  
...  
Keyword(s):  
Operating Conditions ◽  
Temperature Dependent ◽  
Enhancement Mode ◽  
Gan Hemts
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