Structural, electrical, and optical properties of transparent conductive oxide ZnO:Al films prepared by dc magnetron reactive sputtering

2001 ◽  
Vol 19 (3) ◽  
pp. 963-970 ◽  
Author(s):  
M. Chen ◽  
Z. L. Pei ◽  
X. Wang ◽  
C. Sun ◽  
L. S. Wen
Keyword(s):  
Optical Properties ◽  
Transparent Conductive Oxide ◽  
Reactive Sputtering ◽  
Electrical And Optical Properties ◽  
Conductive Oxide ◽  
Dc Magnetron Reactive Sputtering

Electrical and Optical Properties of Al-Doped ZnO Transparent Conductive Oxide Films Prepared via Radio Frequency Magnetron Co-Sputtering System

2020 ◽  
Vol 20 (11) ◽  
pp. 6788-6791
Author(s):  
Yeunho Joung ◽  
Kyumin Lee ◽  
Mungi Park ◽  
Wonseok Choi
Keyword(s):  
Optical Properties ◽  
Radio Frequency ◽  
Structural Characteristics ◽  
Power Level ◽  
Visible Region ◽  
Transparent Conductive Oxide ◽  
Deposition Condition ◽  
Electrical And Optical Properties ◽  
Conductive Oxide ◽  
Doped Zno

In this study, the optical and electrical properties of a transparent conductive oxide (TCO) film synthesized via the radio frequency (RF) magnetron co-sputtering of Al-doped ZnO (AZO) and ZnO targets on a glass substrate were investigated. In the visible region, the resistivity, transmittance, and carrier concentration of the TCO film are influenced by the ratio of Al doping. The samples were prepared using two targets with the same deposition condition, except several different power levels on an AZO target to obtain different Al compositions in the film. The power range was 100–160 W in 20 W steps on the AZO target with a constant 50 W power level on the ZnO target. The electrical and optical characteristics of the film were measured using several apparatuses. The cross-section of the films was measured with via field emission scanning electron microscopy (FESEM) to determine the thickness of the film. The electrical and optical properties of the AZO films were measured via Hall measurement and UV-visible spectroscopy. The structural characteristics of the AZO films were confirmed by Raman spectroscopy.

Role of Hydrogen Plasma on the Electrical and Optical Properties of Indium Zinc Transparent Conductive Oxide

2006 ◽  
Vol 514-516 ◽  
pp. 63-67 ◽  
Author(s):  
Leandro Raniero ◽  
Alexandra Gonçalves ◽  
Ana Pimentel ◽  
Shibin Zhang ◽  
Isabel Ferreira ◽  
...  
Keyword(s):  
Optical Properties ◽  
Power Density ◽  
Hydrogen Plasma ◽  
Transparent Conductive Oxide ◽  
Optical Transmittance ◽  
Electrical And Optical Properties ◽  
Hydrogenated Silicon ◽  
Hydrogen Flow ◽  
Layer Deposition ◽  
Conductive Oxide

In this work we studied the influence of the power density of hydrogen plasma on electrical and optical properties (Hall mobility, free carrier concentration, sheet resistance, optical transmittance and a.c. impedance) of indium zinc oxide films, aiming to determine their chemical stability. This is an important factor for the optimization of amorphous/nanocrystalline p-i-n hydrogenated silicon (a/nc-Si:H) solar cells, since they should remain chemically highly stable during the p layer deposition. To perform this work the transparent conductive oxide was exposed to hydrogen plasma at substrate temperature of 473 K, 87 Pa of pressure and 20 sccm of hydrogen flow. The results achieved show that IZO films were reduced for all plasma conditions used, which leads mainly to a decrease on films transmittance. For the lowest power density used in the first minute of plasma exposition the transmittance of the IZO films decreases about 29%.

scholarly journals Reproducibility of Properties of SnOxThin Films Prepared by Reactive Sputtering

1985 ◽  
Vol 11 (4) ◽  
pp. 271-280 ◽  
Author(s):  
Grazyna Beensh-Marchwicka ◽  
Lubomila Krol-Stepniewska
Keyword(s):  
Optical Properties ◽  
Substrate Temperature ◽  
Oxygen Content ◽  
Tin Dioxide ◽  
Reactive Sputtering ◽  
Argon Atmosphere ◽  
Low Energy ◽  
Electrical And Optical Properties

The preparation of tin dioxide films by low energy reactive sputtering of tin and tin-antimony (1-10% wt. Sb) in an oxygen – argon atmosphere is described. The dependences of oxygen content in the range from 0 to 50%, target compositions, substrate temperature of 300 K-573 K on minimum resistivity at satisfactory transmittance and on reproducibility are discussed. The correlation between the electrical and optical properties and the microstructure of the films is shown.

Synergy effects of Al-V-co-doping and oxygen reactive sputtering on electrical and optical properties of ZnO films

2021 ◽  
Vol 60 (3) ◽  
pp. 035503
Author(s):  
Takeru Okada ◽  
Chisato Tateyama ◽  
Kotaro Hoshino ◽  
Tomoyuki Kawashima ◽  
Katsuyoshi Washio
Keyword(s):  
Optical Properties ◽  
Reactive Sputtering ◽  
Zno Films ◽  
Electrical And Optical Properties ◽  
Co Doping ◽  
Synergy Effects
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