Electrical and Optical Properties of Low Pressure Chemical Vapor Deposited Al-Doped ZnO Transparent Conductive Oxide for Thin Film Solar Cell

2011 ◽  
Vol 158 (4) ◽  
pp. D191 ◽  
Author(s):  
Doyoung Kim ◽  
Hyungjun Kim ◽  
Kyungsoo Jang ◽  
Seungman Park ◽  
Krishnakumar Pillai ◽  
...  
Keyword(s):  
Thin Film ◽  
Optical Properties ◽  
Thin Film Solar Cell ◽  
Chemical Vapor ◽  
Transparent Conductive Oxide ◽  
Electrical And Optical Properties ◽  
Chemical Vapor Deposited ◽  
Conductive Oxide ◽  
Pressure Chemical ◽  
Doped Zno

Electrical and Optical Properties of Al-Doped ZnO Transparent Conductive Oxide Films Prepared via Radio Frequency Magnetron Co-Sputtering System

2020 ◽  
Vol 20 (11) ◽  
pp. 6788-6791
Author(s):  
Yeunho Joung ◽  
Kyumin Lee ◽  
Mungi Park ◽  
Wonseok Choi
Keyword(s):  
Optical Properties ◽  
Radio Frequency ◽  
Structural Characteristics ◽  
Power Level ◽  
Visible Region ◽  
Transparent Conductive Oxide ◽  
Deposition Condition ◽  
Electrical And Optical Properties ◽  
Conductive Oxide ◽  
Doped Zno

In this study, the optical and electrical properties of a transparent conductive oxide (TCO) film synthesized via the radio frequency (RF) magnetron co-sputtering of Al-doped ZnO (AZO) and ZnO targets on a glass substrate were investigated. In the visible region, the resistivity, transmittance, and carrier concentration of the TCO film are influenced by the ratio of Al doping. The samples were prepared using two targets with the same deposition condition, except several different power levels on an AZO target to obtain different Al compositions in the film. The power range was 100–160 W in 20 W steps on the AZO target with a constant 50 W power level on the ZnO target. The electrical and optical characteristics of the film were measured using several apparatuses. The cross-section of the films was measured with via field emission scanning electron microscopy (FESEM) to determine the thickness of the film. The electrical and optical properties of the AZO films were measured via Hall measurement and UV-visible spectroscopy. The structural characteristics of the AZO films were confirmed by Raman spectroscopy.

Surface Modification of High Haze Front Transparent Conductive Oxide for Silicon Thin Film Solar Cell

2012 ◽  
Vol 51 (10S) ◽  
pp. 10NB12 ◽  
Author(s):  
Sun Ho Kim ◽  
Dong Joo You ◽  
Jin Hee Park ◽  
Sung Eun Lee ◽  
Heon-Min Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Surface Modification ◽  
Solar Cell ◽  
Thin Film Solar Cell ◽  
Transparent Conductive Oxide ◽  
Silicon Thin Film ◽  
Conductive Oxide

Enhanced Electrical Properties of AZO/IZO Multilayered Thin Film with Post Laser Annealing Process

2021 ◽  
Vol 21 (3) ◽  
pp. 1971-1977
Author(s):  
Jihye Kang ◽  
Dongsu Park ◽  
Donghun Lee ◽  
Masao Kamiko ◽  
Sung-Jin Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Optical Properties ◽  
Multilayer Structure ◽  
Laser Annealing ◽  
Transparent Conducting Oxide ◽  
Sol Gel ◽  
Electrical And Optical Properties ◽  
Vis Spectroscopy ◽  
Doped Zno

In this research, alternative deposition process of ZnO-based thin films have been studied for transparent conducting oxide (TCO) application. To improve the electrical and optical properties of transparent oxide thin films, alternatively stacked Al-doped ZnO and In-doped ZnO thin films were investigated. Multilayer structure of alternative 6 layers of thin films were prepared in this research. Especially, Aluminum and Indium were chosen as dopant materials. Thin films of Al-doped ZnO (AZO) and In-doped ZnO (IZO) were alternatively deposited by spin coating with sol-gel method. After deposition of multilayered thin films, multi steps of furnace (F), rapid thermal annealing (R) and CO2 laser annealing (L) processes were carried out and investigated thin film properties by dependence of post-annealing sequence and thin film structures. The electrical and optical properties of thin films were investigated by 4-point probe and UV-vis spectroscopy and its shows the greatest sheet resistance value of 0.59 kΩ/sq. from AZO/IZO multilayered structure and upper 85% of transmittance. The structural property and surface morphology were measured by X-Ray Diffraction (XRD) and field emission scanning electron microscopy (FE-SEM). The Al- and In-doped ZnO thin film shows the highest intensity value at (002) peak of AZO/IZO multilayer structure which was performed FRL process.

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